Perovskite photovoltaic cell with potassium hexafluorophosphate film as interface passivation layer

A technology of potassium hexafluorophosphate and photovoltaic cells, applied in the field of materials, can solve the problems of rising cost, insufficient annealing temperature, etc., and achieve the effects of reducing preparation cost, low cost and high transmittance

Pending Publication Date: 2019-08-30
WUHAN INSTITUTE OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These indicate that the annealing temperature of SnO2 quantum dot film at 200 °C is not enough
If the annealing temperature is increased, it wil

Method used

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  • Perovskite photovoltaic cell with potassium hexafluorophosphate film as interface passivation layer
  • Perovskite photovoltaic cell with potassium hexafluorophosphate film as interface passivation layer
  • Perovskite photovoltaic cell with potassium hexafluorophosphate film as interface passivation layer

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Embodiment 1

[0054] Such as figure 1 As shown, a planar perovskite photovoltaic cell includes a transparent conductive substrate 1, an electron transport layer 2, an interface passivation layer 3, a perovskite photosensitive active layer 4, a hole transport layer 5 and a metal electrode 6. The preparation method comprises the following steps:

[0055] (1) Treatment of transparent conductive substrate: cleaning FTO (fluorine-doped SnO 2 ) conductive glass sheet, first soak the conductive glass sheet in warm water filled with detergent (such as Libai brand liquid detergent) for 20 minutes, then rinse it with clean water after repeated scrubbing; then polish it with polishing powder; Then put them into containers containing deionized water, acetone and alcohol and sonicate them for 20 minutes respectively; finally put them into deionized water and rinse them twice, then dry them with a nitrogen gun and dry them in an oven at 80°C;

[0056] (2)SnO 2 Thin Film Fabrication: Fabrication of SnO...

Embodiment 2

[0067] Such as figure 1 As shown, a planar structure perovskite photovoltaic cell includes a transparent conductive substrate, an electron transport layer, an interface passivation layer, a perovskite photosensitive active layer, a hole transport layer and a metal electrode, and its preparation method includes the following steps:

[0068] (1) cleaning ITO conductive glass sheet: with embodiment 1;

[0069] (2)SnO 2 Thin Film Preparation: SnO Fabrication on ITO Substrates 2 film, and put it into a UV-ozone cleaner, and treat it with UV-ozone for 10 minutes in an atmospheric atmosphere and at room temperature, and the treated SnO 2 / ITO substrate is quickly transferred into the glove box;

[0070] (3) on SnO 2 Preparation of KPF on thin film 6 film;

[0071] a. Take 2.0mg of KPF 6 Particles were dissolved in 1 ml of ethyl acetate, completely dissolved before use;

[0072] b. Spin coating on SnO at a speed of 1000 rpm (15s) 2 QD film spin-coated KPF 6 solution to form...

Embodiment 3

[0078] Such as figure 1 As shown, a planar structure perovskite photovoltaic cell includes a transparent conductive substrate, an electron transport layer, an interface passivation layer, a perovskite photosensitive active layer, a hole transport layer and a metal electrode, and its preparation method includes the following steps:

[0079] (1) cleaning of the flexible transparent plastic substrate coated with ITO: with embodiment 1;

[0080] (2)SnO 2 Thin Film Fabrication: Fabrication of SnO on Flexible Transparent Plastic Substrates of ITO 2 QD thin film, and put it into the ultraviolet ozone cleaning instrument, treat with ultraviolet ozone at room temperature for 10 minutes in the atmosphere of the atmosphere;

[0081] (3) on SnO 2 Prepare KPF6 film on QD film;

[0082] a. Take 1mg of KPF 6 The granules were dissolved in 10 ml of ethyl acetate, completely dissolved before use;

[0083] b. Spin coating on SnO at a speed of 3000 rpm (15s) 2 Spin-coating KPF on QD fi...

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Abstract

The invention discloses a perovskite photovoltaic cell with a potassium hexafluorophosphate film as an interface passivation layer. The perovskite photovoltaic cell comprises a transparent conductivesubstrate, an electron transport layer, a perovskite photosensitive active layer, a hole transport layer and a metal electrode. An interface passivation layer is arranged between the electron transport layer and the perovskite photosensitive active layer; or an interface passivation layer is arranged between the perovskite photosensitive active layer and the hole transport layer; or interface passivation layers are arranged among the electron transport layer, the perovskite photosensitive active layer and the hole transport layer at the same time. The interface passivation layer is a potassiumhexafluorophosphate film. According to the invention, a KPF6 thin film is used as the interface passivation layer to passivate an adjacent interface of the perovskite photosensitive layer; potassiumion A-site substitution is utilized, so interface defects are reduced, and electron-hole recombination is restrained, charge transfer between interfaces is improved, and filling factors are increased;and he hydrophobicity of the fluorine group is utilized, so the hydrophobicity of a device is improved and the stability of the device is improved.

Description

technical field [0001] The invention belongs to the technical field of materials, and in particular relates to a perovskite photovoltaic cell. Background technique [0002] With the lack of energy in the world, solar energy, as an inexhaustible renewable clean energy, has received extensive attention. The perovskite photovoltaic cells that emerged at the historic moment have seen their highest efficiency increase from 3.81% in 2009 to the current 23.7% in just a few years (https: / / www.nrel.gov / pv / cell-efficiency.html ). The prospect is very good, and the value of commercial application is huge. [0003] Traditional planar perovskite photovoltaic cells use ZnO, TiO2, or SnO2 as the electron transport layer. However, ZnO is quite sensitive to weak acids and bases, and it is very easy to react with the photosensitive layer to cause degradation; TiO2 has low electron mobility and requires high-temperature sintering, and its catalytic activity makes perovskite photovoltaic cel...

Claims

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Application Information

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IPC IPC(8): H01L51/44H01L51/48
CPCH10K71/12H10K30/88Y02E10/549
Inventor 秦平力王正春吴彤余雪里马良熊伦陈相柏
Owner WUHAN INSTITUTE OF TECHNOLOGY
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