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Resist underlayer film forming composition containing compound having hydantoin ring

A technology of resist lower layer and photoresist layer, which is applied in the direction of organic chemistry, photographic plate-making process of pattern surface, photosensitive material used in optomechanical equipment, etc., and can solve the problem that resist pattern cannot be formed , to achieve the effects of reduced sublimation content, thermal sublimation suppression, and high dry etching speed

Inactive Publication Date: 2019-03-01
NISSAN CHEM IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is known that a resist pattern of a desired shape cannot be formed due to this standing wave

Method used

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  • Resist underlayer film forming composition containing compound having hydantoin ring
  • Resist underlayer film forming composition containing compound having hydantoin ring
  • Resist underlayer film forming composition containing compound having hydantoin ring

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0072] Hereinafter, specific examples of the resist underlayer film-forming composition of the present invention will be described using the following synthesis examples and examples, but the present invention is not limited thereto.

[0073] The apparatus etc. used for the measurement of the weight average molecular weight of the compound obtained in the following synthesis example are shown.

[0074] Device: HLC-8320GPC manufactured by Tosoh Corporation)

[0075] GPC column: KF-803L, KF-802, KF-801 (manufactured by Showa Denko Co., Ltd.)

[0076] Column temperature: 40°C

[0077] Solvent: THF

[0078] Flow: 1.0mL / min

[0079] Injection volume: 50μL

[0080] Measurement time: 35 minutes

[0081] Standard sample: Polystyrene (manufactured by Showa Denko Co., Ltd.)

[0082] Detector: RI

[0083]

[0084] Under a nitrogen atmosphere, 30.0 g of triglycidyl isocyanurate (manufactured by Nissan Chemical Industries, Ltd.), 1-hydroxymethyl-5,5-dimethylhydantoin (Tokyo Kasei...

Embodiment 2

[0095] 0.017 g of 5-sulfosalicylic acid (manufactured by Tokyo Chemical Industry Co., Ltd.), containing 0.017 g of the compound obtained in Synthesis Example 1 above, was mixed with 3.42 g of a solution (the solvent used in the synthesis was PGME) containing 0.51 g of the compound obtained in Synthesis Example 1 above. 0.63 g of a solution of 0.18 g of the compound obtained in 2 (the solvent is PGME used during synthesis), and 0.00051 g of a surfactant (DIC Co., Ltd., trade name: R-30N), 14.06 g of PGME, and 1.88 g of PGMEA, A solution containing 3.54% by mass of mixing components other than the solvent was prepared. This solution was filtered using a polytetrafluoroethylene microfilter with a pore diameter of 0.2 μm to prepare a composition for forming a resist underlayer film.

Embodiment 3

[0097] 1,3,4,6-Tetrakis(methoxymethyl)glycoluril (Mitsui Cytech Co., Ltd. ), product name: Paudarlink 1174) 0.44 g, 5-sulfosalicylic acid (manufactured by Tokyo Chemical Industry Co., Ltd.) 0.22 g, 10.94 g of a solution containing 3.09 g of the compound obtained in Synthesis Example 2 above (solvent: PGME used during synthesis), and surfactant (DIC Co., Ltd., trade name: R-30N) 0.0088g, PGME245.22g, and PGMEA33.74g, made a solution of 3.60% by mass of the mixed components except the solvent . This solution was filtered using a polytetrafluoroethylene microfilter with a pore diameter of 0.2 μm to prepare a composition for forming a resist underlayer film.

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Abstract

To provide a novel resist underlayer film forming composition which contains a compound having a hydantoin ring. [Solution] A resist underlayer film forming composition which contains: a compound thathas at least two substituents represented by formula (1) in each molecule; and a solvent. In the formula, each of R1 and R2 independently represents a hydrogen atom or a methyl group; and X1 represents a hydroxyalkyl group having 1 to 3 carbon atoms or an alkyl group having 2 to 6 carbon atoms, while having one or two ether bonds in the main chain.

Description

technical field [0001] The present invention relates to a composition for forming a resist underlayer film containing a compound having a hydantoin ring. Moreover, this invention relates to the formation method of the photoresist pattern using this composition for resist underlayer film formation. Background technique [0002] For example, in the manufacture of semiconductor elements, it is known to form a fine resist pattern on a substrate by photolithography including an exposure step using a KrF excimer laser or an ArF excimer laser as a light source. KrF excimer laser light or ArF excimer laser light (incident light) incident on the resist film before resist pattern formation generates standing waves in the resist film by being reflected on the substrate surface. It is known that a resist pattern of a desired shape cannot be formed due to this standing wave. It is also known to provide an antireflection film that absorbs incident light between a resist film and a subst...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/11C07C43/13C07D251/34C07D403/14C08L65/00G03F7/20H01L21/027
CPCC07C43/13C07D403/14C07D251/34C08L65/00H01L21/027G03F7/094G03F7/091G03F7/11G03F7/20G03F7/26G03F7/0045G03F7/168
Inventor 绪方裕斗后藤裕一远藤雅久臼井友辉岸冈高广
Owner NISSAN CHEM IND LTD
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