Diamond/graphene composite heat conduction film, preparation method thereof and heat dissipation system

A graphene composite, diamond thin film technology, applied in chemical instruments and methods, heat exchange materials, metal material coating processes, etc., can solve the problems of low binding force between graphene and diamond, complex preparation process, and high interface thermal resistance. , to achieve the effect of easy industrial production and use, excellent thermal conductivity structure, and excellent heat dissipation performance

Pending Publication Date: 2019-05-07
SHENZHEN INST OF ADVANCED TECH
View PDF1 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in this patent, the graphene based on the PMMA substrate is transferred to the diamond. The obtained graphene and di

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Diamond/graphene composite heat conduction film, preparation method thereof and heat dissipation system
  • Diamond/graphene composite heat conduction film, preparation method thereof and heat dissipation system
  • Diamond/graphene composite heat conduction film, preparation method thereof and heat dissipation system

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0041] The second aspect of the embodiments of the present invention provides a method for preparing a diamond / graphene composite thermally conductive film, including:

[0042] S01, providing a substrate, and depositing a microcrystalline diamond film on the surface of the substrate;

[0043] S02, removing the substrate by etching to obtain a self-supporting microcrystalline diamond film; wherein the self-supporting microcrystalline diamond film includes a surface to be nucleated, and the surface to be nucleated is the microcrystalline diamond film before corrosion Contact surface with the substrate;

[0044] S03, deposit a transition metal layer on the surface to be nucleated, and place the self-supporting microcrystalline diamond film deposited with the transition metal layer in the cavity of the hot-wire vapor deposition chamber for rapid annealing treatment, in the transition metal layer The transition metal catalyzes part of the carbon elements in the microcrystalline diamond f...

Example Embodiment

[0078] Example 1:

[0079] A diamond / graphene composite thermal conductive film and a preparation method thereof, which include the following steps:

[0080] (1) Depositing high thermal conductivity microcrystalline diamond film on the surface of silicon substrate:

[0081] Micron crystal diamond film preparation method 1: hot wire chemical vapor deposition (HFCVD) method is used to prepare a 1mm thick diamond film layer on a single crystal (100) silicon wafer with a size of Φ200mm. Place the silicon wafer in NH before growth 4 OH / H 2 O 2 / Deionized water (1:1:5) mixed solution, heated to 70℃ for 1 hour, rinse the silicon wafers, then put the silicon wafers in acetone solution for ultrasonic cleaning for 10 minutes, and deionized water for ultrasonic cleaning for 10 minutes , Ultrasonic cleaning in alcohol solution for 10 minutes. Subsequently, the cleaned silicon wafer was placed in the nano-diamond powder suspension for ultrasonic treatment for 1 hour. The average particle size ...

Example Embodiment

[0086] Example 2:

[0087] A diamond / graphene composite thermal conductive film and a preparation method thereof, which include the following steps:

[0088] Step (1) is the same as in Example 1;

[0089] (2) Preparation of graphene layer on the surface of microcrystalline diamond film:

[0090] (a) Put the diamond / silicon sample into a mixed solution of hydrofluoric acid / sulfuric acid / glacial acetic acid with a ratio of 1:1:2 to corrode the silicon substrate (or put it in a 30% (w / v) KOH solution and heat Silicon etching to 85°C), the etching time is 5-24 hours. Then the obtained self-supporting diamond film is washed and dried. The smooth diamond surface obtained after etching the silicon substrate is called the diamond film nucleation surface. Using the bottom surface of diamond as the deposition surface of high-purity nickel metal, place the self-supporting diamond film into the electron beam deposition equipment, and turn on the equipment until the background vacuum reaches 10...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Diameteraaaaaaaaaa
Login to view more

Abstract

The invention provides a diamond/graphene composite heat conduction film. The diamond/graphene composite heat conduction film comprises a micro-grain diamond thin film and a graphene layer arranged onthe surface of the micron-grain diamond thin film. The diamond and the graphene in the diamond/graphene composite heat conduction film form an excellent heat conduction structure, and the obtained composite heat conduction film has efficient heat conduction performance. The invention further provides a preparation method of the diamond/graphene composite heat conduction film. The preparation method comprises the following steps that a substrate is provided, and the micron-grain diamond thin film is deposited on the surface of the substrate; the substrate is corroded and removed, and the self-supported micron-grain diamond thin film is obtained; the self-supported micron-grain diamond thin film comprises a to-be-nucleated surface; and a transition metal layer is deposited on the to-be-nucleated surface, the self-supported micron-grain diamond thin film with the transition metal layer deposited is placed in a hot-filament vapor deposition chamber cavity for rapid annealing treatment toobtain the diamond/graphene composite heat conduction film, wherein the annealing temperature is 800-1100 DEG C, and the annealing time is 1-5 min. The invention further provides a heat dissipation system.

Description

technical field [0001] The invention relates to the field of thermally conductive materials, in particular to a diamond / graphene composite thermally conductive film, a preparation method thereof, and a heat dissipation system. Background technique [0002] At present, diamond heat sinks and graphene-based composite materials have been used in the thermal management of high-end high-power devices. advantage has become a research hotspot. For example, the invention patent CN201510406256.7 discloses "a method for preparing an ultra-high directional thermal conductivity carbon-based composite material". The surface of natural or synthetic diamond is precisely polished and cleaned to achieve atomic level flatness; Graphene based on methyl acrylate (PMMA) substrate is directly spread on the diamond surface to obtain a highly directional thermal conductivity composite material. However, in this patent, the graphene based on the PMMA substrate is transferred to the diamond. The ob...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C23C16/01C23C16/27C23C16/56C09K5/14
Inventor 杨扬唐永炳谷继腾
Owner SHENZHEN INST OF ADVANCED TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap