Pretreatment method for growing one-crystal orientation zinc oxide

A zinc oxide and pretreatment technology, applied in the field of semiconductors, can solve the problems of poor crystal quality of zinc oxide films, and achieve the effect of good preparation

Active Publication Date: 2017-11-28
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The embodiment of the present invention provides a pretreatment method for growing zinc oxide with a single crystal orientation, which solves the technical problem of poor crystallization quality and polycrystalline orientation films in the prior art, and realizes relatively Good technical effect of preparing single crystal zinc oxide thin film

Method used

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Embodiment 1

[0030] Such as figure 1 As mentioned above, the embodiment of the present invention provides a pretreatment method for growing zinc oxide with a single crystal orientation, the method comprising:

[0031] Step 110: Put the cleaned substrate into the reaction chamber;

[0032] Specifically, cleaning the substrate adopts a sapphire cleaning step to clean the substrate, and the specific process also includes:

[0033] Step 101: put the substrate in acetone and ultrasonically perform the first predetermined time, and blow it dry after taking it out;

[0034] Step 102: Put the substrate into the isopropanol solution and sonicate for a second predetermined time, and blow it dry after taking it out;

[0035] Step 103: put the substrate in deionized water and ultrasonically for a third predetermined time, and blow it dry after taking it out.

[0036] The above-mentioned first predetermined time, second predetermined time and third predetermined time are dynamically adjusted by thos...

Embodiment approach

[0054] In order to more clearly illustrate the technical solutions and technical effects of the embodiments of the present invention, the present invention provides specific implementation solutions, the specific contents of which are as follows:

[0055] Put the sapphire substrate with C-axis single orientation into acetone, isopropanol, and deionized water for 5 minutes for ultrasonic cleaning, take it out and dry it, and put it into the chamber of the atomic layer deposition equipment. Turn on the foreline pump and Roots pump of the equipment, heat the sample tray, chamber wall and carrier gas channel at the same time, and set the heating temperature to 200 °C, 100 °C and 110 °C respectively, and pass the carrier gas high-purity nitrogen during the heating process. When the chamber wall temperature rises to 80°C, turn on the molecular pump, turn off the carrier gas, and stop the molecular pump until the chamber wall temperature rises to 100°C. After the molecular pump stops...

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Abstract

The invention discloses a pretreatment method for growing one-crystal orientation zinc oxide, and belongs to the technical field of semiconductors. According to the embodiment of the invention, the pretreatment method adopts the technical steps of putting a cleaned substrate into a reaction chamber; powering on a roots pump and a backing pump, heating a sample disc, a gas carrying channel and a chamber wall while vacuuming, and blowing a carrying gas in the heating process; when the temperature of the chamber wall reaches first preset temperature, cutting off the carrying gas, and powering on a molecular pump; when the temperature of the chamber wall reaches second preset temperature, powering off the molecular pump, and opening the carrying gas; and when the temperature of sample disc is changed within a first temperature range, and the gas carrying channel and the chamber wall are changed within a second temperature range, starting a later deposition process, and thus a technical effect of relatively well preparing a single crystal zinc oxide membrane is achieved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a pretreatment method for growing zinc oxide with a single crystal orientation. Background technique [0002] With the continuous development of semiconductor technology, semiconductor thin films play a very important role in high-tech industries such as microelectronics, optics, and informatics. The preparation and doping technology of high crystal quality semiconductor thin films is developed, especially for the third generation semiconductor The preparation, characterization, doping and characteristics research of the material ZnO thin film are of great significance to important application fields for new energy, including ultraviolet light-emitting materials, ultraviolet detectors, highly integrated photonics and electronic devices, solar cells, etc. . [0003] Zinc oxide, as a new type II-VI compound with direct bandgap and wide bandgap, has a large bandgap at room t...

Claims

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Application Information

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IPC IPC(8): C30B25/00C30B29/16
CPCC30B25/00C30B29/16
Inventor 张思敏夏洋卢维尔程嵩李楠
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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