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Method for preparing absorption layer CuInS<2> thin film for solar cell by chemical water bath

A solar cell and chemical water bath technology, applied in liquid chemical plating, sustainable manufacturing/processing, coating, etc., can solve the problems of many steps, long cycle, difficult operation, etc., and achieve simple preparation process and short preparation cycle , the effect of simple equipment

Active Publication Date: 2017-03-22
FUJIAN NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The whole experiment process has a long cycle, involves organic chemicals, has many steps, and is difficult to operate

Method used

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  • Method for preparing absorption layer CuInS&lt;2&gt; thin film for solar cell by chemical water bath
  • Method for preparing absorption layer CuInS&lt;2&gt; thin film for solar cell by chemical water bath
  • Method for preparing absorption layer CuInS&lt;2&gt; thin film for solar cell by chemical water bath

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] 1. Immerse the molybdenum glass substrate in common detergent, deionized water, ethanol, and acetone solution in sequence, then ultrasonically rinse with deionized water, and dry it with nitrogen gas for later use;

[0031] 2. First prepare the concentrations of 37.5mM indium chloride and 1.58mM thioacetamide respectively, then take 20mL of prepared indium chloride solution, 10mL of prepared thioacetamide solution, and 0.092mL of hydrochloric acid (36%-38 %) and 0.515mL of glacial acetic acid (>95.5%) and mix well, pour the solution into an empty bottle inserted with a substrate, and grow in a constant temperature water bath at 80°C for 15min to obtain an indium sulfide film with a certain film thickness. Rinse with deionized water and dry in a drying oven at 60°C for 1 hour;

[0032]3. Then configure copper sulfate, 0.5M sodium ascorbate, 0.5M trisodium citrate dihydrate, (25%-28%) ammonia solution with concentrations of 0.5M respectively, take 13mL copper sulfate, 7mL...

Embodiment 2

[0036] 1. Immerse the molybdenum glass substrate in common detergent, deionized water, ethanol, and acetone solution in sequence, then ultrasonically rinse with deionized water, and dry it with nitrogen gas for later use;

[0037] 2. First prepare the concentrations of 37.5mM indium chloride and 1.58mM thioacetamide, then take 20mL of prepared indium chloride solution, 10mL of prepared thioacetamide solution, and 0.092mL of hydrochloric acid (36%-38 %) and 0.515mL of glacial acetic acid (>95.5%) and mix well, pour the solution into an empty bottle inserted with a substrate, and grow it in a constant temperature water bath at 60°C for 15min to obtain an indium sulfide film with a certain film thickness. Rinse with deionized water and dry in a drying oven at 60°C for 1 hour;

[0038] 3. Then configure copper sulfate, 0.5M sodium ascorbate, 0.5M trisodium citrate dihydrate, (25%-28%) ammonia solution with concentrations of 0.5M respectively, take 13mL copper sulfate, 7mL sodium a...

Embodiment 3

[0040] 1. Immerse the molybdenum glass substrate in common detergent, deionized water, ethanol, and acetone solution in sequence, then ultrasonically rinse with deionized water, and dry it with nitrogen gas for later use;

[0041] 2. First prepare the concentrations of 37.5mM indium chloride and 1.58mM thioacetamide, then take 20mL of prepared indium chloride solution, 10mL of prepared thioacetamide solution, and 0.092mL of hydrochloric acid (36%-38 %) and 0.515mL of glacial acetic acid (>95.5%) and mix well, pour the solution into an empty bottle inserted with a substrate, and grow it in a constant temperature water bath at 80°C for 12min to obtain an indium sulfide film with a certain film thickness. Rinse with deionized water and dry in a drying oven at 60°C for 1 hour;

[0042] 3. Then configure copper sulfate, 0.5M sodium ascorbate, 0.5M trisodium citrate dihydrate, (25%-28%) ammonia solution with concentrations of 0.5M respectively, take 13mL copper sulfate, 7mL sodium a...

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Abstract

The invention relates to a method for preparing an absorption layer CuInS<2> thin film for a solar cell by chemical water bath. The adopted technical scheme comprises the steps of cleaning a substrate surface, immersing the substrate into an indium sulfide deposition liquid by a chemical water bath deposition method for depositing for 5-60min to obtain an indium sulfide thin film; immersing the molybdenum substrate deposited with the indium sulfide thin film into a cuprous oxide deposition liquid by the chemical water bath deposition method to be continually deposited with a layer of cuprous oxide thin film for 5-60min to obtain an In<2>S<3> / Cu<2>O precursor; and putting the obtained precursor into sulfur atmosphere and performing annealing to obtain the absorption layer CIS thin film for the solar cell. According to the method of preparing the absorption layer thin film provided by the invention, the novel Mo / In<2>S<3> / Cu<2>O precursor is prepared by the chemical water bath method with low cost, simple preparation process and short preparation period; and then the absorption layer thin film is obtained by sub-step thermal treatment.

Description

technical field [0001] The invention relates to the technical field of solar cell materials and devices, in particular to a chemical water bath for preparing solar cell absorbing layer CuInS 2 thin film method. Background technique [0002] With the rapid development of social economy, people's demand for fossil energy is increasing, and the plight of traditional fossil energy is becoming more and more severe. In addition, the excessive use of fossil energy will pollute the environment. Therefore, in order to develop an environment-friendly economy and solve the energy crisis, it is particularly important to find a new alternative energy source. Solar energy is a renewable energy with abundant reserves, clean and pollution-free. An efficient way to convert this energy directly into electricity is photovoltaics, or solar cells. [0003] So far, there are many types of solar cells, among which copper indium gallium selenide series thin film solar cells have the advantages ...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/032C23C18/00
CPCC23C18/00H01L31/0322H01L31/18Y02E10/541Y02P70/50
Inventor 王伟煌陈桂林陈水源黄志高
Owner FUJIAN NORMAL UNIV
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