A method for realizing exciton laser emission of gallium telluride (gate) two-dimensional material

Abstract

The invention discloses a method for achieving gallium telluride (GaTe) two-dimensional material exciton laser emission. The method comprises the following process steps: a) preparing a zinc oxide (ZnO) hexagonal micrometer disk on a sapphire substrate, and taking the zinc oxide (ZnO) hexagonal micrometer disk as a resonant cavity of GaTe material lasing; b) synthesizing a GaTe material on the sapphire substrate where the ZnO hexagonal micrometer disk grows, and taking the GaTe material as a gain material of the lasing; and c) representing a synthesized composite structure by using a scanning electronic microscope, Raman, an atomic force microscope, a transmission electron microscope and other representation means, and then testing a luminous property of GaTe under 532nm femtosecond laser pumping. A dimension of the ZnO hexagonal micrometer disk, a thickness of the GaTe material and other parameters are controlled through adjustments for gas flow, temperature and other conditions. The method has the advantages of high efficiency and the controllable synthesis, and the GaTe / ZnO hexagonal micrometer disk obtained through preparation has the high crystallization quality; and a further study on the synthesis of the new two-dimensional material GaTe is possessed, and GaTe single-layer exciton laser emission is also achieved at the first time.

Description

technical field [0001] The invention relates to the field of nanomaterial preparation and nanolaser, in particular to a method for realizing gallium telluride (GaTe) two-dimensional material exciton laser emission. Background technique [0002] As a new type of p-type sulfide, GaTe has a high hole density (6×10 12 cm -2 ), unlike other transition metal sulfides, its bulk material and atomic layer material both have a direct band gap (1.65eV) at room temperature. Gallium telluride belongs to the monoclinic crystal system (C 2 / m space group), the hexagonal phase is its metastable phase. Like other two-dimensional materials, the atoms in the GaTe layer are bonded by covalent bonds, while the interlayers are bonded by weak van der Waals force. Its layer is composed of Te-Ga-Ga-Te along the c-axis. The suitable energy band width makes it have potential applications in solar window materials and room temperature radiation detection, but because of its complex crystal structur...

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Problems solved by technology

[0005] One: the pollution introduced during the transfer of the single-layer chalcogenide material to the target device and the damage of the chalcogenide material itself. Obviously, the pollution is easy to cause the weakening of the spontaneous emission ability and the introduction of uncontrollable and unexplainable other Therefore, the damage of the material (such as wrinkles) weakens the ability of electron holes to propagate inside the material, thereby reducing the ability of spontaneous emission

[0006] Second: the target devices used, such as photonic crystals and HSQ / Si 3 N 4 The manufacture of microcavities is a rather complicated process, and the success rate and cost will increase exponentially, which is not suitable for the industrialization of technology

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