InGaAs single-photon avalanche photodiode based on wide spectral response, and manufacturing method of InGaAs single-photon avalanche photodiode

Abstract

The invention discloses an InGaAs single-photon avalanche photodiode based on wide spectral response. The InGaAs single-photon avalanche photodiode comprises a substrate; a short-wave light-transmitting window is formed in the substrate; an n electrode is arranged on one side of the substrate; a corrosion stop layer is arranged on the other side of the substrate; and an InGaAs standard wavelengthabsorption layer, a long-wave absorption layer, a gradient layer, a charge layer, a multiplication layer and a passivation layer are sequentially arranged on the corrosion stop layer. A stepped PN junction is arranged in the multiplication layer; a p electrode and the passivation layer are arranged on the other side of the multiplication layer. The p electrode, the stepped PN junction and the light-transmitting window are located on the same axis. The long-wave absorption layer is adopted for absorbing photons with the wavelength of 1,700-1,800nm, and meanwhile, photons with the waveband of 760-900nm are prevented from being absorbed in a substrate material through the light-transmitting window in the substrate. The response wavelength range of the InGaAs single-photon avalanche photodiodeis expanded to 760-1,800nm from 900-1,700nm, so that the detection sensitivity of single photon is improved in the waveband range.

Description

technical field [0001] The invention belongs to the technical field of light detection, in particular to an InGaAs single-photon avalanche photodiode with wide spectral response. Background technique [0002] Indium gallium arsenide (InGaAs) single-photon avalanche photodiode is a single-photon detection device based on semiconductor materials, which can detect the energy of a single photon. It has been widely used in quantum communication, true random number generator, laser radar, optical time domain reflectometer and other fields. The working principle of the single-photon avalanche photodiode is: when a photon is absorbed in the diode absorption region, an initial electron-hole pair will be generated, and then under the action of an electric field, the electron or hole will be transported to the multiplication region to generate continuous amplification. As a result, macroscopic electrical signals can be observed. [0003] In terms of spectral response, usually InGaAs ...

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Problems solved by technology

However, after the In composition is increased, the lattice constant of the high-indium composition InGaAs material no longer matches the substrate, and such defects will increase the noise, so that the single-photon sensitivity cannot be achieved

On the other hand, due to the absorption of light waves below 900nm by the substrate, the photogenerated carriers will be recombined quickly in the substrate material, making it difficult to achieve effective charge collection, so it is difficult for devices with this structure to detect light below 900nm. photon

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