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Method for directing block copolymers to form nanostructures

A block copolymer and nanostructure technology, which is applied in the photoengraving process, instruments, optomechanical equipment and other directions of the pattern surface, can solve the problems of limited application and high defect rate, and achieves a single composition, low defect rate, and application. better sex effect

Active Publication Date: 2019-09-13
CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the high defect rate limits its application

Method used

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  • Method for directing block copolymers to form nanostructures
  • Method for directing block copolymers to form nanostructures
  • Method for directing block copolymers to form nanostructures

Examples

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preparation example Construction

[0093] The present invention has no special limitation on the preparation method of the homopolymer brush / mat. The homopolymer brush / felt can be synthesized by any suitable polymerization method, including polycondensation, ordinary radical polymerization, controlled radical polymerization (reversible addition-fragmentation transfer radical polymerization, atom transfer radical polymerization, Nitrox-regulated radical polymerization, etc.), ring-opening polymerization, anionic polymerization, cationic polymerization, coordination polymerization, etc. Preferably, for ethylenic monomers, graft-to or graft- The method from from forms a homopolymer brush; for heterocyclic monomers, a homopolymer brush can be synthesized by methods such as ring-opening polymerization; for a homopolymer felt, it can be synthesized by ordinary free radical polymerization. In particular, crosslinking is achieved by introducing a small amount of crosslinkable groups, for example, when preparing polyme...

Embodiment 1

[0159] The synthesis of the polymethacrylate polymer of embodiment 1 hydroxyl termination

[0160]

[0161] Using commercially available ethylene glycol bromoisobutyrate (HEBIB) as an initiator, the hydroxyl-terminated polymethacrylate polymer was synthesized by ATRP method. The molecular weight and molecular weight distribution of the polymers were characterized by gel permeation chromatography. Take the synthesis of polybenzyl methacrylate as an example to illustrate the preparation process of the polymer: 35.242g (200mmol) benzyl methacrylate, 0.422g (2mmol) HEBIB, 0.286g (2mmol) cuprous bromide and 0.625 g (4mmol) 2,2'-bipyridine was dissolved in 100ml of anisole, deoxygenated by bubbling nitrogen for 15 minutes, then sealed in a reaction bottle, stirred and reacted in an oil bath at 90°C for 6 hours, cooled, and used 100ml Dilute with tetrahydrofuran, pass through a neutral alumina column to remove copper salts, settle in methanol to obtain a white powder, filter out,...

Embodiment 2

[0166] Synthesis of embodiment 2 hydroxyl-terminated polyacrylate polymers

[0167] Using commercially available ethylene glycol bromoisobutyrate (HEBIB) as an initiator, the hydroxyl-terminated polyacrylate polymer was synthesized by ATRP method. The molecular weight and molecular weight distribution of the polymers were characterized by gel permeation chromatography. Taking the synthesis of poly(4-acetoxy)styrene as an example to illustrate the preparation process of the polymer. 32.438g (200mmol) benzyl acrylate, 0.422g (2mmol) HEBIB, 0.286g (2mmol) cuprous bromide and 0.7214g (4mmol) N,N,N',N,'N"-pentamethyldiethylene Ethyltriamine was dissolved in 100ml of anisole, nitrogen bubbled for 15 minutes to remove oxygen, then sealed in a reaction bottle, stirred and reacted in an oil bath at 90°C for 6 hours, cooled, diluted with 100ml of tetrahydrofuran, and subjected to neutral oxidation The aluminum column was used to remove the copper salt, settled into methanol to obtain ...

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Abstract

The present invention provides a method for directing block copolymers to form nanostructures, comprising: forming a homopolymer brush / felt on a substrate; coating the block copolymer on the homopolymer brush / felt; inducing block copolymer Phase separation and self-assembly form a copolymer layer with a nanostructure; one phase in the copolymer layer with a nanostructure is removed, and the unremoved phase serves as a mask to transfer the nanostructure to the substrate. The present invention uses a homopolymer brush / felt to guide the block copolymer to form a nanostructure. Since the homopolymer brush / felt of the present invention has a single, uniform, clear composition and no difference in reactivity rate, it is used to guide the formation of the block copolymer. In the nanostructure, the wetting properties of the substrate and the block copolymer can be regulated, so that domains perpendicular to or parallel to the substrate can be obtained. The defect rate of guiding the block copolymer to form a nanostructure is low. The method of the present invention also has universal applicability, and suitable homopolymer brushes / felts can be selected according to different block copolymers, and the applicability is better.

Description

technical field [0001] The invention relates to the technical field of nanostructure manufacture, in particular to a method for leading a block copolymer to form a nanostructure. Background technique [0002] The present invention relates to the 2011 edition of the International Semiconductor Technology Roadmap (ITRS) promulgated by the US Semiconductor Research Consortium (SRC), pointing out that the technology for preparing 16nm or smaller dynamic random access memory (DRAM) or microprocessor unit (MPU) has not yet been determined Program. 193nm lithography multiple exposure technology is expected to be used in the manufacture of 16nm MPU / DRAM, but 193nm lithography will no longer be an option for 11nm MPU / DRAM. In the ITRS, the SRC selected potential candidate technologies for 16nm and 11nm MPU / DRAM, including "DSA+litho", the guided assembly of block copolymers. Research in the past 10 years has shown that the basic elements required for semiconductor chip design can b...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08F120/18C08F112/14C08F292/00C08G63/08C08G64/30C08F220/18C08F220/32C08F226/06G03F7/20
CPCC08F112/14C08F120/18C08F220/18C08F226/06C08F292/00C08F2438/01C08G63/08C08G64/30G03F7/20G03F7/2059C08F220/325
Inventor 季生象逄媛媛万雷刘亚栋韩苗苗
Owner CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI
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