Pressureless sintered conductive silver paste and preparation method thereof

A technology of conductive silver paste and silver powder, which is applied in the manufacture of cables/conductors, conductive materials dispersed in non-conductive inorganic materials, circuits, etc., can solve the problems of non-intensive diffusion and achieve reduced hard agglomeration and high bonding characteristics , Improve the effect of compactness

Active Publication Date: 2018-05-18
SHENZHEN INST OF ADVANCED TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, nano-scale particles are often in an unstable state, and there is a non-de

Method used

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  • Pressureless sintered conductive silver paste and preparation method thereof
  • Pressureless sintered conductive silver paste and preparation method thereof
  • Pressureless sintered conductive silver paste and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] A. Weigh 1.0g potassium iodate and dissolve it in 20mL deionized water. Weigh 5.0 g of micron silver powder with a size of 2 μm in 50 mL of absolute ethanol and ultrasonicate for 10 min. The dissolved potassium iodate solution and the dispersed micron silver powder are mixed, magnetically stirred at room temperature for 60 minutes, and centrifuged and washed several times.

[0028] B. Preparation of bonding carrier: Weigh 2.0g of absolute ethanol, 0.02g of polyvinylpyrrolidone, and 0.01g of hydroxypropylmethylcellulose in a mixing tank, and mix them thoroughly with a mixer at 2000rpm to form a A bonding carrier with a certain viscosity.

[0029] C. Add the surface-modified silver powder to the bonding carrier, mix it with a blender at 2000 rpm, and then weigh 5.0 g of 300nm nano silver particles and the bonding carrier, and use the blender to Mixing at a speed of 2000rpm can obtain a pressureless sintered conductive silver paste.

Embodiment 2

[0031] A. Weigh 1.0g potassium perchlorate and dissolve it in 20mL deionized water. Weigh 5.0 g of silver powder with a size of 1 μm in 50 mL of absolute ethanol and ultrasonicate for 10 minutes. The dissolved potassium iodate solution and the dispersed micron silver powder are mixed, magnetically stirred at room temperature for 60 minutes, and centrifuged and washed several times.

[0032] B. Preparation of bonding carrier: Weigh 2.0g of ethylene glycol monomethyl ether, 0.02g of polyvinylpyrrolidone, and 0.01g of terpineol in a mixing tank, and mix them thoroughly with a mixer at 2000rpm to form a A bonding carrier with a certain viscosity.

[0033] C. Add the surface-modified silver powder to the bonding carrier, mix it with a blender at 2000 rpm, and then weigh 5.0 g of 100nm nano silver particles and the bonding carrier, and use the blender to Mixing at a speed of 2000rpm can obtain a pressureless sintered conductive silver paste.

Embodiment 3

[0035] A. Weigh 1.0g potassium perchlorate and dissolve it in 20mL deionized water. Weigh 5.0 g of silver powder with a size of 3 μm in 50 mL of absolute ethanol and ultrasonicate for 10 minutes. The dissolved potassium iodate solution and the dispersed micron silver powder are mixed, magnetically stirred at room temperature for 60 minutes, and centrifuged and washed several times.

[0036] B. Preparation of bonding carrier: Weigh 2.0 g of diethylene glycol monobutyl ether acetate and 0.01 g of terpineol in a mixing tank, and mix thoroughly with a mixer at 2000 rpm to form a certain viscosity Bonded carrier.

[0037] C. Add the surface-modified silver powder to the bonding carrier and mix it with a mixer at a speed of 2000 rpm to obtain a pressureless sintered micron silver paste.

[0038] by Figure 1~Figure 9 By comparison, it can be found that the conductive silver paste obtained according to Examples 1, 2 and 3 of the present invention has better sintering performance under no...

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Abstract

The invention relates to pressureless sintered conductive silver paste which comprises: 70 -85% of silver powder, 5 -20% of solvent, 0.1 -2% of a dispersing agent and 0.5 -5% of an organic carrier, wherein the silver powder is composed of micron silver powder and nano silver powder. The micro-silver powder is subjected to surface modification, and silver nano-clusters are formed on the surfaces. The characteristics of low-temperature sintering of the nano-clusters are utilized, the sintering of the nano-particles and the connection of the micron-silver powder are promoted, and the low-temperature sintering compactness of the conductive silver paste is improved. The bonding and interconnection of a chip and a metal layer on the surface of a substrate are realized. The conductive silver paste prepared by the preparation method disclosed by the invention has the characteristics of high temperature resistance, high heat conductivity and high bonding property, and the reliability of the packaging device can be remarkably improved. The pressureless sintered conductive silver paste and the preparation method thereof are suitable for bonding and heat dissipation of a third-generation wide-gap semiconductor chip.

Description

Technical field [0001] The invention relates to a pressureless sintered conductive silver paste and a preparation method thereof. Background technique [0002] Compared with the first and second-generation semiconductor materials, the third-generation semiconductors represented by silicon carbide have a wider band gap, higher breakdown voltage, higher thermal conductivity, higher electron saturation and more High radiation resistance. These characteristics enable the third-generation semiconductors to withstand higher power densities, but this also poses higher challenges to their packaging. The interconnect material between the chip and the substrate, as the closest material to the chip, is extremely important for the performance of the chip. Impact. [0003] The traditional interconnecting materials of chips and substrates—alloy solders and conductive adhesives—are difficult to meet the demand due to fatal defects. Alloy solder has the disadvantage of low reliability at high t...

Claims

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Application Information

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IPC IPC(8): H01B1/22H01B13/00H01L23/488
Inventor 孙蓉张保坦李金泽朱朋莉
Owner SHENZHEN INST OF ADVANCED TECH
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