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Tin-doped molybdenum oxide thin film, wide-spectrum photodetector array based on tin-doped molybdenum oxide thin film and preparation method thereof

A photodetector, molybdenum oxide technology, used in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of difficulty in preparing doped molybdenum oxide thin films, complicated procedures, etc., and achieve good humidity and thermal stability. Large layer area and uniform thickness

Active Publication Date: 2020-09-04
JINAN UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, there are various preparation methods for ion-doped molybdenum oxide thin films, such as peroxide sol-gel method, spin coating method and spray coating method, but most of these methods must first prepare doped molybdenum oxide solution, the procedure is complicated, and it is difficult to Preparation of Large Area and Uniform Doped Molybdenum Oxide Thin Films

Method used

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  • Tin-doped molybdenum oxide thin film, wide-spectrum photodetector array based on tin-doped molybdenum oxide thin film and preparation method thereof
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  • Tin-doped molybdenum oxide thin film, wide-spectrum photodetector array based on tin-doped molybdenum oxide thin film and preparation method thereof

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Embodiment Construction

[0029] The present invention will be described in further detail below in conjunction with the embodiments and accompanying drawings, so that those skilled in the art can understand the features and advantages of the present invention, so as to define the protection scope of the present invention more clearly.

[0030] The tin-doped molybdenum oxide thin film of the invention is formed by grinding molybdenum oxide powder and tin protochloride powder and vapor-depositing. In the tin-doped molybdenum oxide thin film, the tin / molybdenum molar ratio is 0.038-1.52.

[0031] A wide-spectrum photodetector array prepared by using the tin-doped molybdenum oxide film, which includes a substrate, a tin-doped molybdenum oxide film on the substrate, and an electrode array on the tin-doped molybdenum oxide film;

[0032] The substrate can be an insulating substrate or a conductive substrate, and the insulating substrate can be quartz glass, SiO 2 or Al 2 o 3 , sapphire or PET and other in...

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Abstract

The invention relates to a tin-doped molybdenum oxide thin film, a wide-spectrum photodetector array based on the tin-doped molybdenum oxide thin film and a preparation method thereof. The method comprises the following steps: step a, evenly grinding molybdenum oxide powder and stannous chloride powder according to a certain mass ratio, placing the evenly-ground powder in a tungsten boat in a vacuum chamber, and sticking a clean substrate on a sample seat at the top of the chamber; and step b, vacuumizing the chamber, and starting evaporation until the intensity of pressure is less than 5*10-4Pa; and after slowly increasing the current to 50A, opening a baffle, first slowly evaporating to 10nm, and then continuing to increase the current to about 60A, evaporating at a faster rate, and turning off an evaporation power supply until the thin film is completed, and taking out a sample after natural cooling. According to the above mode of the invention, the tin-doped molybdenum oxide thin film with a large area and uniformity is prepared by utilizing a mature thermal evaporation deposition technology, the manufacturing mode is simple, and industrialization is facilitated.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic materials, in particular to a tin-doped molybdenum oxide thin film, a wide-spectrum photodetector array based on the tin-doped molybdenum oxide thin film and a preparation method thereof. Background technique [0002] As a unique optoelectronic device, wide-spectrum detectors are widely used in fields such as multi-spectral detection, telecommunication, night vision or infrared thermal imaging. Traditional narrow-bandgap materials such as silicon, indium gallium arsenide, mercury cadmium telluride, and lead sulfide cover the spectral range from ultraviolet to far infrared. However, most photodetector arrays based on narrow-bandgap materials are limited in their wide application due to their high manufacturing cost, complex manufacturing process, and the need for low-temperature operation during the test process. Therefore, finding a material with excellent performance and being stable ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L21/02H01L31/032H01L31/09
CPCH01L21/02565H01L21/0257H01L21/02631H01L31/0321H01L31/09H01L31/18Y02P70/50
Inventor 谢伟广何锐辉赖浩杰
Owner JINAN UNIVERSITY
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