A method for reducing the ohmic contact resistance of a wide band gap semiconductor device
A wide bandgap semiconductor and ohmic contact electrode technology, which is applied in the field of reducing the ohmic contact resistance of III-V wide bandgap semiconductor devices, can solve problems greater than 0.5Ω, etc., to reduce ohmic contact resistance, increase ohmic contact area, enhance The effect of device performance
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Embodiment 1
[0057] Step 1, depositing a passivation layer, the material is Si 3 N 4
[0058] Deposit a layer of 100nm Si on the surface of wide band gap semiconductor material by PECVD (plasma enhanced chemical vapor deposition) 3 N 4 passivation layer;
[0059] Step 2, apply photoresist, and photolithographic development to remove the photoresist in the ohmic contact electrode area
[0060] Coat photoresist AZ5214E on the passivation layer deposited in step 1, pre-bake at 90°C for 90s, expose to ultraviolet light for 6s, develop with 2.38% tetramethylammonium hydroxide solution for 45s, and remove the photoresist in the ohmic contact electrode area glue to form a photoresist window, and post-bake at 110°C for 30s;
[0061] Step 3, etch the passivation layer, remove the passivation layer in the ohmic contact electrode area, and remove the photoresist
[0062] The passivation layer is etched by RIE (Reactive Ion Etching), and the working gas is CF 4 with O 2 , RF power 100W, time...
Embodiment 2
[0076] Step 1, depositing a passivation layer, the material is SiO 2
[0077] Using ICPCVD (inductively coupled plasma chemical vapor deposition) to deposit a layer of 50nm SiO on the surface of wide bandgap semiconductor materials 2 passivation layer;
[0078] Step 2, apply photoresist, and photolithographic development to remove the photoresist in the ohmic contact electrode area
[0079] Coat photoresist AZ5214E on the passivation layer deposited in step 1, pre-bake at 90°C for 90s, expose to ultraviolet light for 6s, develop with 2.38% tetramethylammonium hydroxide solution for 45s, and remove the photoresist in the ohmic contact electrode area glue to form a photoresist window, and post-bake at 110°C for 30s;
[0080] Step 3, etch the passivation layer, remove the passivation layer in the ohmic contact electrode area, and remove the photoresist
[0081] ICPRIE (Inductively Coupled Plasma Etching) is used to etch the passivation layer, and the working gas is SF 6 wi...
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