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High quality perovskite thin film, solar cell and preparation method thereof

A technology for preparing solar cells and thin films, applied in the field of solar cells, can solve problems such as disadvantageous preparation of large-area thin films, increased process manufacturing costs, incomplete conversion of raw materials, etc., and achieves high uniformity, fewer defects, operability and reliability Strong control effect

Active Publication Date: 2016-06-22
INST OF CHEM CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The one-step method is currently the most widely used preparation method, and the highest efficiency of the battery prepared by the one-step method is up to 20.1%, but the traditional one-step method has poor controllability, which is not conducive to the preparation of large-area thin films
In 2013, Gratzel et al. introduced the two-step method to the preparation of perovskite solar cells for the first time. Compared with the one-step method, the two-step method can better control the surface morphology of the film, but due to the existence of raw material conversion complete problem, which will affect the performance of the device
Snaith et al. used a dual-source co-evaporation method (that is, a dual-source steam method) to prepare a perovskite film, and obtained a new type of planar heterojunction perovskite solar cell. Compared with the film prepared by the solution method , the surface of the perovskite film prepared by the steam method is more uniform, but at the same time it also increases the manufacturing cost

Method used

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  • High quality perovskite thin film, solar cell and preparation method thereof
  • High quality perovskite thin film, solar cell and preparation method thereof
  • High quality perovskite thin film, solar cell and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] Embodiment 1: Use the method of the present invention to prepare high-quality perovskite film

[0054] Choose PbI 2 And iodomethylamine is the precursor raw material of perovskite-type materials, which is dissolved in the mixed solvent of DMSO and DMF with a volume ratio of 1:1 according to the molar ratio of 1mmol:1mmol, and is configured to obtain a 45wt% precursor solution. The solution was spin-coated on the substrate at a spin-coating speed of 5000 rpm to obtain a yellow transparent film.

[0055] The film was soaked in chlorobenzene solvent, and after 120s, it was taken out and dried.

[0056] Then, placed in a mixed solvent vapor of deionized water and DMF with a volume ratio of 2%, and steam-assisted baking at 110° C. for 20 minutes to obtain the high-quality perovskite layer film of the present invention.

[0057] figure 1 A schematic diagram of a simple process flow for preparing high-quality perovskite films using the method of the present invention.

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Embodiment 2

[0061] Embodiment 2: Preparation and performance testing of solar cell devices using high-quality perovskite thin films prepared by the method of the present invention

[0062] Using spray pyrolysis technology, the volume ratio of spray pyrolysis is 1:1 on the clean commercial transparent conductive substrate FTO (the thickness of the coating is about 250nm-300nm, the square resistance of the substrate is about 14Ω / □, and the light transmittance is 90%). Mixed precursor solution of titanium isopropoxybisacetylacetonate and ethanol. Then sintered at 500°C for 60 minutes to form TiO 2 dense layer.

[0063] According to the method described in Example 1, a high-quality perovskite film was prepared on the above substrate as a light-absorbing layer.

[0064] A hole transport layer Spiro-OMeTAD was prepared on the perovskite thin film (light absorbing layer) by spin coating.

[0065] A gold layer with a thickness of 80 nm was prepared as the top electrode of the device by vacuum ...

Embodiment 3

[0068] The perovskite film and device were prepared according to the same method as in Examples 1 and 2, except that the mixed solvent vapor of deionized water and DMF was used at a volume ratio of 4%. Tests show that its photoelectric conversion efficiency is 15.70%.

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Abstract

The invention discloses a high quality perovskite thin film, a solar cell and a preparation method thereof. The method uses solvent soaking to assist crystallization, and uses a mixed steam of water and organic solvents to assist baking so as to prepare the high quality organic and inorganic composite perovskite thin film. The high quality perovskite thin film prepared by the method is good in crystallinity, and uniform, smooth and with no defects and holes in a wide range. The preparation method provided by the invention is simple in operation, strong in operability and controllability, and very suitable for preparation of large area perovskite thin film solar cell, therefore, the preparation method has a great potential application value in the field of solar cell or other scientific fields.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a high-quality organic-inorganic composite perovskite film, a thin-film solar cell using it as a light-absorbing layer and a preparation method thereof. Background technique [0002] At present, in the face of increasingly serious environmental pollution and energy crisis, solar energy, as a renewable clean energy, has attracted widespread attention around the world. Solar cells based on the photovoltaic effect are effective units for converting solar energy into electrical energy. In recent years, a perovskite material based on organic-inorganic hybridization has been applied to the field of solar cells due to its strong light absorption ability and carrier transport ability. Since 2009, Miyasaka et al. found that lead halide intercalated with methylamine can be used as a light-absorbing material for dye-sensitized solar cells, and obtained a photoelectric conve...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/48
CPCH10K71/00H10K30/00Y02E10/549
Inventor 胡劲松葛倩庆丁捷刘杰
Owner INST OF CHEM CHINESE ACAD OF SCI
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