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A kind of high thermal conductivity silicon nitride ceramics and preparation method thereof

A technology of silicon nitride ceramics and high thermal conductivity, which is applied in the field of ceramic material preparation and can solve the problem of low thermal conductivity of silicon nitride ceramics

Active Publication Date: 2021-09-07
FUJIAN HUAQING ELECTRONICS MATERIAL TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Therefore, in view of the above content, the present invention provides a silicon nitride ceramic with high thermal conductivity and a preparation method thereof to solve the problem of low thermal conductivity of silicon nitride ceramics in the prior art

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  • A kind of high thermal conductivity silicon nitride ceramics and preparation method thereof

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Embodiment 1

[0021] A silicon nitride ceramic with high thermal conductivity. In parts by weight, the silicon nitride ceramic is made of the following raw material components: 60 parts of silicon nitride, 8 parts of silicon carbide, 2 parts of yttrium chloride, lanthanum chloride 1 part, 0.2 parts of ytterbium fluoride, 0.5 parts of zirconium nitride, and 5 parts of polyisobutenyl succinimide.

[0022] The preparation method of silicon nitride ceramics with high thermal conductivity comprises the following steps:

[0023] Step 1: Weigh 60 parts of silicon nitride, 8 parts of silicon carbide, 2 parts of yttrium chloride, 1 part of lanthanum chloride, 0.2 parts of ytterbium fluoride, 0.5 parts of zirconium nitride, polyisobutenyl butanedi 5 parts of imides are mixed to obtain mixed raw materials;

[0024] Step 2: Add the mixed raw material obtained in step 1 and 45 parts of isopropanol into a ball mill for the first grinding and pulverization, after grinding and pulverizing for 15 hours, dr...

Embodiment 2

[0028] A silicon nitride ceramic with high thermal conductivity. In parts by weight, the silicon nitride ceramic is made of the following raw material components: 75 parts of silicon nitride, 10 parts of silicon carbide, 3 parts of gadolinium chloride, terbium chloride 1 part, 0.6 parts of ytterbium fluoride, 1 part of zirconium nitride, and 8 parts of polyethylene oxide.

[0029] The preparation method of silicon nitride ceramics with high thermal conductivity comprises the following steps:

[0030] Step 1: Weigh 75 parts of silicon nitride, 10 parts of silicon carbide, 3 parts of gadolinium chloride, 1 part of terbium chloride, 0.6 parts of ytterbium fluoride, 1 part of zirconium nitride, and 8 parts of polyethylene oxide in parts by weight mixing to obtain mixed raw materials;

[0031] Step 2: Add the mixed raw material obtained in step 1 and 52 parts of isopropanol into a ball mill for the first grinding and pulverization, after grinding and pulverizing for 16 hours, dry ...

Embodiment 3

[0035]A silicon nitride ceramic with high thermal conductivity. In parts by weight, the silicon nitride ceramic is made of the following raw material components: 90 parts of silicon nitride, 12 parts of silicon carbide, 3 parts of ytterbium chloride, lutetium chloride 2 parts, 1 part of ytterbium fluoride, 2 parts of zirconium nitride, 10 parts of polyethylene wax.

[0036] The preparation method of silicon nitride ceramics with high thermal conductivity comprises the following steps:

[0037] Step 1: Weigh 90 parts of silicon nitride, 12 parts of silicon carbide, 3 parts of ytterbium chloride, 2 parts of lutetium chloride, 1 part of ytterbium fluoride, 2 parts of zirconium nitride, and 10 parts of polyethylene wax in parts by weight mixing to obtain mixed raw materials;

[0038] Step 2: Add the mixed raw material obtained in step 1 and 60 parts of isopropanol into a ball mill for the first grinding and crushing, after grinding and pulverizing for 18 hours, dry the mixed raw ...

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Abstract

The invention relates to the technical field of ceramic material preparation, and provides a silicon nitride ceramic with high thermal conductivity and a preparation method thereof, which solves the problem of low thermal conductivity of the silicon nitride ceramic in the prior art. The silicon nitride ceramics include: 60-90 parts of silicon nitride, 8-12 parts of silicon carbide, 3-5 parts of rare earth chloride, 0.2-1 part of ytterbium fluoride, 0.5-2 parts of zirconium nitride, 5 parts of dispersant ~10 servings. The addition of rare earth chloride in the present invention improves the sintering activity of silicon nitride powder without introducing additional oxygen, and realizes the densification of silicon nitride ceramics; ytterbium fluoride can promote the diffusion of Si and N, and is compatible with nitride Oxygen impurities in the silicon lattice react, thereby effectively reducing the dissolved oxygen content of the silicon nitride lattice and improving the thermal conductivity of silicon nitride; zirconium ions in zirconium nitride have a strong affinity for oxygen and can absorb part of the lattice Oxygen impurities in it. The combination of rare earth chloride, ytterbium fluoride and zirconium nitride can also increase the grain size of silicon nitride and discharge oxygen impurities.

Description

technical field [0001] The invention relates to the technical field of ceramic material preparation, in particular to a silicon nitride ceramic with high thermal conductivity and a preparation method thereof. Background technique [0002] As a structural material that has been studied for a long time, silicon nitride ceramics have excellent properties such as high strength, high toughness, corrosion resistance, high temperature resistance, oxidation resistance, low specific gravity and thermal shock resistance, and are widely used in machinery, chemical industry, marine engineering, armor Defense and aerospace and other important fields. In the past, it was generally believed that silicon nitride ceramics did not have high thermal conductivity, and the thermal conductivity of silicon nitride bearing balls, structural parts, etc. was generally only 15-30W m -1 ·K -1 . Until 1995, Haggerty found that the thermal conductivity of silicon nitride crystals can be as high as 320...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/584C04B35/622C04B35/64
CPCC04B35/584C04B35/622C04B35/64C04B2235/3826C04B2235/3886C04B2235/444C04B2235/667
Inventor 杨大胜施纯锡
Owner FUJIAN HUAQING ELECTRONICS MATERIAL TECH
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