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Doped tungsten oxide target material and preparation method thereof

A technology of tungsten oxide and target material, which is applied in the field of target material and its preparation, can solve the problems of lack of electrochromic target material, different conductivity of target material, and influence on process stability, so as to improve the activity of raw materials, uniform composition, and improve The effect of conductivity

Active Publication Date: 2019-10-22
CHINA BUILDING MATERIALS ACAD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, metal is added to the oxide target prepared in the prior art, which causes phase separation of the target. In addition, the use of oxidized tungsten oxide can easily cause volatilization of tungsten oxide, which affects the density of the target and damages the production equipment. More importantly, Due to the large difference in the atmosphere inside and outside the target, and the volatilization of tungsten oxide, the conductivity between the inside and outside of the target is different, resulting in process fluctuations, which greatly affect the process stability.
In addition, there is also a lack of how to obtain an electrochromic target with uniform composition by controlling the particle size of the powder.

Method used

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  • Doped tungsten oxide target material and preparation method thereof
  • Doped tungsten oxide target material and preparation method thereof
  • Doped tungsten oxide target material and preparation method thereof

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preparation example Construction

[0036] An embodiment of the present invention proposes a method for preparing a doped tungsten oxide target, which includes:

[0037] Activate and grind tungsten oxide to obtain activated tungsten oxide, the tungsten oxide is WO 3-x , 0≤xy , y≤3-x;

[0038] Activating and pulverizing the doping oxide to obtain an activated doping oxide, the doping oxide being MO m , 0n , n≤m, wherein, M is one or more of titanium, nickel, tantalum, rhenium, iridium, molybdenum, niobium, silicon, tin, zinc, zirconium and germanium;

[0039] uniformly mixing the activated tungsten oxide and activated doping oxide, and pressing to obtain a green body;

[0040] Sintering the green body to obtain a doped tungsten oxide target;

[0041] Wherein, the relationship between the particle size ratio and the molar ratio of the activated tungsten oxide and the activated doped oxide is as follows:

[0042]

[0043] In the formula:

[0044] R w is the radius of activated tungsten oxide;

[0045] R ...

Embodiment 1

[0099] This embodiment proposes a method for preparing a doped tungsten oxide target, which includes:

[0100] Heat tungsten trioxide in a vacuum environment at 1100°C to activate it, grind it and sieve it to obtain activated tungsten oxide (WO 2.5 ) particles, particle size is 500nm;

[0101] Titanium oxide was heated at 1500°C and a vacuum of 200 Pa to activate it, ground and sieved to obtain activated titanium oxide (TiO 1.5 ) particles, particle size is 200nm;

[0102] The obtained activated tungsten oxide particles and activated titanium oxide particles were uniformly mixed with a molar ratio of 9:1, and pressed at 60Mpa for 5 minutes to obtain a green body;

[0103] The obtained body was sintered at 1100° C. and a vacuum of 10 Pa to obtain a titanium-doped tungsten oxide target.

Embodiment 2

[0105] This embodiment proposes a method for preparing a doped tungsten oxide target, which includes:

[0106] Tungsten oxide (WO 2.5 ) mixed with carbon powder, heated in an inert environment at 900°C to activate it, ground and sieved to obtain activated tungsten oxide (WO 2 ) particles, particle size is 500nm;

[0107] Mix tantalum oxide with carbon powder, heat in an inert environment at 1100°C to activate, grind and sieve to obtain activated tantalum oxide (TaO 2 ) particles, particle size is 150nm;

[0108] The obtained activated tungsten oxide particles and activated tantalum oxide particles were uniformly mixed with a molar ratio of 9.5:0.5, and pressed at 10 MPa for 5 minutes to obtain a green body;

[0109]The obtained green body was sintered in a reducing atmosphere at 1200°C, wherein the reducing atmosphere was a mixed gas of argon and hydrogen, and the ratio of argon to hydrogen was 8:2 to obtain a tantalum-doped tungsten oxide target.

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Abstract

The invention relates to a doped tungsten oxide target material and a preparation method thereof. The preparation method comprises the following steps: activating and grinding tungsten oxide to obtainactivated tungsten oxide; activating and grinding a doped oxide to obtain activated doped oxide, wherein the doped oxide is an oxide composed of one or more of titanium, nickel, tantalum, rhenium, iridium, molybdenum, niobium, silicon, tin, zinc, zirconium and germanium; uniformly mixing the activated tungsten oxide with the activated doped oxide, and pressing the obtained mixture to obtain a green body; and sintering the green body to obtain the doped tungsten oxide target material, wherein a relationship between the particle size ratio and the molar ratio of the activated tungsten oxide tothe activated doped oxide is shown in the description. The electrochromic doped tungsten oxide target material with a uniform composition and a high density is obtained by establishing the relationship between the particle size ratio and the molar ratio; and the doped tungsten oxide target material has a certain conductivity, and can be used in direct current or medium-frequency power supplies.

Description

technical field [0001] The invention relates to a target material and a preparation method thereof, in particular to a doped tungsten oxide target material and a preparation method thereof. Background technique [0002] When preparing the electrochromic film layer by magnetron sputtering, if a metal target is used, phase separation is likely to occur during the target preparation process, which affects the uniformity of the coating; due to the use of reactive sputtering, the coating rate is slow, and due to a large number of channels Oxygen poisons the target surface, produces abnormal arcs and dust, and seriously affects the quality of the film and the qualified rate of the device. Ceramic targets using metal oxides only need a small amount of oxygen, which is not easy to cause dust, and the sputtering rate can be increased by 5-10 times compared with metal targets, but the ceramic target must meet: the target has certain conductivity, It can use DC, intermediate frequency...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/495C04B35/622
CPCC04B35/495C04B35/622C04B2235/3232C04B2235/3251C04B2235/3279
Inventor 孟政余刚代强汪洪
Owner CHINA BUILDING MATERIALS ACAD
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