Self-supporting germanium film with mass thickness ranging from 700 to 1400 mu g/cm<2> and its preparation method thereof

A quality thickness, germanium thin film technology, applied in ion implantation plating, metal material coating process, coating, etc., can solve the problems of Ir deposition layer cracks, target film curl, poor flatness, etc.

Active Publication Date: 2019-01-04
泰安泰山科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Chinese patent CN106868460A uses the focused heavy ion sputtering method to prepare a self-supporting Ir target with a mass thickness of 400-2000 μg / cm2, which solves the technical problems of curling and poor flatness of the target film in the prior art preparation process
However, due to the large residual stress between the Ir deposition layer and the copper base during the sputtering process, releasing the stress during dissolution and separation will cause cracks in the Ir deposition layer, which will affect the use of the self-supporting target.
In addition, the preparation steps of this invention are complicated. When depositing the Ir deposition layer, two steps are used. It is necessary to take the Ir deposition layer out of the focused heavy ion sputtering deposition system and put it into the deposition system again.

Method used

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  • Self-supporting germanium film with mass thickness ranging from 700 to 1400 mu g/cm&lt;2&gt; and its preparation method thereof
  • Self-supporting germanium film with mass thickness ranging from 700 to 1400 mu g/cm&lt;2&gt; and its preparation method thereof
  • Self-supporting germanium film with mass thickness ranging from 700 to 1400 mu g/cm&lt;2&gt; and its preparation method thereof

Examples

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Embodiment 1

[0044] A mass thickness of 900μg / cm 2 The preparation method of self-supporting germanium thin film, comprises the following steps: select the glass of 2cm * 2cm * 0.5cm as substrate 1, adopt resistance wire thermal evaporation method to deposit sodium chloride release agent 2, described sodium chloride release agent 2 Thickness 250nm;

[0045] The glass substrate 1 is placed on the workpiece table 9, the alumina target is used as the 90-degree FCVA cathode 5, and the germanium target is used as the straight tube FCVA cathode 13, and the deposition device is evacuated through the vacuum port 8, so that the inside of the reaction chamber 12 Vacuum degree is 1.1×10 -4 Pa; then argon gas is introduced from the air inlet 11, so that the vacuum degree in the reaction chamber 12 is 1.1Pa; the 90-degree magnetic filter cathodic vacuum arc (FCVA) system is turned on and the deposition parameters are set: the arc starting current is 40A, and the elbow The magnetic field is 2.7A, the ...

Embodiment 2

[0050] A mass thickness of 1300μg / cm 2 The preparation method of the self-supporting germanium thin film comprises the following steps: select 2cm×2cm×0.5cm single crystal silicon as the substrate 1, adopt the resistance wire thermal evaporation method to deposit the sodium chloride release agent 2, and the sodium chloride release agent The thickness of the agent 2 is 140nm; the single crystal silicon substrate 1 is placed on the workpiece table 9, the alumina target is used as the 90-degree FCVA cathode 5, and the germanium target is used as the straight tube FCVA cathode 13, and the deposition device is pumped through the vacuum port 8. Vacuum, so that the degree of vacuum in the reaction chamber 12 is 1.5 × 10 -4Pa; then argon gas is introduced from the air inlet 11, so that the vacuum degree in the reaction chamber 12 is 1.2Pa; the 90-degree magnetic filter cathodic vacuum arc (FCVA) system is turned on and the deposition parameters are set as follows: the arc starting cur...

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Abstract

The invention discloses a self-supporting germanium film with mass thickness ranging from 600 to 1200 mu g / cm<2> and its preparation method thereof. The preparation method includes the steps of (1), depositing a sodium chloride release agent on the surface of a substrate; (2), depositing a zinc oxide buffer film on the surface of the substrate through a 90-degree magnetron filtered cathode vacuumarc (FCVA) system; (3), turning a sample 180 DEG, depositing the indium film again through a straight magnetron FCVA system; (4), subjecting the treated substrate to stripping in a container containing ethanol solution; (5), picking the germanium film through a fishing plate to obtain the self-supporting germanium film with mass thickness ranging from 700 to 1400 mu g / cm<2>. The self-supporting germanium film with mass thickness ranging from 700 to 1400 mu g / cm<2> has low stress, is uniform and compact, and the preparation method is simple.

Description

technical field [0001] The invention relates to the field of film preparation, in particular to a film with a mass thickness of 700-1400 μg / cm 2 Self-supporting germanium thin film and its preparation method. Background technique [0002] A self-supporting film, as opposed to a film with a substrate, refers to a film that is not supported by a substrate during use. The commonly used self-supporting film preparation technology is to coat or grow a soluble release agent on a solid polished surface (such as a polished silicon wafer or glass sheet), deposit a film, and then dissolve the release agent. [0003] In addition to being self-supporting, the self-supporting film is also required to have the characteristics of no defect, uniform flatness, purity, large area, and low stress. Chinese patent CN106868460A adopts the focused heavy ion sputtering method to prepare a self-supporting Ir target with a mass thickness of 400-2000 μg / cm2, which solves the technical problems of cu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/02C23C14/06C23C14/32
CPCC23C14/0005C23C14/024C23C14/06C23C14/325
Inventor 欧志清
Owner 泰安泰山科技有限公司
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