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A kind of micro-assembled bare chip connection and repair method

A bare chip and micro-assembly technology, which is applied to semiconductor devices, electrical components, circuits, etc., can solve problems such as poor connection strength and high temperature resistance of bare chips, and achieve good electrical conductivity, reliable subsequent connections, and stable performance.

Active Publication Date: 2021-06-22
CHINA ELECTRONIC TECH GRP CORP NO 38 RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is: in the prior art, the bare chip micro-assembly connection method is not resistant to high temperature and the connection strength is poor

Method used

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  • A kind of micro-assembled bare chip connection and repair method
  • A kind of micro-assembled bare chip connection and repair method
  • A kind of micro-assembled bare chip connection and repair method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] A method for connecting and repairing a micro-assembled bare chip, comprising the steps of:

[0050] A. Assembly and connection: Clean the molybdenum-copper carrier 11 with alcohol, acetone, or ethylene glycol, and then air-dry the molybdenum-copper carrier 11, either naturally or with compressed air;

[0051] Plating gold or silver on the surface of the molybdenum copper carrier 11 and the bare chip 12;

[0052] Such as figure 2 As shown, on the molybdenum-copper carrier 11, the position where the bare chip 12 needs to be installed is coated with nano-silver solder paste 13, and the bare chip 12 is placed on the nano-silver solder paste 13, the molybdenum-copper carrier 11 and the bare chip 12, nano-silver solder paste 13 form the bare chip module 1, the molybdenum copper carrier 11, the bare chip 12, and the nano-silver solder paste 13 are all existing products, which can be purchased in the market;

[0053] B. Pressing and fixing: applying a pressure of 100 Pa bet...

Embodiment 2

[0069] The difference between this embodiment and Embodiment 1 is:

[0070] B. Pressure fixation: apply a pressure of 0.05MPa between the molybdenum copper carrier 11 and the bare chip 12 to fix it, such as Figure 4 As shown, pressure is applied between the molybdenum-copper carrier 11 and the bare chip 12 through the force applying part 4, the chip indenter 5, and the tray 6;

[0071] Such as Figure 4 As shown, the bottom surface of the molybdenum copper carrier 11 of the bare chip module 1 is placed on the tray 6, and then the die presser 5 is pressed on the upper edge of the bare chip 12, and the upper surface of the die presser 5 is exerted force with the force applying member 4 ;

[0072] Such as Figure 4 As shown, the tray 6 is provided with a vertical pole 61, and the top of the pole 61 is horizontally provided with a crossbar 62, and the crossbar 62 is located above the chip indenter 5;

[0073] Such as Figure 4 As shown, the force applying member 4 is a sprin...

Embodiment 3

[0084] The difference between this embodiment and Embodiment 1 is:

[0085] B. Pressure fixation: Apply a pressure of 0.1 MPa between the molybdenum copper carrier 11 and the bare chip 12 to fix it;

[0086] C. Sintering: Place the bare chip module 1 fixed under pressure in vacuum reflow soldering or vacuum brazing equipment, and evacuate the sintering environment to 50Pa, fill it with nitrogen protection, the oxygen concentration is <1000ppm, and the heating rate is 15 °C / min temperature rise, the bare chip module 1 is heated to 270 °C, then kept at 270 °C for 15 min, and then sintered at the highest temperature of 300 °C for 5 min.

[0087] working principle:

[0088] Through the above-mentioned micro-assembly bare chip connection and repair method, the micro-assembly of the bare chip can be easily realized, the process is simple, the quality is controllable, and the performance is stable. The package interface between the bare chip 12 and the molybdenum-copper carrier 11 i...

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Abstract

The present invention relates to the field of micro-assembly, in particular to a micro-assembly bare chip connection and repair method, comprising the following steps: A, assembly and connection; B, pressure fixing; C, sintering; D, brazing; E, inspection; F, Decomposition; G, repair; the advantages of the present invention are: the micro-assembly of the bare chip can be easily realized, the process is simple, the quality is controllable, the performance is stable, the packaging interface between the chip and the molybdenum copper carrier is resistant to high temperature and the connection strength is high The components manufactured by this method, the melting temperature of the chip connection interface is much higher than 600 ° C, and are minimally affected by the thermal shock of temperature cycles and other processes (such as rework, etc.), as long as the chip is not damaged, it can be repaired through an appropriate rework process Replacement can meet the needs of high-reliability manufacturing of single-chip circuits, hybrid circuits, multi-chip circuits, and microwave integrated circuit components in military electronic products, greatly reducing the scrap rate of chips.

Description

technical field [0001] The invention relates to the field of micro-assembly, in particular to a micro-assembly bare chip connection and repair method. Background technique [0002] In recent years, with the advancement of science and technology and the development of the aerospace industry, traditional silicon semiconductor devices and gallium arsenide devices with a limit operating temperature of about 200 ° C have been difficult to adapt to the 5G communication era and major national projects (such as the "Lunar Exploration Program") ", "spacecraft", "manned space station") and the commercial use of outer space, new materials such as silicon carbide and gallium nitride have large band gap, high breakdown voltage, high thermal conductivity, dielectric The advantages of small constants have also gradually shown great potential. And because silicon carbide and gallium nitride chips can better adapt to the characteristics of aerospace equipment that need to work in high-tempe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L21/50H01L21/56
CPCH01L21/02H01L21/50H01L21/56H01L2224/72
Inventor 王禾张加波任榕杨程吴昱昆
Owner CHINA ELECTRONIC TECH GRP CORP NO 38 RES INST