Low temperature high-performance silicon carbide film and preparation method thereof

A high-performance silicon carbide membrane and silicon carbide technology, which is applied in chemical instruments and methods, membrane technology, ceramic products, etc., can solve the problems of limiting the wide application of silicon carbide separation membrane materials, restricting the development of water treatment fields, and demanding atmosphere, etc. problems, to achieve the effects of saving preparation costs, enhancing strength, and reducing firing energy consumption

Inactive Publication Date: 2019-05-17
SHANDONG RES & DESIGN ACADEMY OF IND CERAMICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Since the silicon carbide separation membrane material has the advantages of low contact angle, good wettability, negative charge, and good anti-pollution performance, it has very important application value in the field of water treatment, but due to its high firing temperature and atmosphere requirements Strict and other problems, it seriously limits the wide application of silicon carbide separation membrane materials, and restricts the development of water treatment field, this problem urgently needs to be solved

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] The preparation process of the low-temperature high-performance silicon carbide film layer in this embodiment is as follows:

[0023] S1. Add the silicon carbide (0.05-200 microns), the solid content of the aluminum sol and the nano-powder of rare earth scandium oxide weighed in a ratio of 80:15:5 to the dispersant ethanol, and stir and mix in a stirrer to obtain dispersion solution;

[0024] S2. Add a defoamer to the dispersion solution, put it into a membrane slurry preparation device for stirring, vacuum ultrasonic dispersion to obtain a membrane slurry.

[0025] S3. Coating the film slurry on the silicon carbide support by means of immersion coating, spray coating, etc., drying and curing, and firing at 1100° C. to obtain the silicon carbide film layer.

Embodiment 2

[0027] The preparation process of the low-temperature high-performance silicon carbide film layer in this embodiment is as follows:

[0028] S1. Add silicon carbide (0.05-200 microns), solid content of aluminum sol and solid content of rare earth yttrium oxide sol weighed in a ratio of 99:0.9:0.1 to the dispersant polypropylene alcohol, and place it in the mixer Stir and mix to obtain a dispersed solution;

[0029] S2. Add a defoamer to the dispersion solution, put it into a membrane slurry preparation device for stirring, vacuum ultrasonic dispersion to obtain a membrane slurry.

[0030] S3. Coating the film slurry on the alumina support by means of immersion coating, spray coating, etc., drying and curing, and firing at 1190° C. to obtain the silicon carbide film layer.

Embodiment 3

[0032] The preparation process of the low-temperature high-performance silicon carbide film layer in this embodiment is as follows:

[0033] S1, the solid content of silicon carbide (0.05-200 microns), aluminum sol and the mixed nanopowder of rare earth lanthanum oxide and cerium oxide (the weight of the mixed nanopowder of lanthanum oxide and cerium oxide) weighed in a ratio of 89.9:0.1:10 The ratio is 1:1) into the mixed solution of dispersant polyacrylic acid and sodium polyacrylate (the volume ratio of polyacrylic acid and sodium polyacrylate is 1:1), and put it in a stirrer to stir and mix to obtain a dispersion solution;

[0034] S2. Add a defoamer to the dispersion solution, put it into a membrane slurry preparation device for stirring, vacuum ultrasonic dispersion to obtain a membrane slurry.

[0035] S3. Coating the film slurry on the cordierite support by means of immersion coating, spray coating, etc., drying and curing, and firing at 1000° C. to obtain the silicon ...

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Abstract

The invention relates to a low temperature high-performance silicon carbide film and a preparation method thereof. The preparation method comprises the steps that oxidation of silicon carbide powder in high temperature environment is utilized for generating silicon dioxide on the surfaces of particles, silicon dioxide reacts with added nanoscale alumina sol coating the surfaces of the silicon carbide particles to build a mullite network structure, the particle interface strength is enhanced, liquid phase generating temperature is lowered by utilizing existence of nanoscale rare earth oxide molecules, growth of mullite seed crystals is inhibited, so that the aggregate molecular grain size in the film is even, and accordingly the resistance of the film is reduced. The atmosphere does not need to be controlled in the burning process of the silicon carbide film layer, and the oxidation degree of silicon carbide is adjusted through the burning temperature and the adding proportion of alumina sol. The whole preparation technology is simple and controllable, the burning temperature of the film is greatly lowered compared with that of an existing silicon carbide film, burning energy consumption is correspondingly remarkably reduced, and the preparation cost is saved greatly.

Description

technical field [0001] The invention relates to a silicon carbide separation membrane material, in particular to a low-temperature, high-performance silicon carbide membrane layer and a preparation method thereof. Background technique [0002] Since the silicon carbide separation membrane material has the advantages of low contact angle, good wettability, negative charge, and good anti-pollution performance, it has very important application value in the field of water treatment, but due to its high firing temperature and atmosphere requirements Therefore, the wide application of silicon carbide separation membrane materials is severely restricted, and the development of the water treatment field is restricted. This problem needs to be solved urgently. Contents of the invention [0003] In order to solve the above technical problems, the object of the present invention is to provide a low-temperature high-performance silicon carbide film and a preparation method thereof. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/565C04B35/622C04B38/00B01D71/02B01D67/00
Inventor 马腾飞赵世凯薛友祥程之强徐传伟唐钰栋张久美侯立红付金刚
Owner SHANDONG RES & DESIGN ACADEMY OF IND CERAMICS
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