A MoS2/Ag/MoS2 semiconductor film material and a preparing method thereof

A thin film material and semiconductor technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve product performance consistency, poor stability, material structure and performance instability, and product quality control difficulties Large and other problems, to achieve the effect of strong performance repeatability, stable structure, and improved uniformity and continuity

Active Publication Date: 2017-04-19
CHINA UNIV OF PETROLEUM (EAST CHINA)
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The above structural characteristics of molybdenum disulfide lead to its very large resistivity and poor carrier transport performance, which seriously hinders its application in the field of semiconductors and devices.
Due to differences in atomic radius, gain and loss of electrons, etc., this doping technology will inevitably form a large number of defects in molybdenum disulfide, resulting in instability of the material structure and performance of the product
[0009] In other words, the technical means of doping is used to carry out MoS 2 The modification of film materials, the consistency and stability of the product performance are relatively poor, and the control of product quality is difficult
[0010] More importantly, for the field of semiconductor device technology, this type of doped modified MoS 2 For thin film materials, the resistivity is still high and the conductivity is not ideal

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A MoS2/Ag/MoS2 semiconductor film material and a preparing method thereof
  • A MoS2/Ag/MoS2 semiconductor film material and a preparing method thereof
  • A MoS2/Ag/MoS2 semiconductor film material and a preparing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0066] The preparation method is as follows:

[0067] The first step, silicon substrate surface cleaning step

[0068] Select an intrinsically insulating and non-conductive Si single crystal substrate, and ultrasonically clean it in alcohol, acetone and deionized water for 180s;

[0069] Remove and blow dry with dry nitrogen;

[0070] The second step, the underlying MoS 2 Thin film layer surface deposition step

[0071] Put the cleaned Si single crystal substrate into a tray, put it into a vacuum chamber, and evacuate the vacuum chamber to a high vacuum, and adjust the temperature of the Si single crystal substrate to the first temperature of 200°C in an argon atmosphere , the argon gas pressure was adjusted to the first pressure of 3Pa, using DC magnetron sputtering technology, under the condition of constant 30W sputtering power, the ionized ions were used to bombard MoS 2 A ceramic target, on the upper surface of the Si substrate, deposit a layer of MoS with a thickness...

Embodiment 2

[0082] Description: This example is a comparative example, and the target product is pure MoS 2 Thin film material, no intermediate Ag intercalation.

[0083] The preparation method is as follows:

[0084] The first step, silicon substrate surface cleaning step

[0085] Select an intrinsically insulating and non-conductive Si single crystal substrate, and ultrasonically clean it in alcohol, acetone and deionized water for 180s;

[0086] Remove and blow dry with dry nitrogen;

[0087] The second step, the underlying MoS 2 Thin film layer surface deposition step

[0088] Put the cleaned Si single crystal substrate into a tray, put it into a vacuum chamber, and evacuate the vacuum chamber to a high vacuum, and adjust the temperature of the Si single crystal substrate to the first temperature of 200°C in an argon atmosphere , the argon gas pressure was adjusted to the first pressure of 3Pa, using DC magnetron sputtering technology, under the condition of constant 30W sputteri...

Embodiment 3

[0092] Only in the third step, the thickness of the Ag intercalation layer was adjusted to 3nm by adjusting the sputtering time;

[0093] Product performance test results:

[0094] It has been tested that at room temperature (20-25°C), the prepared MoS 2 / Ag / MoS 2 The electron carrier concentration, electron mobility and resistivity values ​​of the thin film material are 1.8×10 20 cm -3 、1.2cm 2 V -1 the s -1 and 9.8Ωcm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

A MoS2 / Ag / MoS2 semiconductor film material and a preparing method thereof are disclosed. The film has a layered structure, and includes a top MoS2 film layer, a Ag metal layer, a bottom MoS2 film layer and an intrinsic insulating Si substrate in order from top to bottom. According to the method, a DC magnetron sputtering technique is mainly adopted, and high-energy electrons are utilized to bombard different target material surfaces in order, wherein a MoS2 target material is firstly used to deposit the bottom MoS2 film layer on the Si substrate, then a metal Ag target material is utilized to deposit the Ag metal layer on the bottom MoS2 film layer, and the MoS2 target material is utilized finally to deposit the top MoS2 film layer on the Ag metal layer. Compared with pure MoS2 film products, the specific resistance of the MoS2 / Ag / MoS2 semiconductor film is reduced by 4 or more orders of magnitudes. According to the film material and the method, the process is simple, parameter control is simple and convenient, the yield is high, product quality stability and reliability are good, the manufacturing cost is low and the film material and the method are suitable for industrial production.

Description

technical field [0001] The invention relates to a semiconductor material and a preparation method thereof, in particular to a MoS 2 / Ag / MoS 2 Semiconductor thin film material and its preparation method. Background technique [0002] Molybdenum disulfide itself is not conductive, but has diamagnetism, and can be used as a linear photoconductor and a semiconductor showing P-type or N-type conductivity, and has the functions of rectification and energy conversion. [0003] Because the molybdenum disulfide thin film material has a typical layered structure, the layers are tightly bound together by covalent bonds, and each Mo atom is surrounded by six S atoms, which is in the shape of a triangular prism; the layers are weaker. Van der Waals forces combine to slide off easily. [0004] The above structural characteristics of molybdenum disulfide lead to its very high resistivity and poor carrier transport performance, which seriously hinders its application in the field of semi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/18C23C14/35
CPCC23C14/0623C23C14/185C23C14/352
Inventor 郝兰众刘云杰韩治德薛庆忠
Owner CHINA UNIV OF PETROLEUM (EAST CHINA)
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap