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Method for preparing low-melting-point quarternary BZBS (BaO-ZnO-B2O3-SiO2) glass by virtue of sol-gel method

A low melting point, gel method technology, used in the electronics industry, can solve the problems of high raw material cost, easy shrinkage and deformation, and long process time.

Inactive Publication Date: 2016-03-30
SINOTENG SILICA MATERIALS TECH (JIANGSU) CO LTD
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  • Abstract
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Problems solved by technology

However, it also has its own disadvantages such as high cost of raw materials, long process time, easy shrinkage and deformation, and residual carbon.

Method used

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  • Method for preparing low-melting-point quarternary BZBS (BaO-ZnO-B2O3-SiO2) glass by virtue of sol-gel method
  • Method for preparing low-melting-point quarternary BZBS (BaO-ZnO-B2O3-SiO2) glass by virtue of sol-gel method
  • Method for preparing low-melting-point quarternary BZBS (BaO-ZnO-B2O3-SiO2) glass by virtue of sol-gel method

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Embodiment Construction

[0043] A method for preparing low melting point quaternary BZBS glass by a sol-gel method, comprising the steps:

[0044] 1) Preparation of ethyl orthosilicate prehydrolyzate

[0045] Take acetic acid, ethanol, ethyl orthosilicate and water, and mix under stirring for 30-40 minutes to obtain a clear prehydrolyzed solution of ethyl orthosilicate;

[0046] 2) Preparation of sol

[0047] Take zinc acetate, barium acetate, and boric acid and place them in beakers respectively, add distilled water to the beakers where the zinc acetate and barium acetate are located, and stir respectively until the zinc acetate and barium acetate are completely dissolved to obtain clear zinc acetate solution and barium acetate solution. Add water or alcohol to the beaker where the boric acid is located to form a boric acid solution, then mix the boric acid solution, zinc acetate solution, barium acetate solution and the tetraethyl orthosilicate prehydrolyzate obtained in step 1), adjust the pH valu...

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Abstract

The invention provides a method for preparing low-melting-point quarternary BZBS (BaO-ZnO-B2O3-SiO2) glass by virtue of a sol-gel method. The method comprises the following steps: 1) preparing ethyl orthosilicate pre-hydrolysate; 2) preparing sol; 3) preparing xerogel; 4) firing glass; and 5) grinding and screening the obtained xerogel to obtain xerogel powder, pretreating the xerogel powder in a muffle furnace, then carrying out firing at a temperature of 950-1050 DEG C for 0.5-1.5 hours, and then rapidly cooling to the room temperature on a steel plate to obtain low-melting-point quarternary borate glass. The method is reasonable in process condition, a gel structure of the glass is a network structure formed by SiO2 and B2O3 together, and the glass is microcrystalline glass, is good in wetting property, good in clarification effect, strong in crystallizing capability and best in comprehensive performance.

Description

technical field [0001] The invention belongs to the field of electronics industry, and in particular relates to a method for preparing quaternary BZBS glass with a low melting point by a sol-gel method. Background technique [0002] Thick film electronic paste is a high-tech product integrating electronics, chemical industry and metallurgy, and is one of the main basic materials in the electronics industry. It is also the basic material for making electronic components. It can be used for component packaging, electrodes and interconnection. It has the characteristics of wide application range, good product quality, high economic benefits and advanced technology. It occupies an important position in information and electronics and is also widely used. It is widely used in sensor, medical equipment, communication equipment, automobile industry, measurement and control system, high temperature integrated circuit, aerospace, electronic computer, civil electronic products and man...

Claims

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Application Information

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IPC IPC(8): C03B8/02C03C3/066
Inventor 何洪傅仁利何书辉齐国超
Owner SINOTENG SILICA MATERIALS TECH (JIANGSU) CO LTD
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