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Silicon wafer cleaning agent and method for preparing same

A cleaning agent, silicon wafer technology, applied in the field of cleaning agents, can solve the problems of reducing solar energy conversion efficiency, strong acid or strong alkali can not achieve good cleaning effect, affecting work performance, etc., to achieve improved cleaning effect, good biodegradability, The effect of promoting emulsifying properties

Inactive Publication Date: 2016-08-31
安庆友仁电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the process of processing, some organic substances are often attached to the surface of the silicon wafer as metal impurities to affect its working performance and reduce the conversion efficiency of solar energy, so the surface of the silicon wafer must be kept clean
Traditional cleaning agents for silicon wafers use strong corrosive chemical reagents such as strong acids or strong alkalis. A single strong acid or strong alkali cannot achieve a good cleaning effect. Therefore, it is urgent to develop a silicon wafer cleaning agent with excellent cleaning effects. agent to satisfy

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] A kind of silicon wafer cleaning agent that the present invention proposes, its raw material comprises by weight: 6 parts of sodium hydroxide, 5 parts of anhydrous sodium carbonate, 6 parts of sodium metasilicate, 6.5 parts of disodium edetate, succinic acid 4 parts of dioctyl sodium sulfonate, 3.5 parts of OP-10, 6.5 parts of sodium dodecylbenzene sulfonate, 6 parts of perfluorohexyl acetate surfactant, 10-sodium trifluoromethoxydecane sulfonate 4.5 parts, 2.5 parts of perfluorohexyl ethyl methyl dihydroxyethyl ammonium iodide, 6.5 parts of Tween 80, 4.5 parts of polyethylene glycol, 2 parts of triethanolamine, 3.5 parts of n-butanol, 2.5 parts of isopropanol, 15 parts of deionized water.

[0021] A kind of preparation method of silicon wafer cleaning agent of the present invention, comprises the steps:

[0022] S1. Preparation of alkaline solution: dissolving sodium hydroxide in deionized water to obtain a sodium hydroxide solution, then adding anhydrous sodium carbo...

Embodiment 2

[0028] A kind of silicon wafer cleaning agent that the present invention proposes, its raw material comprises by weight: 3 parts of sodium hydroxide, 8 parts of anhydrous sodium carbonate, 3 parts of sodium metasilicate, 8 parts of disodium edetate, succinic acid 2 parts of sodium dioctyl sulfonate, 5 parts of OP-10, 4 parts of sodium dodecylbenzene sulfonate, 9 parts of perfluorohexyl acetate surfactant, sodium 10-trifluoromethoxydecane sulfonate 2 parts, 4 parts of perfluorohexyl ethyl methyl dihydroxyethyl ammonium iodide, 4 parts of Tween 80, 6 parts of polyethylene glycol, 1 part of triethanolamine, 5 parts of n-butanol, 1 part of isopropanol, 20 parts of deionized water.

[0029] A kind of preparation method of silicon wafer cleaning agent of the present invention, comprises the steps:

[0030] S1. Preparation of alkaline solution: dissolving sodium hydroxide in deionized water to obtain a sodium hydroxide solution, then adding anhydrous sodium carbonate and sodium meta...

Embodiment 3

[0036] A kind of silicon wafer cleaning agent that the present invention proposes, its raw material comprises by weight: 9 parts of sodium hydroxide, 2 parts of anhydrous sodium carbonate, 9 parts of sodium metasilicate, 5 parts of disodium edetate, succinic acid Dioctyl sodium sulfonate 6 parts, OP-10 2 parts, sodium dodecylbenzene sulfonate 9 parts, perfluorohexyl acetate surfactant 3 parts, sodium 10-trifluoromethoxydecane sulfonate 7 parts, 1 part of perfluorohexyl ethyl methyl dihydroxyethyl ammonium iodide, 9 parts of Tween 80, 3 parts of polyethylene glycol, 3 parts of triethanolamine, 2 parts of n-butanol, 4 parts of isopropanol, 10 parts of deionized water.

[0037] A kind of preparation method of silicon wafer cleaning agent of the present invention, comprises the steps:

[0038] S1. Preparation of alkaline solution: dissolving sodium hydroxide in deionized water to obtain a sodium hydroxide solution, then adding anhydrous sodium carbonate and sodium metasilicate to...

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PUM

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Abstract

The invention discloses a silicon wafer cleaning agent. The silicon wafer cleaning agent comprises, by weight, 3-9 parts of sodium hydroxide, 2-8 parts of anhydrous sodium carbonate, 3-9 parts of sodium metasilicate, 5-8 parts of ethylene diamine tetraacetic acid, 2-6 parts of sodium diethylhexyl sulfosuccinate, 2-5 parts of OP-10, 4-9 parts of sodium dodecyl benzene sulfonate, 3-9 parts of total-fluorine hexylacetic acid salt surfactants, 2-7 parts of 10-trifluoromethoxy sodium 1-decanesulfonate, 1-4 parts of total-fluorine hexyl ethyl methyl dihydroxy ethyl ammonium iodide, 4-9 parts of Tween-80, 3-6 parts of polyethylene glycol, 1-3 parts of triethanolamine, 2-5 parts of butanol, 1-4 parts of isopropyl alcohol and 10-20 parts of deionized water. The invention further provides a method for preparing the silicon wafer cleaning agent. The silicon wafer cleaning agent and the method have the advantage of excellent cleaning effects.

Description

technical field [0001] The invention relates to a cleaning agent, in particular to a silicon wafer cleaning agent and a preparation method thereof. Background technique [0002] Silicon wafer has good photoelectric effect and is the main material of solar cells. However, in the process of processing, some organic matter often adheres to the surface of the silicon wafer as metal impurities, affecting its working performance and reducing the conversion efficiency of solar energy, so the surface of the silicon wafer must be kept clean. Traditional cleaning agents for silicon wafers use strong corrosive chemical reagents such as strong acids or strong alkalis. A single strong acid or strong alkali cannot achieve a good cleaning effect. Therefore, it is urgent to develop a silicon wafer cleaning agent with excellent cleaning effects. agent to satisfy. Contents of the invention [0003] In order to solve the technical problems existing in the background technology, the present...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C11D1/86C11D3/60C11D3/10C11D3/04C11D3/08C11D3/33C11D3/37C11D3/30C11D3/20
CPCC11D1/86C11D1/006C11D1/143C11D1/28C11D1/721C11D3/044C11D3/08C11D3/10C11D3/201C11D3/30C11D3/33C11D3/3707
Inventor 项涛项武
Owner 安庆友仁电子有限公司
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