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An organic photodetector based on a magnetic field effect spin-coating process and its preparation method

A photodetector and spin coating technology, which is applied in the materials of organic semiconductor devices, photovoltaic power generation, electric solid state devices, etc., can solve the problems of uneven thickness of the active layer film, poor performance of organic photodetectors, etc. Inhomogeneity, optimized donor and acceptor phase separation, improved effect of short circuit current

Active Publication Date: 2020-06-23
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The object of the present invention is: the present invention provides a kind of organic photodetector and preparation method based on the magnetic field effect spin-coating process, solves the poor performance of the organic photodetector caused by the non-uniform thickness of the active layer film prepared by the conventional spin-coating process The problem

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  • An organic photodetector based on a magnetic field effect spin-coating process and its preparation method
  • An organic photodetector based on a magnetic field effect spin-coating process and its preparation method

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preparation example Construction

[0040] A method for preparing an organic photodetector as claimed in any one of claims 1-5, comprising the steps of:

[0041] Step 1: Clean the substrate, dry it with nitrogen, and place a magnet device under the substrate;

[0042] Step 2: Spin-coat the configured ZnO precursor solution onto the substrate, and perform thermal annealing on the spin-coated substrate to obtain an electron transport layer. The temperature of thermal annealing is 150°C for 15 minutes;

[0043] Step 3: On the electron transport layer, a photoactive layer is prepared by performing a magnetic field effect spin-coating process based on a magnet device, and the photoactive layer includes a homogeneously distributed film;

[0044] Step 4: In a vacuum of 3*10 3 Under the condition of Pa, evaporate MoO on the surface of the photoactive layer 3 obtaining a hole transport layer;

[0045] Step 5: Evaporating a metal anode on the hole transport layer to complete the preparation of the photodetector.

[0...

Embodiment 1

[0052] Such as figure 2 As shown, the substrate composed of a transparent substrate and a transparent conductive cathode with a surface roughness less than 1nm is cleaned, and then dried with nitrogen gas. The transparent conductive cathode material is ITO; UV ultraviolet treatment is performed on the surface of the transparent conductive cathode ITO Minutes later, spin-coat the ZnO precursor solution, the ZnO precursor solution includes 60% zinc acetate and 40% ethanolamine, the spin-coating speed is 800rpm, and the time is 12h, then carry out thermal annealing treatment (150 ℃, 15min) to prepare the electron transport layer, anneal P3HT:PC was prepared on the electron transport layer by magnetic field spin-coating method by heating on a constant temperature hot stage. 71 BM (1:1, 30mg / ml) photoactive layer (1100rpm, 30s), the corresponding thickness is 80nm, and the hole transport layer MoO is evaporated on the surface of the photoactive layer 3 (15nm); metal anode Ag (100...

Embodiment 2

[0054] Such as figure 2 As shown, the substrate composed of a transparent substrate and a transparent conductive cathode with a surface roughness of less than 1nm is cleaned, dried with nitrogen after cleaning, and subjected to UV ultraviolet treatment on the surface of the transparent conductive cathode ITO for 15 minutes and then spin-coated to prepare a ZnO precursor. Body solution, ZnO precursor solution includes 60% zinc acetate and 40% ethanolamine, the spin coating speed is 800rpm, the time is 12h, and then thermal annealing treatment (150 ℃, 15min) to prepare the electron transport layer, annealing adopts constant temperature hot stage heating, in On the electron transport layer, the P3HT: PC71BM: poly-BPIO (1:1:0.03, 30mg / ml) photoactive layer (1100rpm, 30s) was prepared by magnetic field spin coating, and the corresponding thickness was 80nm, and the anode was evaporated on the surface of the photoactive layer Buffer layer MoO3 (15nm); Metal anode Ag (100nm) is vapo...

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Abstract

The invention discloses an organic photodetector based on a magnetic field effect spin-coating process and a preparation method thereof, belonging to the field of organic semiconductor thin film photodetectors; the organic photodetector includes a substrate, an electron transport layer, and a photoactive layer sequentially arranged from bottom to top , a hole transport layer and a metal anode, the substrate includes a substrate and a transparent conductive cathode arranged from bottom to top, the photoactive layer includes a uniformly distributed thin film, and the thin film is composed of a mixed prepared electron donor material, electron acceptor The bulk material and the organic magnetic material are made through a magnetic field effect spin coating process; the present invention uses a magnetic field spin coating process to prepare a photoactive layer doped with an organic magnetic material, which solves the problem of uneven film thickness of the active layer prepared by a general spin coating process. The problem of poor performance of organic photodetectors has achieved the effect of increasing photocurrent density, reducing dark current, and improving device performance.

Description

technical field [0001] The invention belongs to the field of organic semiconductor thin film photodetectors, in particular to an organic photodetector based on a magnetic field effect spin-coating process and a preparation method thereof. Background technique [0002] Organic photodetectors are sensors made of materials with photoelectric effect that can realize photoelectric conversion; traditional photodetectors are made of inorganic semiconductor materials, which have disadvantages such as complicated manufacturing process, high cost, and not suitable for large-area devices. ; Organic semiconductor materials are widely used because of their high-efficiency light sensitivity, light weight, low price, and excellent processing performance. The ubiquitous defects such as expensive equipment and complicated process; organic semiconductor materials provide great options for the development and innovation of organic photodetection devices, and new materials with corresponding op...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/46H01L51/42H01L51/48H01F1/42
CPCH01F1/42H10K71/12H10K30/20H10K2102/00Y02E10/549
Inventor 于军胜韩于张晓华刘德胜
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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