Thermistor chip and preparation method thereof

A thermistor chip and crystal technology, applied in resistors, non-adjustable metal resistors, resistors with negative temperature coefficient, etc., can solve the problems of long production cycle, high energy consumption, low production efficiency, etc. The effect of energy consumption, high resistance precision, and improved production efficiency

Active Publication Date: 2016-05-11
SHENZHEN GUDIAN ELECTRONICS
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to overcome the technical problems of long production cycle, low production efficiency and high energy consumption in the prior art, the present invention provides a thermistor chip with good sensitivity, low energy consumption and short production cycle and its preparation method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] 1) Weigh 775g manganese nitrate, 418.5g cobalt nitrate, 232.5g nickel nitrate and 124g aluminum nitrate according to the ratio of 50%, 27%, 15% and 8%, and fully dissolve the above substances in 1L according to the mass ratio of 1:0.65 In deionized water, stir evenly to prepare a mixed solution;

[0029] 2) The mixed solution is introduced into a pyrolysis tower, and pyrolyzed at 900°C to obtain 1460g of submicron spinel structure powder;

[0030] 3) According to the mass ratio of 1:0.6:0.55:0.01:0.03, mix the powder with 876g solvent, 803g binder, 14.6g dispersant and 43.8g plasticizer to prepare slurry, and put the slurry into Grind fully in a ball mill for 24 hours, wherein the mass ratio of n-propyl acetate to isobutanol in the solvent is 3:1, the binder is acrylic resin, the dispersant is polyethylene glycol octylphenyl ether, and the plasticizer is dibutyl phthalate;

[0031] 4) The slurry is repeatedly formed into a film on the casting machine to form a block, ...

Embodiment 2

[0034] 1) Weigh 966g manganese nitrate, 322g cobalt nitrate, 161g nickel nitrate and 161g aluminum nitrate according to the ratio of 60%, 20%, 10% and 10%, and fully dissolve the above substances in 1L deionized water, stir evenly, and prepare a mixed solution;

[0035] 2) The mixed solution is introduced into a thermal decomposition tower, and pyrolyzed at 820° C. to obtain 1481 g of submicron spinel structure powder;

[0036] 3) According to the mass ratio of 1:0.57:0.61:0.015:0.025, mix the powder with 844g solvent, 903.5g binder, 22.2g dispersant and 37g plasticizer to prepare slurry, and put the slurry into Grind fully in a ball mill for 24 hours, wherein the mass ratio of n-propyl acetate to isobutanol in the solvent is 3:1, the binder is acrylic resin, the dispersant is polyethylene glycol octylphenyl ether, and the plasticizer is dibutyl phthalate;

[0037] 4) The slurry is repeatedly formed into a film on the casting machine to form a block, and the thickness of the f...

Embodiment 3

[0040] 1) Weigh 684g manganese nitrate, 598.5g cobalt nitrate, 342g nickel nitrate and 85.5g aluminum nitrate according to the ratio of 40%, 35%, 20% and 5%, and fully dissolve the above substances in 1L according to the mass ratio of 1:0.59 In deionized water, stir evenly to prepare a mixed solution;

[0041] 2) The mixed solution is introduced into a thermal decomposition tower, and pyrolysis is carried out at 750° C. to obtain 1625 g of submicron spinel structure powder;

[0042] 3) According to the mass ratio of 1:0.4:0.5:0.005:0.01, mix the powder with 650g solvent, 812.5g binder, 8.1g dispersant and 16.3g plasticizer to prepare slurry, and put the slurry Put into ball mill and fully grind for 24 hours, wherein, the mass ratio of n-propyl acetate and isobutanol in the solvent is 3:1, binder is acrylic resin, dispersant is polyethylene glycol octylphenyl ether, plasticizer The agent is dibutyl phthalate;

[0043] 4) The slurry is repeatedly formed into a film on the cast...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a thermistor chip and a preparation method of the thermistor chip. The thermistor chip is prepared from the following raw materials in percentage by mass: 40 to 60 percent of manganese nitrate, 20 to 35 percent of cobalt nitrate, 10 to 20 percent of nickel nitrate and 5 to 10 parts of aluminum nitrate, wherein the raw materials are all chemical pure crystals. The preparation method comprises the following steps of dissolving the crystals into deionized water to prepare a mixed solution; carrying out thermal decomposition on the mixed solution to obtain mixed powder; mixing the mixed powder with a solvent, a binding agent, a dispersing agent and a plasticizing agent to prepare slurry; carrying out wet film casting on the slurry to obtain a block; carrying out the technologies of drying, cutting, adhesive discharging, sintering, polishing-grinding, silver coating and scribing on the block, thus obtaining the thermistor chip. The electrical resistivity of the thermistor chip provided by the invention is 20 Kohm.mm to 30 Kohm.mm, and a material B value is 4100 K to 4700 K; the preparation method of the thermistor chip is simple, a process of settling and standing or gelating is not needed, and the thermistor chip has the characteristics of high sensitivity, less energy consumption and short production period.

Description

technical field [0001] The invention relates to the technical field of thermistor production, in particular to a thermistor chip and a preparation method thereof. Background technique [0002] A thermistor is a resistor whose resistance value changes as the temperature rises. The temperature coefficient of resistance is usually used to represent the relative change rate of the resistance value when the temperature changes by 1 degree. Due to the difference in manufacturing method and sintering temperature, each thermistor has one and only one material constant B value, and the B value is positively correlated with the temperature coefficient of resistance, that is, the larger the B value, the larger the temperature coefficient of resistance, and the resistance value is affected by The greater the effect of temperature changes, the better the sensitivity of the thermistor itself. Thermistors are widely used in power telecommunications, household appliances, automobiles, and ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01C7/04
CPCH01C7/041
Inventor 梁晓斌潘锴
Owner SHENZHEN GUDIAN ELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products