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Anti-irradiation solar energy cell manufacturing method

A solar cell and anti-irradiation technology, which is applied in the field of solar cells, can solve problems such as falling off, reducing the absorption efficiency of the cell, and affecting the photoelectric conversion efficiency of the cell, and achieves the effects of good thermal shock resistance, stable charging performance, and simple preparation process

Active Publication Date: 2016-10-26
江苏万邦微电子有限公司
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Problems solved by technology

However, due to the non-conductivity of the magnesium fluoride film, the solar cell has the problem of uneven charging. Therefore, a layer of indium tin oxide (ITO) film with good conductivity and transparency is deposited on the surface of the magnesium fluoride film.
The ITO material also has the problem of absorbing sunlight in the visible light band and matching with the magnesium fluoride material. If the ITO film deposited on the surface of the magnesium fluoride thin film is too thick, the light absorption efficiency of the battery will be reduced, which will affect The photoelectric conversion efficiency of the battery; if the ITO film is too thin, it is easy to fall off on the magnesium fluoride film, which reduces the reliability of the solar cell.

Method used

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  • Anti-irradiation solar energy cell manufacturing method

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Embodiment Construction

[0011] Such as figure 1 Shown, the inventive method comprises the following steps:

[0012] Step 1: Use a P-type single crystal silicon wafer with a resistivity of 6-8Ω.cm, and thermally oxidize the surface to form a SiO with a thickness of 35nm 2 Floor;

[0013] Step 2: On SiO 2 A layer of tungsten masking film is sputtered on the layer;

[0014] Step 3: Form a tungsten masking film pattern by photolithography and etching, so that the line width of the implanted area of ​​the pattern is 2 μm, and the masking interval width is 3 μm;

[0015] Step 4: Perform superposition implantation of phosphorus ions on the tungsten masking film, the number of times is five, and the energy and dose of each implantation are respectively 0.4MeV, 3×10 14 / cm 2 ;0.7MeV, 3×10 13 / cm 2 ; 1.2MeV, 5×10 13 / cm 2 ;3MeV, 8×10 13 / cm 2 ;6 MeV, 1×10 14 / cm 2 ;

[0016] Step 5: Perform low-temperature annealing on the ion-implanted silicon wafer in a protective nitrogen environment at a temp...

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Abstract

The invention discloses an anti-irradiation solar energy cell manufacturing method. The method comprises six steps that a SiO2 layer is formed on a surface of a monocrystalline silicon wafer; a tungsten masking film is sputtered on the SiO2 layer; the tungsten masking film is etched for a tungsten masking film pattern; phosphor ion superposition injection is carried out on the tungsten masking film after etching; low temperature annealing is carried out; high temperature annealing is carried out. The method is advantaged in that the manufacturing process is simple and convenient, high reliability is realized, and solar energy charging is not influenced.

Description

technical field [0001] The invention belongs to the technical field of solar cells, in particular to a preparation method of radiation-resistant solar cells. Background technique [0002] With the increasing tension of world energy and the rapid increase of power consumption due to economic development, solar cells are becoming more and more popular because of their environmental protection, wide application fields, and high safety performance. [0003] However, during the working process of solar cells, the radiation of charged particles is very harmful to solar cells, which will produce a variety of crystal defects, increase the recombination center, reduce the life and diffusion length of photogenerated carriers, and cause the electrical properties of solar cells The deterioration of the solar cell will further reduce the photoelectric conversion efficiency of the cell, which will directly affect the reliability and service life of the solar cell. [0004] At present, th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0352H01L31/18H01L31/0687H01L21/265H01L21/266
CPCH01L21/26506H01L21/266H01L31/03529H01L31/0687H01L31/1804Y02E10/544Y02E10/547Y02P70/50
Inventor 窦延军张林张春秋
Owner 江苏万邦微电子有限公司
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