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LED epitaxial structure and manufacturing method thereof

A technology of epitaxial structure and manufacturing method, which can be used in electrical components, circuits, semiconductor devices, etc., and can solve problems such as low VF.

Active Publication Date: 2016-03-23
XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The usual way is to thicken the low-temperature layer, which has the effect of amplifying the "V"-shaped defects (v-pits), but it will bring many other electrical problems, such as parasitic capacitance, ESD, low VF, etc., so it is necessary to develop A structure and a manufacturing method for improving the stress-releasing ability of the stress-releasing layer without excessively thickening the stress-releasing layer

Method used

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  • LED epitaxial structure and manufacturing method thereof
  • LED epitaxial structure and manufacturing method thereof
  • LED epitaxial structure and manufacturing method thereof

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Embodiment 1

[0041] Please refer to figure 1 , the present embodiment provides an LED epitaxial structure, including from bottom to top: a substrate 11, a buffer layer 12, a first conductivity type semiconductor layer including a U-GaN layer 13 and an N-GaN layer 14, and a low Al Component Al x Ga 1-x The stress release layer 15 of the N layer 151 (0.1%≤x≤1%), the quantum well layer 16, and the second conductivity type semiconductor layer including the electron blocking layer 17, the P-GaN layer 18 and the contact layer 19, wherein the stress release layer A GaN layer or an InGaN / GaN superlattice layer can be selected, and the GaN layer is preferred in this embodiment.

[0042] Specifically, the substrate 11 of this embodiment is selected from sapphire (Al 2 o 3 ), at least one of SiC, GaAs, GaN, ZnO, Si, GaP, InP and Ge, preferably a flat sapphire substrate, although not shown in the figure, the sapphire substrate can also be a patterned sapphire substrate ( PSS), therefore, embodime...

Embodiment 2

[0049] Please refer to figure 1 , the present embodiment provides a method for manufacturing an LED epitaxial structure, including the following process steps:

[0050] (1) Provide a substrate 11, preferably a patterned sapphire substrate (PSS), put it into a metal-organic chemical vapor deposition (MOCVD) device and raise the temperature to 1000-1200°C, and process it in a hydrogen atmosphere for 3-10 minutes.

[0051] (2) Cool down to 500~600°C, feed ammonia gas and trimethylgallium, epitaxially grow a low-temperature buffer layer 12 of 20~50nm on the substrate 11, preferably InAlGaN semiconductor material, to play the role of stress release, and then shut down Sanjia Potassium Gallium; the epitaxial growth method can also choose CVD (Chemical Vapor Deposition) method, PECVD (Plasma Enhanced Chemical Vapor Deposition) method, MBE (Molecular Beam Epitaxy) method, HVPE (Hydride Vapor Phase Epitaxy) method, preferably MOCVD, But the embodiment is not limited thereto.

[0052]...

Embodiment 3

[0057] Please refer to figure 2 , the difference from Embodiment 1 is that the stress release layer 25 of this embodiment is an InGaN / GaN superlattice layer with 10 to 30 cycles, the thickness of InGaN in each cycle ranges from 1 to 3 nm, and the thickness of GaN ranges from 2 nm to 2 nm. ~8nm, the overall thickness is controlled between 50~400nm; the AlGaN insertion layer with low aluminum composition can be inserted between any period of the InGaN / GaN superlattice layer, and can also be inserted into each period of the InGaN / GaN superlattice Inside the layer; the number of AlGaN insertion layers can be single or N (N is a natural number of 2≤N≤30). In this embodiment, a single AlGaN layer 251 is preferably inserted between any period of the InGaN / GaN superlattice layer.

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Abstract

The invention provides an LED epitaxial structure and a manufacturing method thereof. The LED epitaxial structure comprises a substrate, a first conductive-type semiconductor layer, a stress release layer, a quantum well layer and a second conductive-type semiconductor layer sequentially from bottom to top. A low-temperature low-Al component AlxGa1-xN layer is inserted in the stress release layer, wherein x has a value range of 0.1% to 1%. Or the stress release layer is a superlattice layer formed by InGaN, GaN, and AlGaN. Thus, the stress release ability of the stress release layer is improved, voltage and Droop effects are improved, and the brightness is enhanced.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic devices, in particular to an LED epitaxial structure and a manufacturing method. Background technique [0002] A light-emitting diode (Light Emitting Diode, referred to as LED in English) is a semiconductor solid-state light-emitting device, which uses a semiconductor PN junction as a light-emitting material, and can directly convert electricity into light. The typical structure of current commercial LED generally includes buffer layer, non-doped GaN, N-type GaN, low-temperature GaN or low-temperature InGaN / GaN superlattice, quantum well, P-type AlGa Nitrogen, P-type GaN, and highly doped P-type GaN; low-temperature GaN or low-temperature InGaN / GaN superlattice (SLs) are generally used as stress release layers, and by opening some "V ” type defects to achieve stress relief. The stress release layer is crucial to the overall performance of the LED, and will affect the voltage, brightne...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/12H01L33/06H01L33/32H01L33/00
CPCH01L33/0075H01L33/06H01L33/12H01L33/32
Inventor 杜成孝郑建森张洁徐宸科
Owner XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
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