Graphite phase carbon nitride foam composite cuprous oxide quantum dot photocatalytic material and preparation method thereof

Abstract

The invention relates to a graphite phase carbon nitride foam composite cuprous oxide quantum dot photocatalytic material and a preparation method thereof. The technical scheme is: dissolve 10-15 parts by mass of anhydrous methanol and 10-15 parts by mass of hydrogen peroxide solution in 100 parts by mass of CuSO 4 solution, stir, and then add 0.1 to 0.5 parts by mass of g‑C 3 N 4 Foam, stir; then react in a nitrogen atmosphere and 300W mercury lamp for 1-5h, filter, wash, and dry to obtain a graphite-phase carbon nitride foam composite cuprous oxide quantum dot photocatalytic material; the catalytic activity of the produced product is high . The g‑C 3 N 4 The preparation method of foam is: with 5~14 mass parts g‑C 3 N 4 Add 100 parts by mass of deionized water, mix well and add 1.7 to 2.0 parts by mass of sodium dodecylsulfonate, 1.7 to 2.0 parts by mass of dodecyl alcohol and 1.7 to 2.0 parts by mass of resin glue, and then add 5 ~14 parts by mass of binder, continue to stir, shape, freeze-dry, and dry at 80~100°C to obtain g-C 3 N 4 Foam.

Description

technical field [0001] The invention belongs to the technical field of photocatalytic materials. Specifically relates to a graphite phase carbon nitride foam composite cuprous oxide quantum dot photocatalytic material and a preparation method thereof. Background technique [0002] Photocatalytic reduction of CO 2 Technology is a process of using photocatalytic materials to convert solar energy into chemical energy. After absorbing sunlight, the electrons on the valence band are excited to jump to the conduction band, generating photogenerated electrons with strong reducing ability, thereby converting CO 2 Reduced to CO, CH 4 、CH 3 Substances such as OH and HCOOH that can be burned to provide energy. [0003] Photocatalytic materials are the core working components of photocatalytic systems, and their structure and performance directly determine the efficiency of photocatalytic reactions. g-C 3 N 4 As a non-metallic polymer semiconductor material, due to its good chemi...

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Problems solved by technology

[0004] In recent years, many reports have proposed that in g-C 3 N 4 Based on compounding second-phase semiconductor materials to reduce the recombination probability of photogenerated electrons and holes, such as "a ZnO / g-C 3 N 4 Preparation method of composite photocatalyst" (CN 102950016 B) patented technology, "a visible light active g-C 3 N 4 / Zn 3 (VO 4 ) 2 Preparation method of composite photocatalyst" (CN 106179439 B) patented technology and a g-C 3 N 4 / SiO 2 Heterojunction photocatalyst preparation method" (CN 106391086 A) patent technology, mainly through other semiconductor materials and g-C 3 N 4 Forming a heterojunction reduces the recombination of electrons and holes, but does not effectively improve the powdered g-C 3 N 4 to CO 2 gas adsorption capacity

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