Preparation method and film of flexible electrochromic patterned film based on liquid film rupture self-assembly

Abstract

The invention discloses a method for preparing a flexible electrochromic patterned film based on liquid film rupture self-assembly and the film. The method includes the step of preparing a conductive layer and / or an electrochromic layer, including the following sub-steps: preparing a specific material suspension, The specific material is the material of the conductive layer or the electrochromic layer; adding the suspension of the specific material into deionized water with a surfactant; inserting the substrate with a patterned structure into the deionized water, and The water-air surface is pulled out, so that a mixed film of a specific material and water is attached to the surface of the substrate; the water evaporation of the mixed film causes the mixed film to rupture. The invention adopts the self-assembly method of liquid film rupture to realize thin film preparation, greatly improves the light transmittance of the conductive thin film while ensuring electrical conductivity, can realize specific patterns to emit light after electrification, and realizes the patterning of electroluminescent devices. And this method can be used to prepare the conductive layer and / or the electrochromic layer respectively.

Description

technical field [0001] The invention relates to the field of preparation of functional devices, in particular to a preparation method of a flexible electrochromic patterned thin film based on liquid film rupture self-assembly and the thin film. Background technique [0002] An electrochromic device refers to a device that can change color cyclically through a certain voltage or current by combining electrochromic materials with other related materials. The structure of an electrochromic device may generally include a substrate / transparent conductive layer / ion storage layer / electrolyte layer / electrochromic layer. Indium tin oxide is a relatively mature electrode conductive material used at this stage, but indium is a rare metal with limited reserves in the earth, and the price of indium tin oxide is very expensive; the preparation method of indium tin oxide conductive film usually adopts physical vapor deposition or The sputtering deposition method is deposited on the surfac...

AI Technical Summary

Problems solved by technology

Metal nanowires have entered the public's field of vision due to their good flexibility. Among many metal nanowires, copper nanowires have the disadvantages of easy oxidation, poor electrical conductivity, and short service life; gold nanowires are relatively expensive; silver nanowires Because of its high conductivity, good flexibility, high transmittance, simple preparation method, and low preparation cost, it is favored by researchers.

For example, the Chinese invention patent application with the publication number CN107610817A discloses a layer-by-layer self-assembled flexible conductive film of silver nanowires, but the formed film is a planar random film with limited uniformity, and the pattern of the electrochromic layer cannot be realized. change

[0005] The following prior art discloses the use of silver nanowires to realize patterned films: (1) the Chinese invention patent application whose publication number is CN107765511A discloses a patterning method for a composite transparent conductive film of graphene and silver nanowires. The conductive film covered with silver nanowires is etched again, but the nanomaterials in the part removed in this application are wasteful, which increases production costs; (2) the Chinese invention patent application with publication number CN107093500A discloses A method for patterning flexible transparent conductive films of silver nanowires, which uses protection to form patterned conductive films, but there are also removed nanomaterials in this application; (3) Chinese invention patent with publication number CN105575789A The application discloses a thin film patterning method. Firstly, the photoresist is processed to obtain patterned photoresist with different heights, and then nanomaterials are coated on it, and the higher part of the photoresist is removed by grinding. Nanomaterials, which are also nanomaterials from which excess parts have been removed, without redistribution of nanomaterials

[0006] In addition, in the above three comparison documents, photolithography and etching technology are used to realize the realization. However, photolithography and etching technology have high requirements on equipment. Every time a patterned film is prepared, etching / photolithography is required, and the cost is bound to be very high. High, although graphical, but not suitable for mass production

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