Active layer material and application of active layer material in preparing ternary memory device

A storage device, ternary technology, applied in static memory, digital memory information, information storage and other directions, can solve the problems of poor assembly effect, few types of active layer systems, difficult to achieve, etc., to achieve stable performance, conducive to charge transition, Excellent performance

Active Publication Date: 2017-02-22
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The introduction of molecular self-assembly technology into the preparation of electronic devices is attracting everyone's attention because it can obtain multifunctional films while maintaining the integrity of the film. Most of the molecular self-assembled films are established by electrostatic interaction. This has led to great limitations in the application of layer-by-layer assembly in the preparation of electronic devices, especially the formation of ordered self-assembled films on polymer substrates is difficult to achieve, mainly because the polymer sub...

Method used

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  • Active layer material and application of active layer material in preparing ternary memory device
  • Active layer material and application of active layer material in preparing ternary memory device
  • Active layer material and application of active layer material in preparing ternary memory device

Examples

Experimental program
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Effect test

Synthetic example 1

[0035] Poly 4-(4-methacryloyloxy)-azo)pyridine was synthesized by free radical polymerization: 10 mmol (267 mg) of 4-(4-methacryloyloxy)-azo ) pyridine, initiator AIBN (1 mmol, 1.64mg) and 2.5mL of freshly distilled cyclohexanone, under the protection of argon, react at 90°C for 18 hours. After the reaction, the reaction solution was poured into 50ml of methanol to precipitate the product, filtered and dried to obtain poly-4-(4-methacryloyloxy)-azo)pyridine; yield: 57%. IR(KBr): 3423(b), 3033(b), 1751(s), 1589(s), 1494(m), 1195(s), 1101(s), 833(m), 561(w). 1 H NMR (CDCl 3 ): δ=1.0-2.1 (m, 5H), 7.0-7.3 (m, 2H), 7.3-7.7(m, 2H),7.7-8.1 (m, 2H), 8.4-8.9 (m, 2H) (Scheme 5. 1).

Embodiment 1

[0037] Put the cut ITO glass into water and add decontamination powder to clean it, then use deionized water to ultrasonically clean it 3 times, then use acetone to ultrasonically clean it 2 times, and finally use absolute ethanol to clean it twice, and dry it for use. Dissolve poly 4-(4-methacryloyloxy)-azo)pyridine in DMF to prepare a polymer solution with a concentration of 15 mg / mL; spin-coat the solution on clean ITO glass to prepare a layer of polymer The thin film of the material was vacuum-dried for 2 hours; the ITO glass with the above-mentioned polymerized film was put into the ethanol solution (15mg / mL) of platinum acetylacetonate for ten minutes, taken out and placed in absolute ethanol for five minutes, and taken out and vacuum-dried for 2 hours; Prepare a layer of polymer film on the above film by solution spin coating, and dry it in vacuum for 2 hours; then evaporate an aluminum electrode to obtain a ternary storage device ITO / Poly-Pt-Poly / Al, ITO: 130nm, polymer...

Embodiment 2

[0039] Put the cut ITO glass into water and add decontamination powder to clean it, then use deionized water to ultrasonically clean it 3 times, then use acetone to ultrasonically clean it 2 times, and finally use absolute ethanol to clean it twice, and dry it for use. Dissolve poly 4-(4-methacryloyloxy)-azo)pyridine in toluene to prepare a polymer solution with a concentration of 15 mg / mL; spin-coat the solution on clean ITO glass to prepare a layer of polymer The thin film of the material was vacuum-dried for 2 hours; the above-mentioned ITO glass prepared with a polymeric film was put into an ethanol solution (10 mg / mL) of palladium acetylacetonate for ten minutes, taken out and put in absolute ethanol for five minutes, and then taken out and vacuum-dried for 2 hours; Prepare a layer of polymer film on the above film by solution spin coating, and dry it in vacuum for 2 hours; then evaporate an aluminum electrode to obtain a ternary storage device ITO / Poly-Pd-Poly / Al, ITO: 11...

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Abstract

The invention discloses an active layer material and an application of the active layer material in preparing a ternary memory device. A thin film is prepared by synthesizing poly4-(4-methylacryloyloxy)-azo) pyridine with a solution spinning method; a metal complex layer is assembled on the surface of the polymer with a molecular self-assembly method; a polymer thin film is prepared with the solution spinning method, and an active layer is obtained. According to the device prepared from the active layer, stable multi-system storage is achieved; particularly, as the complex layer is introduced between the polymers with the molecular self-assembly method, transition of binary storage to ternary storage of the device is achieved.

Description

technical field [0001] The invention belongs to the technical field of storage devices; in particular, it relates to an active layer material and its application in preparing ternary storage devices. Background technique [0002] The concept of self-assembly technology was proposed in 1980. It refers to the technology of forming ordered molecular aggregates by adsorbing molecules containing active groups on the surface of a solid substrate. The formed molecular aggregates are also called molecular self-assembled films. In the 1990s, self-assembly technology was applied to surface chemistry, which promoted the research of self-assembly nanoparticle technology and broadened the research scope of self-assembly technology. The self-assembled monolayer film has a high degree of order and directionality, and the self-assembled film of organosilane derivatives can introduce functional groups in or at the end of the monolayer alkyl chain to change the wetting, corrosion, etching, et...

Claims

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Application Information

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IPC IPC(8): H01L51/00G11C11/56
CPCG11C11/5664H10K71/12H10K30/671
Inventor 徐庆锋路建美王丽华蒋军
Owner SUZHOU UNIV
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