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A kind of heterojunction photovoltaic cell and its preparation method

A photovoltaic cell and heterojunction technology, which is applied in photovoltaic power generation, circuits, electrical components, etc., can solve the problems of reducing the photoelectric conversion efficiency of organic and inorganic solar cells, the inability to carry out large-scale applications, and the long time of methylation treatment. , to achieve the effect of improving the photoelectric conversion efficiency, increasing the contact increase, and the method is simple and easy

Active Publication Date: 2020-09-08
诸暨市冬之宝针织有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In the preparation process of organic-inorganic hybrid solar cells, the defect states on the surface of the silicon substrate lead to electron-hole recombination, thereby greatly reducing the photoelectric conversion efficiency of organic-inorganic solar cells. In the prior art, in order to reduce the defect states on the surface of the silicon substrate, usually Methylation is used to form Si-CH3 bonds on the surface of silicon wafers to passivate the silicon surface. On the one hand, there are still a large number of defect states in silicon wafers treated with methylation. On the other hand, the process of methylation treatment is relatively complicated and The basic treatment takes a long time and cannot be applied on a large scale

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  • A kind of heterojunction photovoltaic cell and its preparation method
  • A kind of heterojunction photovoltaic cell and its preparation method

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preparation example Construction

[0018] A method for preparing a heterojunction photovoltaic cell proposed in a specific embodiment of the present invention includes the following steps:

[0019] (1) Cleaning of n-type silicon wafers: ultrasonically clean n-type silicon wafers in acetone, ethanol, and deionized water for 10-15 minutes, and then place them in concentrated H 2 SO 4 / H 2 o 2 mixed solution and heated to 100-110°C for 50-70 minutes, the concentrated H 2 SO 4 / H 2 o 2 H in the mixed solution 2 SO 4 with H 2 o 2 The volume ratio is 3:1, then rinse the n-type silicon wafer with deionized water, and dry it with nitrogen for standby;

[0020] (2) Prepare a pyramid-structured textured layer on the upper surface of the n-type silicon wafer: place the n-type silicon wafer obtained in step 1 in a mixed solution of NaOH and ethanol, wherein in the mixed solution, the The mass fraction of NaOH is 4-5%, the volume fraction of the ethanol is 12-15%, etch at 80-90°C for 40-50 minutes to obtain the p...

Embodiment 1

[0029] A method for preparing a heterojunction photovoltaic cell, comprising the following steps:

[0030] (1) Cleaning of n-type silicon wafers: ultrasonically clean n-type silicon wafers in acetone, ethanol, and deionized water for 12 minutes, and then place them in concentrated H 2 SO 4 / H 2 o 2 mixed solution and heated to 105°C for 60 minutes, the concentrated H 2 SO 4 / H 2 o 2 H in the mixed solution 2 SO 4 with H 2 o 2 The volume ratio is 3:1, then rinse the n-type silicon wafer with deionized water, and dry it with nitrogen for standby;

[0031] (2) Prepare a pyramid-structured textured layer on the upper surface of the n-type silicon wafer: place the n-type silicon wafer obtained in step 1 in a mixed solution of NaOH and ethanol, wherein in the mixed solution, the The mass fraction of NaOH is 4.5%, the volume fraction of the ethanol is 12%, etch at 90°C for 45 minutes to obtain the pyramid structure texture layer, and then place the n-type silicon wafer in ...

Embodiment 2

[0040] A method for preparing a heterojunction photovoltaic cell, comprising the following steps:

[0041] (1) Cleaning of n-type silicon wafers: ultrasonically clean n-type silicon wafers in acetone, ethanol, and deionized water for 15 minutes, and then place them in concentrated H 2 SO 4 / H 2 o 2 mixed solution and heated to 110°C for 50 minutes, the concentrated H 2 SO 4 / H 2 o 2 H in the mixed solution 2 SO 4 with H 2 o 2 The volume ratio is 3:1, then rinse the n-type silicon wafer with deionized water, and dry it with nitrogen for standby;

[0042] (2) Prepare a pyramid-structured textured layer on the upper surface of the n-type silicon wafer: place the n-type silicon wafer obtained in step 1 in a mixed solution of NaOH and ethanol, wherein in the mixed solution, the The mass fraction of NaOH is 4%, the volume fraction of the ethanol is 15%, etch at 85°C for 50 minutes to obtain the pyramid structure texture layer, and then place the n-type silicon wafer in hy...

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Abstract

The invention provides a heterojunction photovoltaic cell and a preparation method thereof. The preparation method of the heterojunction photovoltaic cell comprises: cleaning an n-type silicon wafer, and preparing a pyramid-structured fleece on the upper surface of the n-type silicon wafer. Surface layer, preparation of silicon nanowires on the surface of the pyramid structure in the pyramid structure suede layer, passivation treatment of the n-type silicon chip, preparation of molybdenum selenide nanoparticles / Spiro-OMeTAD layer, PEDOT : the preparation of the PSS layer, the preparation of the front silver grid electrode and the preparation of the back aluminum electrode, wherein in the process of carrying out passivation treatment to the n-type silicon wafer, select spin coating containing a mixed solution of potassium hydroxide and aluminum triethoxide, An annealing treatment is also performed to effectively reduce the defect states on the surface of the silicon substrate and improve the photoelectric conversion efficiency of the corresponding heterojunction photovoltaic cell.

Description

technical field [0001] The invention relates to the technical field of photoelectric conversion, in particular to a heterojunction photovoltaic cell and a preparation method thereof. Background technique [0002] Throughout the hundred years of solar cell development, various solar cells have emerged. In terms of the development time of solar cells, solar cells can be divided into three categories: the first generation of solar cells specifically includes monocrystalline silicon solar cells. Silicon solar cells such as batteries, polycrystalline silicon solar cells, and amorphous silicon solar cells; second-generation solar cells specifically include amorphous silicon thin-film solar cells, gallium arsenide solar cells, cadmium telluride solar cells, and copper indium gallium selenide solar cells, etc. Thin-film solar cells; the third-generation solar cells specifically include dye-sensitized solar cells and nanocrystalline solar cells. New solar cells such as organic solar...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/48H01L51/44
CPCH10K30/87H10K30/50Y02E10/549
Inventor 郑伟
Owner 诸暨市冬之宝针织有限公司