Preparation method of polyvinylidene fluoride composite material with high dielectric constant and low dielectric loss
A technology of polyvinylidene fluoride and high dielectric constant, which is applied in the field of preparation of dielectric polymer composite materials, can solve the problems of increased dielectric loss, conduction, material mechanical properties and processing performance degradation, etc. Effects of electrical loss, improvement of dielectric properties, and improvement of electrical conductivity
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0025] The preparation method of polyvinylidene fluoride composite material with high dielectric constant and low dielectric loss comprises the following steps:
[0026] A, preparation of N,N-dimethylformamide solution of graphene oxide:
[0027] Mix an aqueous solution of graphene oxide with a mass percentage of 1% and N,N-dimethylformamide, and the volume ratio of N,N-dimethylformamide and graphene oxide aqueous solution is 1:2; then decompress Rotary distillation was carried out to obtain a N,N-dimethylformamide solution of graphene oxide, which was then subjected to ultrasonic treatment for 2 hours. The temperature of vacuum rotary distillation is 80°C, the time is 2h, the vacuum degree is 0.1MPa; the intensity of ultrasonic treatment is 5×10 4 W / m 2 .
[0028] B. Preparation of graphene oxide / silicon dioxide nano-hybrid material:
[0029] Get nano-silica and add it to the N,N-dimethylformamide solution of graphene oxide in step A to obtain a mixed solution; wherein,...
Embodiment 2
[0036] The preparation method of polyvinylidene fluoride composite material with high dielectric constant and low dielectric loss comprises the following steps:
[0037] A, preparation of N,N-dimethylformamide solution of graphene oxide:
[0038] Mixing an aqueous solution of graphene oxide with a mass percentage of 1% and N,N-dimethylformamide, the volume ratio of N,N-dimethylformamide and graphene oxide aqueous solution is 1:2; then decompressing Rotary distillation was carried out to obtain a N,N-dimethylformamide solution of graphene oxide, which was then subjected to ultrasonic treatment for 0.5 h. The temperature of vacuum rotary distillation is 60℃, the time is 3h, the vacuum degree is 0.1MPa; the intensity of ultrasonic treatment is 2.5×10 4 W / m 2 .
[0039]B. Preparation of graphene oxide / silicon dioxide nano-hybrid material:
[0040] Get nano-silica and add it to the N,N-dimethylformamide solution of graphene oxide in step A to obtain a mixed solution; wherein, ...
Embodiment 3
[0046] The preparation method of polyvinylidene fluoride composite material with high dielectric constant and low dielectric loss comprises the following steps:
[0047] A, preparation of N,N-dimethylformamide solution of graphene oxide:
[0048] Mixing an aqueous solution of graphene oxide with a mass percentage of 1% and N,N-dimethylformamide, the volume ratio of N,N-dimethylformamide and graphene oxide aqueous solution is 1:2; then decompressing Rotary distillation was carried out to obtain a N,N-dimethylformamide solution of graphene oxide, which was then subjected to ultrasonic treatment for 1 h. The temperature of vacuum rotary distillation is 70°C, the time is 2.5h, the vacuum degree is 0.1MPa; the intensity of ultrasonic treatment is 3.5×10 4 W / m 2 .
[0049] B. Preparation of graphene oxide / silicon dioxide nano-hybrid material:
[0050] Get nano-silica and add it to the N,N-dimethylformamide solution of graphene oxide in step A to obtain a mixed solution; wherein...
PUM
Property | Measurement | Unit |
---|---|---|
particle diameter | aaaaa | aaaaa |
specific surface area | aaaaa | aaaaa |
specific surface area | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com