A kind of plasmonic structure substrate and its preparation and application

A plasmon and substrate technology, which is applied to the substrate field of perovskite-based optoelectronic devices, can solve problems such as affecting device stability and changing material structure, and achieves strong structural stability, convenient preparation, and carrier high concentration effect

Active Publication Date: 2019-08-13
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] It is a research hotspot in the field of solar cells to enhance absorption by chemically doping nano-metal particles into perovskite materials, and then this method will directly change the structure of the material, thereby affecting the stability of the overall device.

Method used

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  • A kind of plasmonic structure substrate and its preparation and application
  • A kind of plasmonic structure substrate and its preparation and application
  • A kind of plasmonic structure substrate and its preparation and application

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preparation example Construction

[0051] The preparation method of the perovskite photodetector based on the plasmonic structure substrate is further provided below, including the following steps:

[0052] Step 1, the SiO 2 / Si substrate 1 is ultrasonically cleaned with an organic solvent, and ultrasonically cleaned in the order of acetone (10-15min)→ethanol (10-20min)→deionized water (20-30min), and finally removes the residues on the substrate with a nitrogen gun. Blow dry with ion water to get clean SiO 2 / Si substrate.

[0053] Step two, such as figure 1 As shown, the SiO obtained in the previous step 2 The Si surface of the / Si substrate 1 is plated with gold as the reflective layer 2 by electron beam evaporation coating method, and then coated with SiO by thermal evaporation coating method. 2 as insulating layer 3. In order to obtain a better film quality, the vacuum degree of the electron beam evaporation coating instrument and the thermal evaporation coating instrument should be pumped to 10 -8 ...

Embodiment 1

[0059] SEM image of a perovskite photodetector based on a plasmonic substrate Figure 5 shown, bottom-up including SiO 2 / Si substrate 1, gold film reflective layer 2, SiO 2 Insulating layer 3, positive and negative electrodes 4, gold rectangular array 5 and hole transport layer 6, CH3 NH 3 PB 3 Absorbent layer7. Among them, the gold film reflective layer 2 is deposited on SiO by electron beam evaporation. 2 / Si substrate 1, SiO coated by thermal evaporation 2 The insulating layer 3 is on the gold film reflective layer 2, and the positive and negative electrodes 4 produced by electron beam exposure are on the SiO 2 On the insulating layer 3, 3nmTi / 50nm Au is obtained by electron beam evaporation. Au rectangular array 5 in SiO 2 On the insulating layer 3 and between the two positive and negative electrodes 4, the material is gold, the height is 30nm, the side length is 250nm, the period is 350nm, and the array size is 30μm×30μm. (Under this radius and period, the field...

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Abstract

The invention discloses a plasmon structure substrate and its preparation and application. The plasmonic structure substrate includes a substrate, a reflective layer, an insulating layer, a metal nanostructure array, and positive and negative electrodes. For the first time, the plasmonic field enhancement principle is used to prepare a perovskite device enhanced substrate, and the calcium Titanium material realizes the expansion of the absorption limit in the infrared light band and the enhanced absorption in the entire absorption range, avoiding the negative effects caused by the chemical doping of the perovskite layer.

Description

technical field [0001] The invention relates to a substrate for perovskite-based optoelectronic devices, specifically an enhanced absorption limit substrate for perovskite photodetectors and perovskite solar cells, which can enhance the overall absorption efficiency of perovskite materials and Extend its absorption area in the near-infrared range. Background technique [0002] Perovskite (perovskite) material refers to the material with CaTiO 3 A class of organic-inorganic hybrid materials of the same crystal structure, belonging to semiconductors. Its chemical formula is AMX 3 , where A is generally an organic cation CH 3 NH 3 + and HN=CH(NH 3 ) + etc., M is a divalent metal ion Pb 2+ or Sn 2+ etc. X is a halogen ion such as Cl, Br or I. In recent years, perovskite materials have been widely used in solar cells, photodetectors and other fields due to their excellent properties such as high electron mobility, high carrier density, wide-band absorption, stable struc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/44H01L51/48
CPCH10K71/00H10K30/87Y02E10/549Y02P70/50
Inventor 方哲宇杜博文朱星
Owner PEKING UNIV
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