Device and method for preparing high-purity nitrogen monoxide from adipic acid production tail gases

A technology for nitrous oxide and adipic acid, which is applied in the fields of nitrous oxide, nitrogen oxides/oxyacids, chemical industry, etc., and can solve problems such as low tower top temperature, increased energy consumption of refrigerators, and high production costs , to achieve the effect of reducing the return flow and reducing the energy consumption of the process

Active Publication Date: 2015-12-02
SHANGHAI JIAO TONG UNIV
View PDF6 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

CN101272844B uses pressure swing adsorption PSA method to separate hydroxylamine synthesis tail gas to obtain purified N 2 O, the lower temperature distillation method has made great progress in energy consumption, but this requires the development and production of special adsorbents, and requires two or more

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Device and method for preparing high-purity nitrogen monoxide from adipic acid production tail gases

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] A device for preparing high-purity nitrous oxide from tail gas produced by adipic acid, its structure is as follows figure 1 As shown, high-purity nitrous oxide is prepared by using the tail gas of the adipic acid production plant (see Table 1 for the composition, the processing capacity is 61.5 kmol / h, and the mass flow rate is 2.25 t / h). The process equipment involved includes compressor COMP, absorption tower T1 , heat exchanger, adsorption device ADSOR, cryogenic distillation tower T3, cryogenic refining tower T4 and connecting pipelines. Among them, the absorption tower T1, the cryogenic rectification tower T3, and the cryogenic rectification tower T4 all have tower top condensers, and the cryogenic rectification tower T3 and the cryogenic rectification tower T4 all have tower bottom reboilers. The cryogenic rectification tower T3 has a total of 20 theoretical towers plate, on the fifth theoretical plate there is an intermediate condenser M-C.

[0032] Table 1. Ta...

Embodiment 2

[0042] Other conditions are the same as in Example 1, N in the exhaust gas 2 The mass concentration of O is less than 0.01%, and the low-temperature rectification tower T3 does not have an intermediate condenser. At this time, the temperature at the top of the cryogenic rectification tower T3 is -149.1°C, and the cooling power of the top condenser is 255kw. Based on the ambient temperature of 25°C, the theoretical power consumption required for refrigeration of the cryogenic rectification tower T3 is 358kw.

Embodiment 3

[0044] A device for preparing high-purity nitrous oxide from tail gas produced by adipic acid, including a compressor, an absorption tower, an adsorption device, a low-temperature rectification tower, and a low-temperature refining tower connected in sequence. The gas from the adsorption device is cooled by a heat exchanger and then enters Low-temperature rectification tower, the exhaust gas at the top of the low-temperature rectification tower recovers the cold energy and sends it to the tail gas treatment system, the liquid stream at the bottom of the tower enters the low-temperature refining tower, and high-purity N 2 O, fill after recovering the cooling capacity.

[0045] Among them, the trays provided in the cryogenic rectification tower are adjusted with the increase or decrease of the reflux ratio. In this embodiment, there are 10 trays in total. An intermediate condenser is arranged at the middle and upper positions of the cryogenic rectification tower, and the absorpti...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a device and method for preparing high-purity nitrogen monoxide from adipic acid production tail gases. The device comprises a compressor, an absorption tower, an adsorption device, a low-temperature rectifying tower and a low-temperature refining tower which are connected in sequence, wherein the low-temperature rectifying tower is provided with an intercondenser; airflow discharged from the adsorption device enters the low-temperature rectifying tower after being cooled through a heat exchanger; purge gases located at the top of the tower and treated by the intercondenser is delivered to a tail gas treatment system after the cold energy is recovered; a liquid flow at the bottom of the tower enters the low-temperature refining tower; high-purity N2O is obtained from the top of the low-temperature refining tower and is filled after cold energy is recovered; a pressurized absorption, pressurized adsorption and low-temperature rectification coupling method is adopted; and the low-temperature rectifying tower is internally provided with an intercooler, so that the process energy consumption is greatly reduced on the premise that the high purity of the product is ensured.

Description

technical field [0001] The invention relates to the field of preparation of high-purity nitrous oxide, in particular to a device and a method for preparing high-purity nitrous oxide from adipic acid production tail gas. Background technique [0002] Nitrous oxide (NitrousOxide), also known as laughing gas, has the chemical formula NO, is stable at room temperature, has a slight anesthetic effect, and can make people laugh. NO is an oxidizing agent, which can be used to prepare doped silicon dioxide films in the chemical vapor deposition (CVD) process. Under certain conditions, N 2 O can replace high-purity NH 3 Used to produce silicon nitride masking films. Semiconductor (IC), LED, TFT-LCD, and photovoltaic solar manufacturing also require high-purity N 2 O. due to N 2 O is the main anesthetic gas, therefore, N 2 The production of O is very large, and ammonium nitrate dry decomposition is widely used without pollution. Other methods include sulfamic acid method and amm...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C01B21/22
CPCY02P20/10
Inventor 阎建民肖文德李学刚罗漫
Owner SHANGHAI JIAO TONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products