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A kind of high fluorescence intensity silicon doped carbon quantum dots and its photochemical synthesis method and application

A technology of photochemical synthesis and carbon quantum dots, which is applied in the field of carbon nanometers, can solve the problems of weakened fluorescence intensity, unstable fluorescence, and low quantum efficiency, and achieve high fluorescence intensity, high fluorescence intensity, and good photostability

Active Publication Date: 2021-02-23
NORTHEAST FORESTRY UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the above method not only requires harsh preparation conditions, such as strong acid, strong oxidizing agent, ice bath or high temperature and high pressure, etc., but also the prepared CQDs show low yield and low quantum efficiency, and the fluorescence intensity of the prepared carbon quantum dots Attenuation occurs after long-term storage or high-power UV exposure, i.e., fluorescence instability

Method used

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  • A kind of high fluorescence intensity silicon doped carbon quantum dots and its photochemical synthesis method and application
  • A kind of high fluorescence intensity silicon doped carbon quantum dots and its photochemical synthesis method and application
  • A kind of high fluorescence intensity silicon doped carbon quantum dots and its photochemical synthesis method and application

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Embodiment 1

[0042] A photochemical synthesis method of silicon-doped carbon quantum dots with high fluorescence intensity, the steps of the photochemical synthesis method are as follows:

[0043] S1: Prepare N-phenyl-p-phenylenediamine and 3-aminopropyltrimethoxysilane (C 6 h 17 NO 3 Si), N-phenyl-p-phenylenediamine is added into distilled water as a carbon source, after ultrasonic treatment to make it uniformly dispersed, 3-aminopropyltrimethoxysilane is added dropwise to the system as a silicon source, and the mixture system fully stir;

[0044] S2: Infuse nitrogen gas into the above system to remove dissolved oxygen, then transfer the system to a photochemical reactor, and perform photochemical reaction under xenon lamp irradiation and continuous stirring;

[0045] S3: After the photochemical reaction is completed, cool naturally to below 30°C, centrifuge the system, collect the supernatant and perform ultrafiltration on it, and collect the filtrate to obtain silicon-doped carbon qu...

Embodiment 2

[0047] A photochemical synthesis method of silicon-doped carbon quantum dots with high fluorescence intensity, the steps of the photochemical synthesis method are as follows:

[0048] S1: Prepare N-phenyl-p-phenylenediamine and 3-aminopropyltrimethoxysilane according to the molar ratio of 3.1:1, add N-phenyl-p-phenylenediamine as a carbon source into distilled water, and disperse it by ultrasonic treatment After uniformity, 3-aminopropyltrimethoxysilane is added dropwise into the system as a silicon source, and the mixture system is fully stirred;

[0049] S2: Infuse nitrogen gas into the above system to remove dissolved oxygen, then transfer the system to a photochemical reactor, and perform a photochemical reaction under 450W ultraviolet xenon lamp irradiation and continuous stirring for 1 to 5 hours;

[0050] S3: After the photochemical reaction, cool naturally to below 30°C, centrifuge the system at 8000rpm for 15min, collect the supernatant and perform ultrafiltration wit...

Embodiment 3

[0052] S1: Add 0.5g of N-phenyl-p-phenylenediamine as a carbon source to 90mL of distilled water, and after ultrasonic treatment for 5min to disperse N-phenyl-p-phenylenediamine evenly, add 10mL of 3-aminopropyl Trimethoxysilane was slowly added dropwise into the system as a silicon source, and the mixture was fully stirred for 5 minutes;

[0053] S2: Introduce nitrogen into the above system to remove dissolved oxygen, then transfer the system to a photochemical reactor, and perform a photochemical reaction under 450W ultraviolet xenon lamp irradiation and continuous stirring. The xenon lamp irradiation provides light and heat, and as the reaction time progresses , the color of the system solution gradually changed to dark brown, which indicated that silicon-doped carbon quantum dots (Si-CQDs) had been formed;

[0054] S3: After 5 hours of irradiation, the photochemical reaction ends, the reaction system is naturally cooled to below 30°C, and the system is centrifuged at 8000r...

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Abstract

The invention belongs to the field of carbon nanotechnology, and in particular relates to a silicon-doped carbon quantum dot with high fluorescence intensity and a photochemical synthesis method and application thereof. The invention uses N-phenyl-p-phenylenediamine as a carbon source and 3-aminopropyltrimethoxysilane as a silicon source to prepare silicon-doped carbon quantum dots with high fluorescence intensity through a simple photochemical synthesis method. The silicon-doped carbon quantum dots with high fluorescence intensity prepared by the present invention have a regular structure, a spherical shape with a diameter of 4.5-8.5nm, and the surface is rich in Si atoms; they have high crystallinity and a lattice parameter of 0.21nm; they are bright blue. Green fluorescence. The silicon-doped carbon quantum dots prepared by the present invention have the advantages of simple photochemical synthesis method, high fluorescence intensity, high optical stability during long-term storage and high-power ultraviolet irradiation, non-toxicity or low toxicity, and are widely used in optoelectronic devices. , Fluorescence sensing and cell biological imaging and other fields have great application potential.

Description

technical field [0001] The invention belongs to the field of carbon nanotechnology, and in particular relates to a silicon-doped carbon quantum dot with high fluorescence intensity and a photochemical synthesis method and application thereof. Background technique [0002] In the past decade, carbon nanotechnology has developed into one of the most important branches of nanoscience, promoting carbon-related basic research and practical applications. As an emerging star in the family of carbon nanomaterials, carbon quantum dots (CQDs) have received great attention due to their unique advantages, including low toxicity, chemical inertness, and good performance compared with traditional organic dyes and inorganic semiconductor quantum dots, etc. biocompatibility. Meanwhile, as the most abundant element in the earth's crust, carbon ensures the feasibility of large-scale production of carbon nanomaterials in a simple and low-cost manner. Carbon quantum dots have a variety of app...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/65G01N21/64H01L33/50B82Y20/00B82Y40/00B82Y30/00
CPCB82Y20/00B82Y30/00B82Y40/00C09K11/65G01N21/64H01L33/504
Inventor 王丽丽张灿富季亚莉张慧敏黄敏全芷谊
Owner NORTHEAST FORESTRY UNIVERSITY