N-type surface tunneling oxidation passivation contact manufacturing method for silicon-based solar cell
A solar cell, tunneling oxidation technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems affecting the electrical performance of cells, passivation layer damage, and limited passivation effect, achieving excellent passivation effects and improving Open circuit voltage, effect of reducing interface state density
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Embodiment 1
[0029] A method for fabricating an N-type surface tunneling oxidation passivation contact of a silicon-based solar cell, specifically adopting the following steps:
[0030] (1) After the single crystal silicon wafer is etched, textured, polished, diffused and ion implanted, etc., the N-type surface of the single crystal silicon wafer that needs to be tunneled, oxidized, and passivated is cleaned with HF. Removal of SiO on silicon wafer surface 2 , BSG, PSG and other oxide layers;
[0031] (2) Oxidize the surface of the silicon wafer to form an ultra-thin tunnel oxide layer with a thickness of 1 nm. The oxide layer growth method uses concentrated nitric acid to oxidize the surface of the silicon wafer, and the thickness of the oxide layer is controlled by the concentration, temperature and oxidation time of concentrated nitric acid. The concentration of nitric acid is 69%, the temperature is 25°C, and the time is 10 minutes;
[0032] (3) Deposit a thin silicon layer above the...
Embodiment 2
[0038] A method for fabricating an N-type surface tunneling oxidation passivation contact of a silicon-based solar cell, specifically adopting the following steps:
[0039] (1) After etching, texturing, polishing, diffusion, and ion implantation on the single crystal silicon wafer, use the mixed solution of HF and HCl to tunnel the N Clean the surface of the silicon wafer to remove SiO on the surface of the silicon wafer 2 , BSG, PSG and other oxide layers;
[0040](2) Oxidize the surface of the silicon wafer to form an ultra-thin tunnel oxide layer with a thickness of 2nm. Ozone is used to oxidize the surface of the silicon wafer to grow the oxide layer, and the thickness of the oxide layer is controlled by the concentration, temperature and oxidation time of the ozone. The ozone concentration is 50ppm, the temperature is 100°C, and the time is 10 minutes;
[0041] (3) A thin layer of silicon is deposited on the ultra-thin tunneling oxide layer by chemical vapor deposition,...
Embodiment 3
[0046] A method for fabricating an N-type surface tunneling oxidation passivation contact of a silicon-based solar cell, specifically adopting the following steps:
[0047] (1) After the single crystal silicon wafer is etched, textured, polished, diffused and ion implanted, etc., the N-type surface of the single crystal silicon wafer that needs to be tunneled, oxidized, and passivated is cleaned with HF. Removal of SiO on silicon wafer surface 2 , BSG, PSG and other oxide layers;
[0048] (2) Oxidize the surface of the silicon wafer to form an ultra-thin tunnel oxide layer with a thickness of 1.5nm. The way of oxide layer growth is thermal oxidation, and the thickness of the oxide layer is controlled by the oxidation temperature and time. The temperature is 600°C and the time is 20 minutes;
[0049] (3) A thin layer of silicon is deposited on the ultra-thin tunneling oxide layer by chemical vapor deposition, and a low-pressure chemical vapor deposition method is used, and th...
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