Perovskite sheet-based light-emitting device and preparation method thereof

A light-emitting device and perovskite technology, which is applied in the manufacture of semiconductor/solid-state devices, electric solid-state devices, semiconductor devices, etc. It is difficult to adjust and other problems to achieve the effect of high carrier mobility, simple process and convenient processing.

Active Publication Date: 2016-12-14
SHAANXI NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the specific band gap and emission wavelength of the material, it is difficult to find a light-emitting device with very good luminous brightness and emission wavelength coupling, and it is difficult to realize a high-performance display device based on a multi-color light-emitting device.
At present, most of the light-emitting devices used in the market are made of GaN material, which has high requirements on the substrate and has a small curve tolerance, and the cost is usually relatively high.
At the same time, the adjustment of this material is not easy to adjust, and it is difficult to realize a full-spectrum light-emitting device

Method used

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  • Perovskite sheet-based light-emitting device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] The preparation of large-area perovskite flakes is as follows.

[0032] 1. Using the method of continuous growth, the fresh CH 3 NH 3 I and PbI 2 The mixed solution was continuously injected into the crystal growth container to maintain the crystal growth solution at a constant concentration to ensure the continuity and uniformity of the crystal growth process, so as to obtain a single crystal CH with a size of 15 mm × 15 mm × 5 mm. 3 NH 3 PB 3 , the luminescence peak of the crystal is detected at 780nm;

[0033] 2. Using the method of mortar cutting, in which the speed of the sand line movement is 3mm / s, the large-size perovskite crystal is cut to obtain an area of ​​200mm 2 , perovskite flakes with a thickness of 100 μm;

[0034] 3. Use ultrasonic cleaning to remove the mortar on the surface of the perovskite sheet;

[0035] 4. Using a mechanical polishing machine, the two sides of the perovskite sheet are polished to remove the damaged layer during cutting and...

Embodiment 2

[0042] The preparation of large-area perovskite flakes is as follows.

[0043] 1. Using the method of continuous growth, the fresh CH 3 NH 3 Br and PbBr 2 The mixed solution is continuously injected into the crystal growth container to maintain the crystal growth solution at a constant concentration to ensure the continuity and uniformity of the crystal growth process to obtain a CH with a size of 50mm×50mm×15mm. 3 NH 3 PbBr 3 Crystal, the luminescence peak of the substance is detected at 538nm;

[0044] 2. Using the sand wire cutting method, in which the speed of the sand wire movement is 3mm / s, the large-size perovskite crystal is cut to obtain an area of ​​500mm 2 , perovskite flakes with a thickness of 500 μm;

[0045] 3. Use ultrasonic cleaning to remove the mortar on the surface of the perovskite sheet;

[0046] 4. Using a mechanical polishing machine, the two sides of the perovskite sheet are polished to remove the damaged layer during cutting and increase the fl...

Embodiment 3

[0053] The preparation of large-area perovskite flakes is as follows.

[0054] 1. Using the method of continuous growth, the fresh CH 3 NH 3 Cl and PbCl 2 The mixed solution is continuously injected into the crystal growth container to maintain the crystal growth solution at a constant concentration to ensure the continuity and uniformity of the crystal growth process, so as to obtain a single crystal CH with a size of 20mm×20mm×10mm 3 NH 3 PbCl 3 , the detected luminescence peak of the substance is located at 402nm;

[0055] 2. Using the method of diamond wire cutting, in which the speed of diamond wire movement is 5mm / s, the large-size perovskite single crystal is cut to obtain an area of ​​400mm 2 , perovskite flakes with a thickness of 400 μm;

[0056] 3. Using a mechanical polishing machine, the two sides of the perovskite sheet are polished to remove the damaged layer during cutting and increase the flatness of the surface of the perovskite sheet to facilitate subs...

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Abstract

The invention provides a perovskite sheet-based light-emitting device and a preparation method thereof. The method is convenient to process and simple in preparation; and the device is assembled by growing band gap-adjustable perovskite sheets. The method comprises the steps of (1) obtaining a monocrystalline or polycrystalline perovskite crystal of a corresponding light-emitting wavelength by controlling the halogen ion doping amount; (2) slicing the obtained perovskite crystal to obtain large-area perovskite sheets of which the area is greater than 200 mm<2> and the thickness is smaller than 1 mm; and (3) taking the large-area perovskite sheets as active layers of the light-emitting device to obtain the light-emitting device. On the basis of preparation of the large-sized color-adjustable monocrystal or polycrystal perovskite crystal, the perovskite sheets are prepared by employing a crystal cutting process; and perfect cutting of the crystal can be achieved by controlling the roughness and the movement speed of a cutting line in the cutting process. By the cutting process of the perovskite crystal, production of a high-quality perovskite wafer is facilitated and preparation of a high-quality perovskite single crystal device is facilitated.

Description

technical field [0001] The invention relates to a color-tunable light-emitting device, in particular to a light-emitting device based on perovskite flakes and a preparation method thereof. Background technique [0002] So far, all display devices based on light-emitting devices have used the combination of short-wavelength light-emitting devices and phosphors to realize multi-color and white light-emitting devices. Due to the aging of the phosphor powder and the coupling problem with the wavelength of the light-emitting device, the color modulation and color rendering of the light-emitting device need to be further improved. Using a light-emitting device with three primary colors, it can realize the modulation of the light-emitting wavelength in the full spectrum range, and can realize a display device with high brightness, high fidelity and color rendering. It is the core unit of the next-generation display device. However, due to the specific band gap and emission wavelen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/56H01L51/50H01L51/54
CPCH10K85/30H10K50/11H10K71/00
Inventor 刘生忠杨周刘渝城任小东孙键焜
Owner SHAANXI NORMAL UNIV
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