Etching solution and etching concentrate for multilayer film and etching method

A technology of multilayer film and etching solution, which is applied in the field of etching solution for multilayer film, can solve the problems of etching equipment pipe blockage, cost increase, disconnection, etc., and achieve the effect of light environmental burden

Active Publication Date: 2017-12-19
PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] The third item is the life of the etching solution itself
When deposits are generated due to etching, the piping of the etching device may be clogged, or the hole of the shower head that sprays the etching solution may be clogged.
These phenomena cause the stoppage of the etching equipment and are related to the increase in cost
In addition, when the precipitates adhere to the product through the etchant, they cause short circuits and disconnections, which directly affect the quality of the products.

Method used

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  • Etching solution and etching concentrate for multilayer film and etching method
  • Etching solution and etching concentrate for multilayer film and etching method
  • Etching solution and etching concentrate for multilayer film and etching method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0103] 0.06% by mass of sulfuric acid, 2.50% by mass of glycolic acid, 0.44% by mass of aspartic acid, 0.87% by mass of glutamic acid, 0.66% by mass of β-alanine, 1.61% by mass of 1-amino-2-propanol, benzene Etching solution raw materials formed by 0.11 mass % of urea and 0.88 mass % of ethylenediaminetetraacetic acid (hereinafter, also referred to as "EDTA") and 92.87 mass % of water were mixed to prepare an etching concentrate.

[0104] 35% hydrogen peroxide and the etching concentrate were mixed to prepare an etching solution having a hydrogen peroxide concentration of 5.30% by mass. Furthermore, copper sulfate was added, and it prepared so that the copper ion concentration might be 2000 ppm. In addition, it was used at a liquid temperature of 30°C. Table 1 shows the concentration of each component in the whole etching solution and the results of each evaluation item.

Embodiment 2

[0106] 0.07% by mass of sulfuric acid, 2.50% by mass of glycolic acid, 0.45% by mass of aspartic acid, 0.88% by mass of glutamic acid, 0.66% by mass of β-alanine, 1.61% by mass of 1-amino-2-propanol, benzene 0.11% by mass of urea, 0.88% by mass of ethylenediaminetetraacetic acid, and 0.33% by mass of polyethylene glycol (hereinafter also referred to as "PEG"). The raw material of the etching solution was mixed with 92.51% by mass of water to prepare an etching concentrate .

[0107] 35% hydrogen peroxide and the etching concentrate were mixed to prepare an etching solution having a hydrogen peroxide concentration of 5.30% by mass. Furthermore, copper sulfate was added, and it prepared so that the copper ion concentration might be 2000 ppm. In addition, it was used at a liquid temperature of 30°C. Table 1 shows the concentration of each component in the whole etching solution and the results of each evaluation item.

Embodiment 3

[0109] 0.19% by mass of nitric acid, 2.05% by mass of glycolic acid, 0.44% by mass of aspartic acid, 0.90% by mass of glutamic acid, 0.66% by mass of β-alanine, 1.94% by mass of 1-amino-2-propanol, benzene An etching liquid raw material comprising 0.11% by mass of urea and 0.87% by mass of ethylenediaminetetraacetic acid and 92.84% by mass of water were mixed to prepare an etching concentrate.

[0110] 35% hydrogen peroxide and the etching concentrate were mixed to prepare an etching solution having a hydrogen peroxide concentration of 5.30% by mass. Furthermore, copper sulfate was added, and it prepared so that the copper ion concentration might be 2000 ppm. In addition, it was used at a liquid temperature of 30°C. Table 1 shows the concentration of each component in the whole etching solution and the results of each evaluation item.

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Abstract

　When an etchant that alone can etch a multilayer film comprising a copper layer and a molybdenum layer is used during mass production, it is important for the cross-sectional shape of an edge after etching to satisfy the shape requirement of having a forward taper without an undercut, and that no precipitate be formed in the etchant. A multilayer-film etchant containing a copper layer and a molybdenum layer contains hydrogen peroxide, an inorganic acid, an acidic organic acid, a neutral organic acid, an amine compound, and a hydrogen peroxide decomposition inhibitor, but not an azole compound; therefore, no reaction products are generated from a reaction with the hydrogen peroxide, and no precipitates form in the etchant. Furthermore, the cross-sectional shape of the edge after etching can be formed into a desirable forward tapering shape. Containing no phosphorus compounds or fluorine compounds, the etchant will case minimal damage to the environment when disposed.

Description

technical field [0001] The present invention relates to an etching liquid, an etching concentrate, and an etching method for a multilayer film used when etching a multilayer film of a copper layer and a molybdenum layer used in wiring applications of flat panel displays such as liquid crystal and organic EL. Background technique [0002] Aluminum is used as a wiring material for a TFT (Thin film transistor, Thin film transistor) of a flat panel display (FPD) such as a liquid crystal or an organic EL (Electro-luminescence, Electro-Luminescence). In recent years, large-screen and high-definition FPDs have spread, and the wiring material used is required to be a material with a lower resistance than aluminum. Therefore, in recent years, copper having lower electrical resistance than aluminum has been used as a wiring material. [0003] When copper is used as a wiring material, there are two problems of adhesion to the substrate and diffusion into the semiconductor base materia...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23F1/18C23F1/26
CPCC23F1/18
Inventor 着能真小佐野善秀渊上真一郎
Owner PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
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