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Low-melting-point metal-water-based conductive composite slurry and preparation method thereof

A low melting point metal, composite slurry technology, applied in conductive materials dispersed in non-conductive inorganic materials, cable/conductor manufacturing, circuits, etc., can solve the volatilization damage of organic carriers, poor conductivity of composite slurry, rheological properties It can improve the comprehensive performance, reduce the sintering temperature, and make the preparation process simple.

Active Publication Date: 2019-08-30
扬州虹运电子材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a low-melting point metal-CNTS / Cu water-based conductive composite slurry, which solves the problem of poor electrical conductivity of the composite slurry in the prior art, poor sintering adhesion, poor rheological properties, excessive sintering temperature, and copper powder. Easy to oxidize and organic carrier volatilization damages environmental protection

Method used

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  • Low-melting-point metal-water-based conductive composite slurry and preparation method thereof
  • Low-melting-point metal-water-based conductive composite slurry and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] Step 1, first add the ionic surfactant sodium dodecylbenzene sulfonate into the deionized water at 5g / L, ultrasonically oscillate to dissolve it, then add carbon nanotubes to the solution at 2g / L, and ultrasonically oscillate for 4h , to obtain the treated carbon nanotube solution, and centrifuge at 6000r / min for 7 minutes in a centrifuge, and finally pour off the supernatant to obtain carbon nanotubes.

[0050] Step 2, prepare the copper sulfate solution that mass volume ratio is 10g / L at room temperature, add sodium citrate, potassium sodium tartrate and EDTA total 10g / L (by 1:1:1 adding) in this copper sulfate solution, stir Mix to obtain a gel-like mixture A; then add NaOH solution in the gel-like mixture A to adjust the pH to 10, and stir to obtain a main salt mixed solution; then add catalyst nickel sulfate 0.8g / L to the main salt mixed solution, and the reducing agent Formaldehyde 30g / L, stabilizer 2,2-bipyridine 0.02g / L, dispersant polyvinylpyrrolidone (PVP) 1g / ...

Embodiment 2

[0055] Step 1, first add the ionic surfactant sodium dodecylbenzene sulfonate into the deionized water at 8g / L, ultrasonically oscillate to dissolve it, then add carbon nanotubes to the solution at 4g / L, and ultrasonically oscillate for 4.5 h, the treated carbon nanotube solution was obtained, and then centrifuged by a centrifuge at a speed of 7000 r / min for 5 minutes, and finally the supernatant was poured off to obtain carbon nanotubes.

[0056] Step 2, prepare the copper sulfate solution that mass volume ratio is 12g / L at room temperature, add sodium citrate, potassium sodium tartrate and EDTA total 12g / L (by 1:1:1 adding) in this copper sulfate solution, stir Mix to obtain a gel-like mixture A; then add NaOH solution in the gel-like mixture A to adjust the pH to 11, and stir to obtain a main salt mixed solution; then add catalyst nickel sulfate 0.9g / L to the main salt mixed solution, and the reducing agent Formaldehyde 32g / L, stabilizer 2,2-bipyridine 0.03g / L, dispersant p...

Embodiment 3

[0061] Step 1, first add the ionic surfactant sodium dodecylbenzene sulfonate into the deionized water at 11g / L, ultrasonically oscillate to dissolve it, then add carbon nanotubes at 6g / L to the solution, and ultrasonically oscillate for 5h , to obtain the treated carbon nanotube solution, and centrifuge at 6500r / min for 6 minutes in a centrifuge, and finally pour off the supernatant to obtain carbon nanotubes.

[0062] Step 2, prepare the copper sulfate solution that mass volume ratio is 13g / L at room temperature, add sodium citrate, potassium sodium tartrate and EDTA total 13g / L (by 1:1:1 adding) in this copper sulfate solution, stir Mix to obtain a gel-like mixture A; then add NaOH solution to the gel-like mixture A to adjust the pH to 12, and stir to obtain a main salt mixed solution; then add catalyst nickel sulfate 1g / L to the main salt mixed solution, and reducer formaldehyde 33g / L, stabilizer 2,2-bipyridine 0.04g / L, dispersant polyvinylpyrrolidone (PVP) 1.3g / L;, use Na...

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Abstract

The invention discloses low-melting-point metal-CNTS / Cu water-based conductive composite slurry. The low-melting-point metal-CNTS / Cu water-based conductive composite slurry comprises the following components in percentage by mass: 50-80% of a mixed conductive phase, 5-15% of tin powder or bismuth powder, 15-30% of a water-based carrier, 0.1-0.5% of an additive P and 0.1-4.5% of an additive Ga, wherein the total amount is 100%. The present invention further discloses a preparation method of low-melting-point metal-CNTS / Cu water-based conductive composite slurry. In the product and the preparation method thereof, the mixed conductive phase is prepared by employing a chemical plating method, so that the combination of the copper and a carbon nano tube is more compact and uniform; the low-melting-point metal tin or bismuth is used as a new bonding phase, so that the sintering temperature can be reduced, and the comprehensive performance of the slurry is improved; and the water-based carrier is environment-friendly, so that the cost is obviously reduced.

Description

technical field [0001] The invention belongs to the technical field of composite electronic paste, and specifically relates to a low-melting-point metal-CNTS / Cu water-based conductive composite paste, and the invention also relates to a preparation method of the low-melting-point metal-CNTS / Cu water-based conductive composite paste . Background technique [0002] Electronic paste is the basic material for manufacturing electronic components. It is a paste uniformly mixed with solid powder and organic solvent. As a kind of thick film paste, it is an important part of electronic information materials. As a high-tech electronic functional material integrating metallurgy, chemical industry and electronic technology, it is widely used in thick film integrated circuits, electronic surface packaging, microelectronics Electronics industries such as technology, solar cells, printing and high-resolution electrical conductors. With the unprecedented popularization of electronic equip...

Claims

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Application Information

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IPC IPC(8): H01B1/22H01B1/24H01B13/00
CPCH01B1/22H01B1/24H01B13/00
Inventor 屈银虎梅超成小乐左文婧刘晓妮何炫张学硕周思君袁建才
Owner 扬州虹运电子材料有限公司
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