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Helical structure block copolymer semiconductor nanowire preparation method and use thereof

A block copolymer, helical structure technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, nanotechnology for materials and surface science, etc. and other problems, to achieve the effect of good repeatability, low requirements for equipment and process conditions, and low detection limit

Active Publication Date: 2021-11-12
HEFEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The helical structure of the polymer is mainly a special supramolecular structure formed by the self-assembly of the polymer chain induced by the π-π interaction generated by the electrons in the molecule. This structure has a wide range of applications in optical and biological detection. , however, there is no application in gas sensing
[0005] The currently known organic field effect transistors based on block copolymer semiconductor nanowires have not been reported for gas sensing. In addition, the regulation of block copolymer morphology usually requires changing the molecular weight or block ratio of the copolymer. It is difficult to adjust the molecular chain from the polymerization level, and there is no report on the regulation of the morphology (density, diameter) of nanowires only through the preparation conditions of nanowires.

Method used

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  • Helical structure block copolymer semiconductor nanowire preparation method and use thereof
  • Helical structure block copolymer semiconductor nanowire preparation method and use thereof
  • Helical structure block copolymer semiconductor nanowire preparation method and use thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0037] The present embodiment prepares PPI (-DMAENBA)-b-P3HT nanowire and organic field effect transistor sensor based on it as follows:

[0038] (1) PPI(-DMAENBA)-b-P3HT is dissolved in o-dichlorobenzene to form a solution A with a concentration of 2mg / mL, and PMMA is dissolved in chlorobenzene to form a solution B with a concentration of 130mg / mL; Mix well with solution B to form a blend solution, in which the mass ratio of PPI(-DMAENBA)-b-P3HT to PMMA is 1:80, or 1:60, or 1:40. The molecular structural formulas of PPI(-DMAENBA)-b-P3HT and PPI-b-P3HT are as follows figure 1 shown.

[0039](2) The n-type silicon wafer is cleaned as the substrate after being heated in the concentrated sulfuric acid-hydrogen peroxide mixed solution; by the spin coating method, the blended solution is spin-coated on the substrate at a speed of 2000rpm and vacuum-dried at room temperature for 12 hours, thereby On the substrate, a double-layer film with PMMA film as the bottom layer and PPI(-DMA...

Embodiment 2

[0048] In this example, helical structure nanowires and organic field effect transistor sensors based on them were prepared by the same method as in Example 1, the only difference being that PPI(-DMAENBA)-b-P3HT was replaced with PPI-b-P3HT. The properties of the obtained helical nanowires and sensors are similar to those of Example 1.

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Abstract

The invention discloses a method for preparing a helical structure block copolymer semiconductor nanowire and its application. The block copolymer semiconductor material and the polymer insulation material are respectively dissolved in a solvent and then mixed to form a blend solution. By controlling the block The mass ratio of the copolymer semiconductor material and the polymer insulating material can obtain block copolymer semiconductor nanowires with different densities and diameters of helical structures. The block copolymer semiconductor nanowire of the present invention can be used as the semiconductor layer of an organic field-effect transistor ammonia sensor, which can improve the sensitivity of ammonia sensing and reduce the detection limit, and the nanowire can be changed only by changing the preparation process conditions. density and diameter. The present invention firstly prepares the block copolymer semiconductor nanowire with helical structure through the blending method, applies it to ammonia sensing and obtains higher sensing performance.

Description

technical field [0001] The invention relates to the field of organic semiconductor nanostructures and devices, in particular to a method for preparing a helical structure block copolymer semiconductor nanowire and its application. Background technique [0002] As an important chemical raw material, ammonia (NH3) is widely used in industrial production, food storage, safety requirements and other fields. Due to the strong toxicity of ammonia gas, when the human body is exposed to a low-concentration ammonia environment, it can produce poisoning symptoms such as edema in the respiratory tract and gastric mucosa. Therefore, it is very important to prepare an ammonia sensor with high sensitivity, low detection limit and stable performance. [0003] Conjugated polymer organic field-effect transistors have received extensive attention and research in recent years due to their potential advantages such as large-area solution processing, flexible devices, and low cost. The organic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/05H01L51/30H01L51/40G01N27/414B82Y40/00B82Y30/00
CPCG01N27/4141B82Y30/00B82Y40/00H10K71/12H10K85/151H10K10/462
Inventor 邱龙臻魏诗语田丰收王晓鸿陆红波
Owner HEFEI UNIV OF TECH
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