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Preparation method for ITO (indium tin oxide) evaporation target

A technology of tin oxide and powder, applied in the field of evaporative coating material preparation, can solve the problems of inability to achieve cracking and insufficient bonding strength, achieve good thermal shock resistance and reduce sintering temperature.

Inactive Publication Date: 2017-09-26
ANHUI TUOJITAI NOVEL CERAMIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, by simply reducing the density of the vapor deposition material, although part of the thermal stress can be released and the possibility of cracking of ceramics when bombarded by high-energy electron beams can be reduced, the requirement of completely avoiding cracking cannot be met due to insufficient bonding strength.

Method used

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  • Preparation method for ITO (indium tin oxide) evaporation target

Examples

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Comparison scheme
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Embodiment 1

[0025] This embodiment provides a method for preparing an ITO evaporation target, comprising the following steps:

[0026] 1) Carry out heat treatment on the raw material indium oxide micron powder and tin oxide nano powder, the heat treatment temperature is 800-900°C, and the heat treatment time is 5 hours; the particle size of the tin oxide powder is 10-20nm;

[0027] 2) Mix the heat-treated raw material indium oxide micro-powder and tin oxide nano-powder in a mass ratio of 9:1, and perform ball milling and mixing in an ethanol medium. The ball milling time is 12 hours, then add additives, and continue mixing for 14 hours. The powder is uniformly coated with organic matter, and the additives include binder, lubricant and dispersant; the binder is polyvinyl alcohol, propylene polymer or acrylic emulsion; the lubricant is monoglyceride; the dispersant is a weight ratio of 1 : 1.5 mixture of citric acid and polyethylene glycol;

[0028] 3) The fat-blended ITO powder treated in...

Embodiment 2

[0035] This embodiment provides a method for preparing an ITO evaporation target, comprising the following steps:

[0036] 1) Carry out heat treatment on the raw material indium oxide micron powder and tin oxide nano powder, the heat treatment temperature is 800°C, and the heat treatment time is 8 hours; the particle size of the tin oxide powder is 10-20nm;

[0037] 2) Mix the heat-treated raw material indium oxide micro-powder and tin oxide nano-powder in a mass ratio of 9:1, and perform ball milling and mixing in an ethanol medium. The ball milling time is 8 hours, then add additives, and continue mixing for 24 hours. The powder is uniformly coated with organic matter, and the additives include binder, lubricant and dispersant; the binder is polyvinyl alcohol, propylene polymer or acrylic emulsion; the lubricant is monoglyceride; the dispersant is a weight ratio of 1 : 1 mixture of citric acid and polyethylene glycol;

[0038] 3) The fat-blended ITO powder treated in step 2...

Embodiment 3

[0045] This embodiment provides a method for preparing an ITO evaporation target, comprising the following steps:

[0046] 1) Carry out heat treatment on the raw material indium oxide micron powder and tin oxide nano powder, the heat treatment temperature is 1000°C, and the heat treatment time is 2 hours; the particle size of the tin oxide powder is 10-20nm;

[0047] 2) Mix the heat-treated raw material indium oxide micro-powder and tin oxide nano-powder at a mass ratio of 9:1, and perform ball milling and mixing in an ethanol medium. The ball milling time is 16 hours, then add additives, and continue mixing for 4 hours to make The powder is uniformly coated with organic matter, and the additives include binder, lubricant and dispersant; the binder is polyvinyl alcohol, propylene polymer or acrylic emulsion; the lubricant is monoglyceride; the dispersant is a weight ratio of 1 : 2 mixtures of citric acid and polyethylene glycol;

[0048] 3) The fat-blended ITO powder treated ...

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Abstract

The invention discloses a preparation method for an ITO (indium tin oxide) evaporation target. The method comprises the following steps: (1) performing heat treatment on raw materials micrometer indium oxide powder and nanometer tin oxide powder; (2) uniformly mixing the heat-treated raw materials micrometer indium oxide powder and nanometer tin oxide powder, and then adding an additive for wet ball milling; (3) performing constant temperature and constant humidity drying on grease-doped ITO powder treated in step (2); (4) placing dried granulated ITO powder in a metal die for prepressing forming, and performing cold isostatic pressing to obtain a green body; (5) greasing the green body to obtain a preform; (6) sintering the preform to obtain an ITO target material. According to the method, a preparation process is improved to realize structure strengthening of an ITO evaporation material and solve the problem of cracking in case of electron beam bombardment.

Description

technical field [0001] The invention belongs to the technical field of preparation methods of evaporation coating materials, and in particular relates to a preparation method of an ITO evaporation target. Background technique [0002] The main component of ITO (tin indium oxide) is a composite oxide in which tin oxide is dissolved in indium oxide. ITO has good photoelectric properties, and films containing ITO have high conductivity and visible light transmittance, and are widely used in various fields such as solar cells, liquid crystal display devices, and touch panels. The methods for preparing ITO thin films include sputtering method, vacuum evaporation method, sol-gel method, cluster deposition method and PLD method. [0003] The vacuum evaporation method requires ceramic evaporation raw materials with good thermal shock resistance. The raw material for electron beam evaporation can be smaller particles, or large blocks. If small particles are used to pile up and eva...

Claims

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Application Information

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IPC IPC(8): C04B35/01C04B35/622C04B35/626
CPCC04B35/01C04B35/622C04B35/6261C04B35/62645C04B2235/3286C04B2235/3293C04B2235/5436C04B2235/5454
Inventor 张天舒宋晓超孔令兵蒋卫国钱邦正
Owner ANHUI TUOJITAI NOVEL CERAMIC TECH
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