Ternary polymer solar cell
A technology of solar cells and ternary polymers, applied in circuits, photovoltaic power generation, electrical components, etc., to achieve the effects of improving photoelectric conversion performance, inhibiting bimolecular charge recombination, and improving phase separation
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Embodiment 1
[0046] Control group:
[0047] Clean the substrate composed of transparent substrate layer and transparent conductive cathode ITO with surface roughness less than 1nm, and blow dry with nitrogen after cleaning; spin-coat ZnO (4500rpm, 40s, 25nm) on the surface of transparent conductive cathode ITO to prepare cathode buffer layer, and the formed film was thermally annealed (200°C, 60min); the PTB7-Th:N2200 photoactive layer (2000rpm, 60s, 95nm) was prepared by spin coating on the cathode buffer layer, and the mass ratio was 1:1; Evaporation of MoO on the surface of the photoactive layer 3 (8nm); metal anode Ag (80nm) was vapor-deposited on the anode buffer layer. Under standard test conditions (AM1.5, 100mW / cm 2 ), the measured open circuit voltage of the device (V OC )=0.80V, short-circuit current (J SC )=11.2mA / cm 2 , fill factor (FF) = 0.45, photoelectric conversion efficiency (PCE) = 4.01%.
Embodiment 2
[0049] Clean the substrate composed of transparent substrate layer and transparent conductive cathode ITO with surface roughness less than 1nm, and blow dry with nitrogen after cleaning; spin-coat ZnO (4500rpm, 40s, 25nm) on the surface of transparent conductive cathode ITO to prepare cathode buffer layer, and the formed film was thermally annealed (200°C, 60min); the PTB7-Th:N2200:2PDINB photoactive layer (2000rpm, 60s, 95nm) was prepared by spin coating on the cathode buffer layer, and the mass ratio was 1:1 :0.1; evaporate MoO on the surface of the photoactive layer 3 (8nm); metal anode Ag (80nm) was vapor-deposited on the anode buffer layer. Under standard test conditions (AM 1.5, 100mW / cm 2 ), the measured open circuit voltage of the device (V OC )=0.80V, short-circuit current (J SC )=11.5mA / cm 2 , fill factor (FF) = 0.45, photoelectric conversion efficiency (PCE) = 4.07%.
Embodiment 3
[0051] Clean the substrate composed of transparent substrate layer and transparent conductive cathode ITO with surface roughness less than 1nm, and blow dry with nitrogen after cleaning; spin-coat ZnO (4500rpm, 40s, 25nm) on the surface of transparent conductive cathode ITO to prepare cathode buffer layer, and the formed film was thermally annealed (200°C, 60min); the PTB7-Th:N2200:2PDINB photoactive layer (2000rpm, 60s, 95nm) was prepared by spin coating on the cathode buffer layer, and the mass ratio was 1:1 :0.2; evaporate MoO on the surface of the photoactive layer 3 (8nm); metal anode Ag (80nm) was vapor-deposited on the anode buffer layer. Under standard test conditions (AM 1.5, 100mW / cm 2 ), the measured open circuit voltage of the device (V OC )=0.82V, short-circuit current (J SC )=12.1mA / cm 2 , fill factor (FF) = 0.45, photoelectric conversion efficiency (PCE) = 4.52%.
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