Patterning method of ITO (indium tin oxide) film

A patterning and thin-film technology, applied in chemical instruments and methods, electrical components, circuits, etc., can solve the problems of batch etching, low etching efficiency, flammable zinc powder, etc., and achieve stable and reliable reaction rate, high etching The effect of eclipse selection ratio and high selection ratio

Inactive Publication Date: 2018-09-11
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Dry etching requires etching equipment (vacuum plasma system), and the plasma in dry etching will cause ion damage to the material layer below the ITO, and most dry etching equipment is processed by a single piece of manipulator transmission. Therefore, there are high requirements for the strength and rigidity of the substrate, and it cannot be etched in batches, and the etching efficiency is low
[0004] In the existing wet etching process of ITO, a s

Method used

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  • Patterning method of ITO (indium tin oxide) film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0059] The corrosion solution and volume ratio used are as follows:

[0060] h 3 PO 4 : 80±10%;

[0061] CH 3 COOH: 10±10%;

[0062] HNO 3 : 10±10%;

[0063] h 2 O: 50%.

[0064] The temperature of the etching solution is 60°C,

[0065] Corrosion time is 4 minutes;

[0066] The experimental results are: etching line width loss 50:1, selectivity ratio to quartz>10000:1, selectivity ratio to Ti and TiN>1000:1.

Embodiment 2

[0068] The corrosion solution and volume ratio used are as follows:

[0069] h 3 PO 4 : 80±10%;

[0070] CH 3 COOH: 10±10%;

[0071] HNO 3 : 10±10%;

[0072] h 2 O: 50%.

[0073] The temperature of the etching solution is 20°C,

[0074] The corrosion time is 8 minutes;

[0075] The experimental results are: etching line width loss 100:1, selectivity ratio to quartz>10000:1, selectivity ratio to Ti and TiN>10000:1.

[0076] The above are the specific implementation manners of the present application.

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Abstract

The present application discloses a patterning method of an ITO (indium tin oxide) film. A patterned mask layer is formed on the ITO film. The method includes the following steps that: an ITO film notcovered by a mask layer is removed by means of a wet etching method; and the mask layer is removed, so that a patterned ITO film is obtained. According to the wet etching method, a wet etching solution is a mixed solution composed of oxidizing acid, medium-strength acid and weak acid, and the temperature of the solution is controlled to range from 20 and 60 DEG C; the oxidizing acid and the medium-strength acid can both oxidize ITO, the weak acid is the corrosion inhibitor of the mixed solution, and therefore, the pH value of the mixed solution can be maintained, and a reaction rate can be stable and reliable; and the oxidizing acid, the medium-strength acid and the weak acid have a high etching selection ratio for the mask layer and a substrate, so that the quality of an ITO pattern canbe improved. With the wet etching method adopted, the high selection ratio of the etching solution can be achieved with safety and stability ensured, and the high-quality ITO pattern can be obtained.

Description

technical field [0001] The present application relates to the technical field of semiconductor device processing technology, in particular to a method for patterning ITO thin films. Background technique [0002] Indium tin oxide (ITO) is a transparent conductive oxide semiconductor material with stable chemical properties, excellent light transmission and good electrical conductivity. It is used as an anti-reflection layer and transparent electrode in solar cells, flat panel displays, anti-frost Architectural windows, aerospace fields have been widely used. [0003] The patterning of ITO is generally realized by photolithography plus etching, and the etching of ITO is generally divided into dry etching and wet etching. Dry etching requires etching equipment (vacuum plasma system), and the plasma in dry etching will cause ion damage to the material layer below the ITO, and most dry etching equipment is processed by a single piece of manipulator transmission. Therefore, ther...

Claims

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Application Information

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IPC IPC(8): H01L21/3213C09K13/06
CPCC09K13/06H01L21/32134H01L21/32139
Inventor 李俊杰胡艳鹏崔虎山杨涛李俊峰
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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