A kind of cubic aluminum nitride thin film and its preparation method and application

Abstract

The invention belongs to the field of ceramic materials, and discloses a cubic aluminum nitride film, a preparation method and application thereof. The method uses aluminum chloride hydrate and urea as raw materials, respectively dissolves aluminum chloride and urea in an alcohol solvent, heats and dissolves them at a certain temperature, and then slowly adds the urea solution into the aluminum chloride solution to obtain a clear and stable Precursor salt solution, so that the concentration of the solution is the maximum concentration at this room temperature, and the obtained precursor salt solution is coated on the single crystal substrate by spin coating method, under the protection of nitrogen atmosphere, use an aluminum nitride crucible at 1000 ° C. calcining, heat preservation, and finally an aluminum nitride film epitaxially grown on the substrate is obtained. The preparation process of the method is simple, the production cost is low, the properties of the precursor salt solution and the heat treatment process of the precursor film can be precisely controlled, and the epitaxial growth of the film can be effectively controlled, thereby preparing a film with excellent performance.

Description

technical field [0001] The invention belongs to the field of ceramic materials, and in particular relates to a cubic aluminum nitride film and its preparation method and application. Background technique [0002] AlN (aluminum nitride) has potential development and application value in both structural ceramics and functional ceramics. The theoretical thermal conductivity of AlN can reach 320W / m·K, and it has a small thermal expansion coefficient. It is an important ceramic substrate material and heat dissipation filler. AlN has the widest direct bandgap (6.2eV) among group III nitrides, so it has great application prospects in deep ultraviolet optical devices and photoluminescent host materials. AlN has little or even negative electron affinity, and its application in field emission devices is gradually increasing. AlN has a strong ability to resist molten metal erosion, and is an ideal crucible material for melting and casting pure iron, aluminum or aluminum alloy. In ad...

AI Technical Summary

Problems solved by technology

Most of the existing methods such as: Metal Organic Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE), Pulsed Laser Deposition (PLD) and Magnetron Reactive Sputtering Physical Deposition, although AlN films with good properties can be prepared, However, the experiment has strict requirements on the process, the controllability of the process parameters is difficult to meet the performance requirements, and the low-temperature deposition equipment is expensive and other shortcomings hinder the large-scale and low-cost preparation of AlN thin films.

Images