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A light-emitting device based on perovskite flakes and its preparation method

A light-emitting device, perovskite technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc. Difficult to light-emitting devices and other problems, to achieve the effect of high carrier mobility, simple process, and high luminous efficiency

Active Publication Date: 2019-05-03
SHAANXI NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the specific band gap and emission wavelength of the material, it is difficult to find a light-emitting device with very good luminous brightness and emission wavelength coupling, and it is difficult to realize a high-performance display device based on a multi-color light-emitting device.
At present, most of the light-emitting devices used in the market are made of GaN material, which has high requirements on the substrate and has a small curve tolerance, and the cost is usually relatively high.
At the same time, the adjustment of this material is not easy to adjust, and it is difficult to realize a full-spectrum light-emitting device

Method used

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  • A light-emitting device based on perovskite flakes and its preparation method
  • A light-emitting device based on perovskite flakes and its preparation method
  • A light-emitting device based on perovskite flakes and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] The preparation of large-area perovskite flakes is as follows.

[0032] 1. Using the method of continuous growth, the fresh CH 3 NH 3 I and PbI 2 The mixed solution was continuously injected into the crystal growth container to maintain the crystal growth solution at a constant concentration to ensure the continuity and uniformity of the crystal growth process, so as to obtain a single crystal CH with a size of 15 mm × 15 mm × 5 mm. 3 NH 3 PB 3 , the luminescence peak of the crystal is detected at 780nm;

[0033] 2. Using the method of mortar cutting, in which the speed of the sand line movement is 3mm / s, the large-size perovskite crystal is cut to obtain an area of ​​200mm 2 , perovskite flakes with a thickness of 100 μm;

[0034] 3. Use ultrasonic cleaning to remove the mortar on the surface of the perovskite sheet;

[0035] 4. Using a mechanical polishing machine, the two sides of the perovskite sheet are polished to remove the damaged layer during cutting and...

Embodiment 2

[0042] The preparation of large-area perovskite flakes is as follows.

[0043] 1. Using the method of continuous growth, the fresh CH 3 NH 3 Br and PbBr 2 The mixed solution is continuously injected into the crystal growth container to maintain the crystal growth solution at a constant concentration to ensure the continuity and uniformity of the crystal growth process to obtain a CH with a size of 50mm×50mm×15mm. 3 NH 3 PbBr 3 Crystal, the luminescence peak of the substance is detected at 538nm;

[0044] 2. Using the sand wire cutting method, in which the speed of the sand wire movement is 3mm / s, the large-size perovskite crystal is cut to obtain an area of ​​500mm 2 , perovskite flakes with a thickness of 500 μm;

[0045] 3. Use ultrasonic cleaning to remove the mortar on the surface of the perovskite sheet;

[0046] 4. Using a mechanical polishing machine, the two sides of the perovskite sheet are polished to remove the damaged layer during cutting and increase the fl...

Embodiment 3

[0053] The preparation of large-area perovskite flakes is as follows.

[0054] 1. Using the method of continuous growth, the fresh CH 3 NH 3 Cl and PbCl 2 The mixed solution is continuously injected into the crystal growth container to maintain the crystal growth solution at a constant concentration to ensure the continuity and uniformity of the crystal growth process, so as to obtain a single crystal CH with a size of 20mm×20mm×10mm 3 NH 3 PbCl 3 , the detected luminescence peak of the substance is located at 402nm;

[0055] 2. Using the method of diamond wire cutting, in which the speed of diamond wire movement is 5mm / s, the large-size perovskite single crystal is cut to obtain an area of ​​400mm 2 , perovskite flakes with a thickness of 400 μm;

[0056] 3. Using a mechanical polishing machine, the two sides of the perovskite sheet are polished to remove the damaged layer during cutting and increase the flatness of the surface of the perovskite sheet to facilitate subs...

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Abstract

The invention is a light-emitting device based on perovskite flakes and a preparation method thereof, which is convenient in processing and simple in preparation, and the device is assembled by growing perovskite flakes with adjustable band gaps. It includes the following steps, step 1, by controlling the doping amount of halogen ions to obtain single crystal or polycrystalline perovskite crystals corresponding to the emission wavelength; step 2, slicing the obtained perovskite crystals to obtain an area greater than 200mm2 and a thickness less than A large-area perovskite sheet of 1 mm; step 3, using the large-area perovskite sheet as an active layer of a light-emitting device to obtain a light-emitting device. On the basis of preparing large-size color-tunable single crystal or polycrystalline perovskite crystals, perovskite flakes are prepared by using crystal cutting technology; by controlling the roughness and moving speed of the cutting line during the cutting process, the perfect crystal can be achieved cutting. The cutting process of perovskite crystals is conducive to the production of high-quality perovskite wafers and the preparation of high-quality perovskite single crystal devices.

Description

technical field [0001] The invention relates to a color-tunable light-emitting device, in particular to a light-emitting device based on perovskite flakes and a preparation method thereof. Background technique [0002] So far, all display devices based on light-emitting devices have used the combination of short-wavelength light-emitting devices and phosphors to realize multi-color and white light-emitting devices. Due to the aging of the phosphor powder and the coupling problem with the wavelength of the light-emitting device, the color modulation and color rendering of the light-emitting device need to be further improved. Using a light-emitting device with three primary colors, it can realize the modulation of the light-emitting wavelength in the full spectrum range, and can realize a display device with high brightness, high fidelity and color rendering. It is the core unit of the next-generation display device. However, due to the specific band gap and emission wavelen...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/56H01L51/50H01L51/54
CPCH10K85/30H10K50/11H10K71/00
Inventor 刘生忠杨周刘渝城任小东孙键焜
Owner SHAANXI NORMAL UNIV