Chemical vapor deposition preparing method of large-size three-layer molybdenum sulfide single crystal

A chemical vapor deposition, molybdenum sulfide technology, applied in chemical instruments and methods, from chemical reactive gases, single crystal growth and other directions, can solve the problems of poor device performance, small size, poor quality, etc., to achieve convenient sample transfer, sample The effect of large size and regular sample morphology

Active Publication Date: 2019-08-27
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the three-layer molybdenum disulfide single crystal grown by chemical vapor deposition still has problems such as small size and poor quality, and the maximum can only be 10 μm (for example, references: Zobel A, Boson A, WilsonP M, et al .Chemical vapor deposition and characterization of uniform bilayer and trilayer MoS 2 crystals.Journal of Materials Chemistry C,2016,4(47):11081-11087.), so the device performance based on it is poor

Method used

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  • Chemical vapor deposition preparing method of large-size three-layer molybdenum sulfide single crystal
  • Chemical vapor deposition preparing method of large-size three-layer molybdenum sulfide single crystal
  • Chemical vapor deposition preparing method of large-size three-layer molybdenum sulfide single crystal

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Embodiment 1

[0040] Embodiment 1: This embodiment provides a chemical vapor deposition (CVD) preparation method of a large-scale three-layer molybdenum disulfide single crystal, and the schematic diagram of the device is as follows figure 1 shown, including the following steps:

[0041] 1. Clean the substrate: Clean the molybdenum foil and soda-lime glass sequentially with acetone, isopropanol, and deionized water for 10 minutes, and blow dry with nitrogen. Then the soda-lime glass substrate is put into the plasma cleaning machine for processing, and the parameters of the plasma cleaning machine are set as argon 40sccm, oxygen 10sccm, power is 11W, time 3.5min (the model of the plasma cleaning machine can be PLASMA CLEANER PDC -002-HP, the model of the plasma flowmeter can be PLASMAFLO PDC-FMG-2);

[0042] 2. Sample weighing: use a weighing balance to weigh the precursor. The quality of sulfur powder is 1.4g, is contained in corundum boat (certainly, also can adopt other can bear the loa...

Embodiment 2

[0061] This embodiment provides a chemical vapor deposition (CVD) preparation method of a large-scale three-layer molybdenum disulfide single crystal, and the schematic diagram of the device is as follows figure 1 shown, including the following steps:

[0062] 1. Clean the substrate: Clean the molybdenum foil and soda-lime glass sequentially with acetone, isopropanol, and deionized water for 10 minutes, and blow dry with nitrogen. Put the soda-lime glass substrate into the plasma cleaning machine for processing again, the parameters of the plasma cleaning machine are set as argon 50 sccm, oxygen 10 sccm, power is 9W, time 2.5min;

[0063] 2. Sample weighing: use a weighing balance to weigh the precursor. The mass of sulfur powder is 1g, packed in a corundum boat. The mass of molybdenum trioxide is 3 mg, which is placed on a quartz boat with a 90nm silicon dioxide / silicon substrate, and a ceramic sheet is placed on it to prevent poisoning by sulfur vapor. Place another piece...

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Abstract

The invention belongs to the field of two-dimensional material preparation, and discloses a chemical vapor deposition preparing method of a large-size three-layer molybdenum sulfide single crystal. The method is characterized by including the following steps of S1, preparing clean and dry molybdenum foil and soda-lime glass, and weighing elemental sulfur and molybdenum trioxide as precursors; S2,putting a first carrying boat with molybdenum foil, soda-lime glass and molybdenum trioxide and a second carrying boat with elemental sulfur into a chemical vapor deposition (CVD) pipe; S3, conductingdual-temperature-area temperature control CVD on the CVD pipe so that the three-layer molybdenum sulfide single crystal can deposit on the soda-lime glass. By improving the substrate material and thedual-temperature-area temperature arrangement of the key CVD process in the preparing method, compared with the prior art, the novel method for preparing the large-size three-layer molybdenum sulfidesingle crystal is provided, the maximum internal length of the obtained large-size three-layer molybdenum sulfide single crystal can reach 90 micron, and the prepared three-layer molybdenum sulfide single crystal is high in quality.

Description

technical field [0001] The invention belongs to the field of two-dimensional material preparation, and more specifically, relates to a chemical vapor deposition preparation method of a large-scale three-layer molybdenum sulfide single crystal, through which the chemical vapor deposition (CVD) method can especially prepare a large-scale three-layer molybdenum disulfide Molybdenum single crystal. Background technique [0002] In recent years, two-dimensional materials such as graphene, transition metal sulfides, and black phosphorus have attracted extensive attention due to their unique structures and outstanding properties. As a member of the transition metal sulfide family, molybdenum disulfide has an adjustable band gap of 1.2-1.9eV, and has broad application prospects in logic devices, integrated circuits, and optoelectronics. Molybdenum disulfide is a layered material. Each layer of molybdenum disulfide is covalently bonded by two layers of sulfur atoms embedded in a lay...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/46C30B25/00
CPCC30B25/00C30B29/46
Inventor 李学飞徐晓乐吴燕庆
Owner HUAZHONG UNIV OF SCI & TECH
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