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Preparation method of ternary zinc oxide and zinc telluride tellurium nano composition

A zinc oxide and tellurium nanotechnology, applied in the direction of zinc oxide/zinc hydroxide, selenium/tellurium compound, metal selenide/telluride, etc., can solve the high requirements and danger of binary zinc oxide zinc telluride compound experiment The problems of high coefficient and cost, low operability, etc., to achieve the effect of controllable product morphology, low cost and high safety factor

Inactive Publication Date: 2017-07-25
XINJIANG UNIVERSITY
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Problems solved by technology

[0005] The binary zinc oxide zinc telluride complex prepared by the above two methods has high requirements for experiments, complex procedures, low operability, and high risk factor and cost.

Method used

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  • Preparation method of ternary zinc oxide and zinc telluride tellurium nano composition
  • Preparation method of ternary zinc oxide and zinc telluride tellurium nano composition
  • Preparation method of ternary zinc oxide and zinc telluride tellurium nano composition

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Embodiment 1

[0022] Firstly, ZnO rice particles were prepared and synthesized using a solid-phase method. Pour zinc nitrate and sodium hydroxide with a molar ratio of 2:1 into the mortar and grind for half an hour. Wash and dry, collect samples. In the lining of the autoclave, weigh 2mmol of zinc oxide, 1mmol of sodium selenite and 0.02mmol of polyvinylpyrrolidone powder and add hydrazine hydrate, diethyltetrahexylamine, and deionized water in sequence. In the mixed solution (the mixing ratio is 10:2:10), stir evenly, place in a constant temperature drying oven at 200°C for 24 hours, and cool naturally to room temperature. The samples were washed several times, dried in a vacuum oven at a constant temperature of 60 °C for 6 h, and then annealed in a tube furnace at 400 °C for 2 hours to obtain zinc oxide telluride zinc telluride composites.

[0023] Such as figure 1 Shown are the XRD patterns of zinc oxide nanoparticles and zinc oxide zinc telluride nanocomposites. The XRD diffraction ...

Embodiment 2

[0026] In the lining of the autoclave, weigh 2mmol of zinc oxide, 1mmol of sodium selenite and 0.02mmol of polyvinylpyrrolidone powder and add hydrazine hydrate, diethyltetrahexylamine, and deionized water in sequence. In the mixed solution (the mixing ratio is 10:1.5:10), stir evenly, place in a constant temperature drying oven at 200°C for 24 hours, and cool naturally to room temperature. The samples were washed several times, dried in a vacuum oven at a constant temperature of 60 °C for 6 h, and then annealed in a tube furnace at 400 °C for 2 hours to obtain zinc oxide telluride zinc telluride composites.

[0027] Such as image 3 Shown are the XRD and SEM images of the obtained product. The XRD diffraction peaks of the sample are mixed peaks of the three substances, and 1, 2, and 3 correspond to zinc oxide PDF36-1451, zinc telluride PDF15-0746 and tellurium PDF36-1452 cards respectively. . From the SEM image, it can be clearly seen that the sample is a hollow nanotube, t...

Embodiment 3

[0029] In the lining of the autoclave, weigh 2mmol of zinc oxide, 1mmol of sodium selenite and 0.02mmol of polyvinylpyrrolidone powder and add hydrazine hydrate, diethyltetrahexylamine, and deionized water in sequence. In the mixed solution (the mixing ratio is 10:4:10), stir evenly, place in a constant temperature drying oven at 200°C for 24 hours, and cool naturally to room temperature. The samples were washed several times, dried in a vacuum oven at a constant temperature of 60 °C for 6 h, and then annealed in a tube furnace at 400 °C for 2 hours to obtain zinc oxide telluride zinc telluride composites.

[0030] Such as Figure 4 Shown are the XRD and SEM images of the obtained product. The XRD diffraction peaks of the sample are mixed peaks of the three substances, 1, 2, and 3 respectively correspond to zinc oxide PDF36-1451, zinc telluride PDF15-0746 and tellurium PDF36-1452 cards . From the SEM image, it can be clearly seen that the sample is composed of a large number...

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Abstract

The invention discloses a preparation method of a ternary zinc oxide telluride zinc telluride nano-composite, the method comprising: mixing solutions of hydrazine hydrate, diethyltetrahexylamine and deionized water in different volume ratios at 10:1.5 respectively :10, 10:2:10 and 10:4:10, dissolve a certain amount of zinc oxide, sodium tellurite, and polyvinyl pyrrolidone powder, then react at 200°C for 24 hours, cool, wash, collect, and dry . Finally, it was annealed in a tube furnace at 400°C for 2 hours to obtain the ternary zinc oxide telluride zinc telluride nanocomposite. The experimental method of the invention is simple and safe, has low equipment requirements and low cost, and the prepared ternary zinc oxide zinc telluride sample has good crystallinity and dispersibility, and the appearance of the product is controllable.

Description

technical field [0001] The invention belongs to the technical field of semiconductor nanomaterials and their preparation, and relates to the preparation of nanomaterials and research on photocatalytic degradation of pollutants. It specifically relates to a preparation method of a ternary zinc oxide telluride zinc telluride nanocomposite. Background technique [0002] Zinc oxide and zinc telluride are important II-VI direct bandgap semiconductor materials, and their bandgap widths at room temperature are 3.2 eV and 2.26 eV, respectively. ZnO has potential applications in the short-wavelength optoelectronic neighborhood due to its wide bandgap. Moreover, zinc oxide and zinc telluride are important semiconductor materials with many optical, electrical, magnetic and other properties. It has broad application prospects in the fields of photocatalysis, hydrogen production, lithium batteries and solar cells. Moreover, zinc oxide and zinc telluride composite materials have the co...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G9/02C01B19/00C01B19/02B82Y40/00
CPCC01G9/02B82Y40/00C01B19/007C01B19/02C01P2002/72C01P2002/84C01P2004/03C01P2004/64
Inventor 何瑞吴荣陈媛
Owner XINJIANG UNIVERSITY
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