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Hydrogen-reduced thin-layer titanium carbide loaded cuprous oxide photo-cathode material for photoelectrolysis of water and preparation method for photo-cathode material

A technology of cuprous oxide light and cuprous oxide, which is applied in the direction of electrodes, electrolytic processes, electrolytic components, etc., can solve the problems of application limitations, poor stability, photocorrosion, etc., easy to achieve conditions, simple preparation process, and improved photoelectrochemical performance Effect

Active Publication Date: 2019-05-03
XIANGTAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Cu 2 As a common p-type semiconductor material, O has attracted extensive attention in many fields due to its suitable band gap, good photoresponse, and low price. 2 The O material itself is prone to photocorrosion in the electrolyte and has poor stability, which greatly limits its practical application.

Method used

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  • Hydrogen-reduced thin-layer titanium carbide loaded cuprous oxide photo-cathode material for photoelectrolysis of water and preparation method for photo-cathode material
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  • Hydrogen-reduced thin-layer titanium carbide loaded cuprous oxide photo-cathode material for photoelectrolysis of water and preparation method for photo-cathode material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Cu 2 O / Ti 3 C 2 T x and Cu 2 O / H:Ti 3 C 2 T x Preparation of composite electrodes

[0034] (1) Put titanium aluminum carbide in hydrofluoric acid and stir at room temperature for 20 h, wash until neutral, filter with suction, and dry in vacuum;

[0035](2) Add the substance obtained in step (1) into the dimethyl sulfoxide solution and stir for 20 h, wash to remove excess dimethyl sulfoxide, then sonicate under an argon atmosphere, centrifuge and dry to obtain a thin layer of titanium carbide, namely Ti 3 C 2 T x ;

[0036] (3) React the thin-layer titanium carbide obtained in step (2) in a reducing atmosphere of hydrogen at 400°C for 30 min to obtain reduced thin-layer titanium carbide, namely H:Ti 3 C 2 T x ;

[0037] (4) Stir and disperse potassium hydroxide and ammonium persulfate in water evenly to obtain an aqueous solution of 0.23 mol / L potassium hydroxide and 1.47 mol / L ammonium persulfate, then place the copper sheet in the solution, react for 5 m...

Embodiment 2

[0042] Cu 2 O / Ti 3 C 2 T x and Cu 2 O / H:Ti 3 C 2 T x Preparation of composite electrodes

[0043] (1) Put titanium silicon carbide in hydrofluoric acid and stir at room temperature for 24 h, wash until neutral, filter with suction, and dry in vacuum;

[0044] (2) Add the substance obtained in step (1) into the dimethyl sulfoxide solution and stir for 24 h, wash to remove excess dimethyl sulfoxide, then sonicate under an argon atmosphere, centrifuge and dry to obtain a thin layer of titanium carbide, namely Ti 3 C 2 T x ;

[0045] (3) React the thin-layer titanium carbide obtained in step (2) in a reducing atmosphere of hydrogen at 500°C for 30 min to obtain reduced thin-layer titanium carbide, namely H:Ti 3 C 2 T x ;

[0046] (4) Copper sheet is used as working electrode, platinum sheet is used as counter electrode, 3 mol / L sodium hydroxide solution is used as electrolyte, and the current is 5 mA / cm 2 After reacting for 10 min, the copper sheet was rinsed with ...

Embodiment 3

[0051] Cu 2 O / Ti 3 C 2 T x and Cu 2 O / H:Ti 3 C 2 T x Preparation of composite electrodes

[0052] (1) Put titanium aluminum carbide in hydrofluoric acid and stir at room temperature for 24 h, wash until neutral, filter with suction, and dry in vacuum;

[0053] (2) Add the substance obtained in step (1) into the dimethyl sulfoxide solution and stir for 24 h, wash to remove excess dimethyl sulfoxide, then sonicate under an argon atmosphere, centrifuge and dry to obtain a thin layer of titanium carbide, namely Ti 3 C 2 T x ;

[0054] (3) React the thin-layer titanium carbide obtained in step (2) in a reducing atmosphere of hydrogen at 600°C for 30 min to obtain reduced thin-layer titanium carbide, namely H:Ti 3 C 2 T x ;

[0055] (4) Add 3 mg / mL lactic acid solution to 0.3 mg / mL copper nitrate solution as the electrolyte, adjust the pH to be alkaline, use FTO conductive glass as the substrate, platinum sheet as the counter electrode, and silver / silver chloride elec...

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Abstract

The invention discloses a hydrogen-reduced thin-layer titanium carbide loaded cuprous oxide photo-cathode material for photoelectrolysis of water and a preparation method for the photo-cathode material. According to the method, the composite photo-electrode material with relatively high photoelectrochemical properties, i.e., hydrogen-reduced thin-layer titanium carbide loaded cuprous oxide, i.e.,Cu2O / H:Ti3C2Tx is synthesized through preparing cuprous oxide by taking conductive glass or copper as a substrate and loading the surface of the cuprous oxide with hydrogen-reduced thin-layer titaniumcarbide. The electrode material comprises a substrate, cuprous oxide and the hydrogen-reduced thin-layer titanium carbide. The hydrogen-reduced thin-layer titanium carbide is loaded with a cuprous oxide electrode, so that the photoelectrochemical properties of the electrode material can be remarkably improved, and the electrode material can be applied to the fields of preparation of solar photovoltaic cells, construction of photoelectrochemical sensors, photoelectro-catalyzed water-decomposition hydrogen production and the like.

Description

technical field [0001] The invention relates to an electrode material, in particular to a hydrogen-reduced thin-layer titanium carbide-supported cuprous oxide photocathode material for photoelectrolysis of water and a preparation method thereof. Background technique [0002] With the acceleration of industrialization and the rapid growth of population, human beings are facing the crisis of severe energy shortage and environmental degradation. As a new energy source, solar energy has the advantages of being clean, efficient, and renewable. Photoelectrochemical technology can make rational use of solar energy, and suitable semiconductor materials play an important role in photoelectrochemistry. [0003] Cu 2 As a common p-type semiconductor material, O has attracted extensive attention in many fields due to its suitable band gap, good photoresponse, and low price. 2 The O material itself is prone to photocorrosion in the electrolyte and has poor stability, which greatly limi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25B11/04C25B1/04
CPCY02E60/36Y02P20/133
Inventor 刘冀锴付星晨罗和安
Owner XIANGTAN UNIV
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