Unlock instant, AI-driven research and patent intelligence for your innovation.

A kind of conductive nickel paste for perovskite solar cells and preparation method thereof

A solar cell and perovskite technology, which is applied in the direction of cable/conductor manufacturing, semiconductor/solid-state device manufacturing, conductive materials dispersed in non-conductive inorganic materials, etc., can solve the problem of inability to obtain conductive nickel paste, and achieve improvement The effect of battery device efficiency, simple composition, and good electrical conductivity

Inactive Publication Date: 2017-12-08
WUHAN UNIV OF TECH
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, because nickel is easily oxidized to nickel oxide, the existing nickel paste technology cannot obtain a nickel paste that still has good electrical conductivity after sintering at 300-600°C to form a film

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of conductive nickel paste for perovskite solar cells and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Mix 10 grams of nickel powder (average particle size 10 microns) with 1 gram of nano-nickel oxide, add to 10 grams of water and 3.75 grams of ethanol, add 0.25 grams of nickel acetylacetonate, and grind thoroughly to obtain a conductive nickel paste. The conductive nickel paste is used to prepare a thin film by printing technology, and sintered at a temperature of 600°C to obtain a conductive film, which is then assembled into a perovskite solar cell. Its structure is as follows: figure 1 As shown, there are 1-7 layers from bottom to top, wherein 1 is a transparent substrate, 2 is a transparent conductive layer, 3 is a hole blocking layer, 4 is an electron selective layer, 5 is a spacer layer, 6 is an electron selective layer, and 7 is an electron selective layer. for nickel electrodes. Since nickel is easily oxidized to nickel oxide under high temperature conditions, part of the surface of nickel powder will be oxidized to form a nickel / nickel oxide core-shell structur...

Embodiment 2

[0031] Mix 10 grams of nickel powder (average particle size 10 microns) with 2.5 grams of carbon black, add to 8 grams of water and 3.5 grams of acetonitrile, add 1 gram of zirconium oxychloride, and grind thoroughly to obtain a nickel slurry. The nickel paste is used to prepare a thin film by printing technology, and sintered at a temperature of 350°C to obtain a conductive film, which is then assembled into a perovskite solar cell.

[0032] The conductivity test shows that the surface resistance of the conductive film is 0.8Ω / □ when the thickness is 10 μm.

[0033] Cell efficiency: 100mW / cm at intensity 2 The simulated solar photoelectric performance test shows that the solar cell obtains a short-circuit photocurrent density J sc =12mA / cm 2 , open circuit voltage V oc =900mV, fill factor FF=0.63, photoelectric conversion efficiency η=6.8%.

Embodiment 3

[0035]Mix 10 grams of nickel powder (average particle size 10 microns) with 0.816 grams of nano-copper, add to 5 grams of water and 0.83 grams of dimethyl sulfoxide, add 0.017 grams of tetraethyl orthosilicate, and fully grind to obtain nickel paste . The nickel paste is used to prepare a thin film by printing technology, and sintered at a temperature of 300°C to obtain a conductive film.

[0036] The conductive nickel film prepared above has a surface resistance of ≤0.020Ω / □, an adhesion of 4B, and a hardness of >2H when the film thickness is 10 μm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
adhesivityaaaaaaaaaa
Login to View More

Abstract

The invention relates to a conductive nickel paste for a perovskite solar cell and a preparation method thereof. In terms of weight percentage, the raw material composition is as follows: nickel powder 40-60%, nano-additive 4-20%, solvent 35-55%, inorganic Oxide precursor 0.1‑5%. The invention not only has simple components, low cost and high preparation efficiency, but also has a wide range of applications, and is especially suitable for the counter electrode of perovskite solar cells. Because it has a nickel / nickel oxide core-shell structure, its nickel oxide shell is a hole transport material It matches the HOMO energy level of perovskite light-absorbing materials; its core is metallic nickel, which has good electrical conductivity, and is a new type of conductive paste with great development potential and market prospects.

Description

technical field [0001] The invention relates to a conductive nickel paste for a perovskite solar cell and a preparation method thereof. Background technique [0002] With the development of microelectronic technology, various commercial microelectronic devices have penetrated into every aspect of people's daily life. However, most of the microelectronic devices involve the use of noble metal electrodes in the process of their preparation, and adopt various complicated preparation processes including evaporation, sputtering and vapor deposition. These materials and preparation processes are not only costly, but also consume a lot of energy. In the past ten years, people have continuously made breakthroughs in the research of solubilized organic and inorganic semiconductors, which has given birth to a new technology-printed electronics technology that uses traditional printing technology to manufacture various microelectronic devices. This technology adopts the method of pri...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01B1/16H01L51/44H01B13/00
CPCH01B1/16H01B13/00H10K30/81Y02E10/549Y02P70/50
Inventor 库治良彭勇黄福志钟杰程一兵
Owner WUHAN UNIV OF TECH