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A kind of gan-based vertical cavity surface emitting laser and its preparation method

A vertical cavity surface emission and laser technology, applied in lasers, laser parts, semiconductor lasers, etc., can solve the problems affecting device performance, poor sapphire electrical conductivity, poor thermal conductivity, etc., achieving a simple preparation method, improving yield and device performance. , the effect of reducing costs

Active Publication Date: 2020-06-30
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the poor electrical and thermal conductivity of sapphire, especially when high current density is injected, it will seriously affect the performance of the device.

Method used

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  • A kind of gan-based vertical cavity surface emitting laser and its preparation method
  • A kind of gan-based vertical cavity surface emitting laser and its preparation method
  • A kind of gan-based vertical cavity surface emitting laser and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] A GaN-based vertical cavity surface emitting laser, such as figure 1 As shown, a conductive substrate 22 is included. A metal layer 21 is formed on the upper surface of the conductive substrate 22. A window is arranged in the middle of the upper surface of the metal layer 21. A dielectric DBR layer 20 is made at the window in the middle part of the upper surface of the metal layer 21. The dielectric DBR Layer 20 upper surface is made with transparent conductive layer 19, transparent conductive layer 19 covers medium DBR layer 20 and metal layer 21; The semiconductor layer 16, the upper surface of the n-type semiconductor layer 16 is grown to prepare a porous conductive DBR layer 15', the upper surface of the porous conductive DBR layer 15' is made with an insulating medium layer 23, and the middle of the insulating medium 23 layer forms a current window, and the insulating medium layer 23 covers the porous conductive DBR layer 15', the n-type semiconductor layer 16, the...

Embodiment 2

[0048] A GaN-based vertical cavity surface-emitting laser, the structure of which is shown in Embodiment 1, the difference is that the porous conductive DBR layer 15' is a multi-period DBR formed by alternately stacking high-porosity porous GaN layers and low-porosity porous GaN layers structure, the high-porosity porous GaN layer and the low-porosity porous GaN layer are formed by electrochemical corrosion of the heavily doped GaN layer and the lightly doped GaN layer respectively, and the dopants of the lightly doped GaN layer and the heavily doped GaN layer is silicon, and its doping concentration is 5×10 17 cm -3 and 5×10 19 cm -3 .

Embodiment 3

[0050] A GaN-based vertical cavity surface emitting laser, the structure is as shown in embodiment 1, the difference is, as figure 1 As shown, the period number of the porous conductive DBR layer 15' of this embodiment is 6, the reflectivity is less than 99.8%, and the aperture of the porous conductive DBR layer 15' is 1-300nm.

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Abstract

The invention relates to a GaN-based vertical cavity surface emitting laser and a preparation method thereof, and belongs to the field of optoelectronics. The laser comprises a conductive substrate, wherein a metal layer is formed on the conductive substrate, a dielectric DBR layer is formed on the window of the metal layer, a transparent conductive layer is formed on the dielectric DBR layer, a p-type semiconductor layer, a multi-quantum well active layer and an n-type semiconductor layer are sequentially formed on the transparent conductive layer, a porous conductive DBR layer is generated and formed on the upper surface of the n-type semiconductor layer, the upper surface of the porous conductive DBR layer is formed with an insulating dielectric layer that covers the porous conductive DBR layer, the n-type semiconductor layer, the multi-quantum well active layer, the p-type semiconductor layer and the transparent conductive layer, and the upper surface of the insulating dielectric layer is formed with an n-electrode. The GaN-based vertical cavity surface emitting laser and the preparation method thereof transfer the epitaxial structure onto the substrate with good conductivity by metal bonding technology, and form a porous GaN conductive DBR structure by electrochemical etching, thereby increasing the current density of the device and improving the photoelectric performance.

Description

technical field [0001] The invention relates to a GaN-based vertical cavity surface-emitting laser and a preparation method thereof, belonging to the technical field of semiconductor optoelectronics. Background technique [0002] Group-III nitride wide-bandgap semiconductor materials have unique physical characteristics such as large bandgap, coverage from infrared to ultraviolet, strong breakdown field, high temperature resistance, acid and alkali resistance, etc., and are widely used in the fields of optoelectronics and power electronics Countries around the world have successively issued policies and plans on third-generation wide-bandgap semiconductor materials and devices to seize the commanding heights in this field. GaN-based materials are direct bandgap semiconductor materials with continuously adjustable bandgap. Due to their stable characteristics, they have broad application prospects in lighting, display, medical and communication fields. [0003] Compared with ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/183H01S5/187
Inventor 张宇魏斌
Owner SHANDONG UNIV
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