Method for preparing titanium/diamond-like nanometer multilayer film on silicon surface

A diamond thin film and nano-multilayer technology, which is applied in the field of silicon surface modification, can solve the problems of low bonding strength of the diamond-like film film base, limited application and promotion, and peeling off, achieving high hardness, reducing surface friction and wear, and low interfacial stress Effect

Inactive Publication Date: 2015-12-09
TAIYUAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the actual application process, the diamond-like carbon film often delaminates, peels off and fails due to the low bonding strength of the film base, which greatly limits its application and promotion.

Method used

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  • Method for preparing titanium/diamond-like nanometer multilayer film on silicon surface
  • Method for preparing titanium/diamond-like nanometer multilayer film on silicon surface
  • Method for preparing titanium/diamond-like nanometer multilayer film on silicon surface

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Experimental program
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Effect test

Embodiment 1

[0046] use figure 1 , figure 2 The shown device prepares a titanium / diamond-like nanometer multilayer film on the surface of a silicon substrate.

[0047] A single crystal silicon substrate with a diameter of 20 mm and a thickness of 0.5 mm is tested, and the operation steps are as follows:

[0048] (1) Silicon substrate surface treatment: put the monocrystalline silicon wafer into acetone solution, ethanol solution and deionized water for 10 minutes, respectively, to remove grease and other pollutants on the surface, and then place the substrate in an oven to dry for use;

[0049] (2) Fix the pretreated silicon substrate on such as figure 1 On the rotating sample stage 6 in the vacuum chamber 1 of the cathodic arc device shown, the high-purity titanium target 4 and the graphite target 7 are respectively installed on the evaporators of the DC cathodic arc 2 and the pulsed cathodic arc 3;

[0050] (3) Vacuumize the vacuum chamber 1 with a vacuum pumping device 11 to make ...

Embodiment 2

[0055] use figure 1 , figure 2 The shown device prepares a titanium / diamond-like nanometer multilayer film on the surface of a silicon substrate.

[0056] A single crystal silicon substrate with a diameter of 20 mm and a thickness of 0.5 mm is tested, and the operation steps are as follows:

[0057] (1) Silicon substrate surface treatment: put the monocrystalline silicon wafer into acetone solution, ethanol solution and deionized water for 10 minutes, respectively, to remove grease and other pollutants on the surface, and then place the substrate in an oven to dry for use;

[0058] (2) Fix the pretreated silicon substrate on such as figure 1 On the rotating sample stage 6 in the vacuum chamber 1 of the cathodic arc device shown, the high-purity titanium target 4 and the graphite target 7 are respectively installed on the evaporators of the DC cathodic arc 2 and the pulsed cathodic arc 3;

[0059] (3) Vacuumize the vacuum chamber 1 with a vacuum pumping device 11 to make ...

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Abstract

The invention discloses a method for preparing a titanium/diamond-like nanometer multilayer film on a silicon surface. The method concretely comprises the following steps of: drying a monocrystalline silicon substrate subjected to chemical cleaning in advance; putting the dried monocrystalline silicon substrate onto a rotating sample table of a cathode arcing device; performing vacuum pumping; introducing argon gas into a vacuum chamber; performing sputtering cleaning on the surface of the silicon substrate through an ion source; using high-purity metal titanium and graphite as targets, and using a direct current and pulse double-excitation-source cathode plasma discharge technology for respectively preparing a titanium nanometer function layer and a diamond-like film; and performing later-stage vacuum annealing treatment according to needs. The method has the advantages that the preparing process is simple; and the method can be used for preparing the diamond-like nanometer multilayer composite film with different surface structures. The titanium/diamond-like nanometer multilayer film prepared by the method provided by the invention has the advantages of high hardness, low stress and friction-reduction and abrasion-resistant performance.

Description

technical field [0001] The invention relates to a method for preparing a titanium / diamond-like nanometer multilayer film on a silicon surface, and belongs to the technical field of silicon surface modification. Background technique [0002] Problems such as low efficiency, low life, resource and energy waste caused by friction and wear of mechanical parts and device surfaces are often seen in industrial production and applications, such as engine parts, cutting tools, etc. Surface coating treatment of base materials is one of the effective measures to reduce or eliminate friction and wear. Diamond-like carbon film has excellent properties such as high hardness, high wear resistance, low friction coefficient, chemical inertness, good biocompatibility, etc. layer. Introducing a diamond-like carbon film with high hardness and low friction coefficient on the surface of engine components (cylinders, tappets, pistons, etc.) can reduce the fuel consumption caused by wear by about...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/46
Inventor 周兵刘竹波
Owner TAIYUAN UNIV OF TECH
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