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A kind of thin film transistor using zinc tin aluminum potassium oxide as channel layer and preparation method thereof

A thin-film transistor, zinc-tin-aluminum-potassium technology, which is applied in the field of thin-film transistors using zinc-tin-aluminum-potassium oxide as a channel layer and the field of preparation thereof, can solve the problem of reducing electron mobility, reducing off-state current of TFT, and being difficult to control. and other problems, to achieve the effect of low energy consumption and low cost preparation

Active Publication Date: 2020-10-09
GUIZHOU MINZU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, studies have shown that the electron mobility of ZTO materials will also be reduced with the increase of the content of the above-mentioned doping elements, resulting in a sharp decrease in the saturation mobility of TFT; +3 valence to +6 valence), it is difficult to precisely control the carrier concentration of the ZTO material by changing the content of high-valence doping elements, so that the doping of high-valence elements can reduce the off-state current of the TFT while reducing the on-state current of the device. is also significantly reduced, resulting in a lower switching ratio for the TFT

Method used

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  • A kind of thin film transistor using zinc tin aluminum potassium oxide as channel layer and preparation method thereof
  • A kind of thin film transistor using zinc tin aluminum potassium oxide as channel layer and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0030] A thin-film transistor with zinc-tin-aluminum-potassium oxide as the channel layer, using glass as the substrate, zinc-tin-aluminum-potassium oxide film as the channel layer, organic PVP film as the insulating layer, aluminum film as the source electrode, The drain electrode and the gate electrode are used to prepare a TFT with a top-gate coplanar structure, which is prepared by the following method:

[0031] (1) Analytical pure Zn(C 2 h 3 o 2 ) 2 ·5H 2 O, SnCl 2 2H 2 O, AlCl 3 ·6H 2 O and KCl·3H 2 O was dissolved in ethylene glycol, with ethanolamine as a stabilizer, stirred at 70°C for 30 hours to form a transparent precursor solution, wherein the concentration of the precursor solution was 0.2M, Zn(C 2 h 3 o 2 ) 2 ·5H 2 O, SnCl 2 2H 2 O, AlCl 3 ·6H 2 O and KCl 3H 2 The molar ratio of zinc ions, tin ions, aluminum ions, and potassium ions in O is 1:2:0.07:0.1, and the volume ratio of ethanolamine to ethylene glycol is 0.2:100;

[0032] (2) After agi...

Embodiment 2

[0038] A thin-film transistor with zinc-tin-aluminum-potassium oxide as the channel layer, using glass as the substrate, zinc-tin-aluminum-potassium oxide film as the channel layer, organic PVP film as the insulating layer, aluminum film as the source electrode, The drain electrode and the gate electrode are used to prepare a TFT with a top-gate coplanar structure, which is prepared by the following method:

[0039] (1) Analytical pure Zn(C 2 h 3 o 2 ) 2 ·5H 2 O, SnCl 2 2H 2 O, AlCl 3 ·6H 2 O and KCl·3H 2 O was dissolved in ethylene glycol, with ethanolamine as a stabilizer, stirred at 50°C for 24 hours to form a transparent precursor solution, wherein the concentration of the precursor solution was 0.35M, Zn(C 2 h 3 o 2 ) 2 ·5H 2 O, SnCl 2 2H 2 O, AlCl 3 ·6H 2 O and KCl 3H 2 The molar ratio of zinc ions, tin ions, aluminum ions, and potassium ions in O is 1:2:0.07:0.1, and the volume ratio of ethanolamine to ethylene glycol is 0.1:100;

[0040] (2) After ag...

Embodiment 3

[0046] A thin-film transistor with zinc-tin-aluminum-potassium oxide as the channel layer, using glass as the substrate, zinc-tin-aluminum-potassium oxide film as the channel layer, organic PVP film as the insulating layer, aluminum film as the source electrode, The drain electrode and the gate electrode are used to prepare a TFT with a top-gate coplanar structure, which is prepared by the following method:

[0047] (1) Analytical pure Zn(C 2 h 3 o 2 ) 2 ·5H 2 O, SnCl 2 2H 2 O, AlCl 3 ·6H 2 O and KCl·3H 2 O was dissolved in ethylene glycol, with ethanolamine as a stabilizer, stirred at 80°C for 48 hours to form a transparent precursor solution, wherein the concentration of the precursor solution was 0.6M, Zn(C 2 h 3 o 2 ) 2 ·5H 2 O, SnCl 2 2H 2 O, AlCl 3 ·6H 2 O and KCl 3H 2 The molar ratio of zinc ions, tin ions, aluminum ions, and potassium ions in O is 1:2:0.07:0.1, and the volume ratio of ethanolamine to ethylene glycol is 1:100;

[0048] (2) After aging...

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Abstract

The invention relates to the technical field of thin film transistors, in particular to a thin film transistor (TFT) with zinc tin aluminum potassium oxide as a channel layer and a preparation methodthereof. By using a zinc tin aluminum potassium oxide material as a channel layer, using an organic polytetraethylene phenol (PVP) material as an insulating layer, and using aluminum as a source, a drain and a gate, a TFT with top gate coplanar structure is prepared on a common glass substrate. In the present invention, both the channel layer and a dielectric layer are prepared by the dip-coatingprocess of a sol-gel method, and the source, the drain, and the gate are prepared by vacuum thermal evaporation. Finally, a zinc tin aluminum potassium oxide TFT is obtained having a high saturation mobility of 62.3cm2 / Vs, a low subthreshold swing of 0.09V / decade, a threshold voltage of 0.23V close to zero, a low off-state current (10<-9>A), a low leakage current (10<-10>A), and an on-off ratio greater than 106, and operating in an enhanced mode. The method provides a feasible plan for preparing a high-performance and low-power oxide thin film transistor at low cost.

Description

technical field [0001] The invention relates to the technical field of thin-film transistors, in particular to a thin-film transistor with zinc-tin-aluminum-potassium oxide as a channel layer and a preparation method thereof. Background technique [0002] Thin-film transistor (TFT) is the core element in active matrix organic light-emitting diode display (Active Matrix Origanic Light-Emitting Diode, AMOLED) technology, which includes substrate, channel layer, insulating layer, gate, source and drain, etc. an important component. At present, the oxide TFT based on transparent amorphous oxide semiconductor (TAOS) thin film as the channel layer has become the most promising new generation TFT technology for AMOLED due to its high mobility, good transparency of visible light and excellent uniformity. . [0003] Among oxide TFTs, some substantial progress has been made in the research of channel layer TFTs based on indium gallium zinc oxide (In-Ga-Zn-O, IGZO) materials. With t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L21/443H01L21/34H01L29/24H01L29/417H01L29/43H01L29/51H01L29/786
CPCH01L21/02565H01L21/02628H01L21/443H01L29/24H01L29/41733H01L29/43H01L29/51H01L29/66969H01L29/7869
Inventor 岳兰孟繁新任达森
Owner GUIZHOU MINZU UNIV