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Selective deposition on silicon containing surfaces

A selective, film deposition technology, applied in the field of selective deposition, which can solve problems such as insufficient process selectivity

Active Publication Date: 2019-12-24
VERSUM MATERIALS US LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Often, the selectivity of the process is insufficient due to incomplete passivation of the surface and / or due to physisorption of ALD precursor molecules and subsequent formation of ALD film material within the passivation layer itself or on surfaces where deposition is not desired

Method used

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  • Selective deposition on silicon containing surfaces
  • Selective deposition on silicon containing surfaces
  • Selective deposition on silicon containing surfaces

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0150] Example 1 : Increased Surface Hydroxyl Concentration with SC-1 Wet Chemical Exposure

[0151] Simultaneous processing of SiO by the following series of steps 2 and Si(100) independent samples:

[0152] Both substrate surfaces were first cleaned in a freshly prepared solution containing hydrogen peroxide (28-30%), ammonium hydroxide (28%) and distilled deionized water in a ratio of 200ml:100ml:1000ml. Including first mixing the chemicals together in a quartz beaker, heating the solution in the beaker to 70°C + / - 5°C, fully immersing the substrate surface in the preheated cleaning solution for 10 minutes, removing the substrate from the cleaning solution , and immerse them in a container of fresh distilled deionized water and rinse the substrate until the cleaning solution concentration on the substrate is diluted below the detection limit.

[0153] The effectiveness and completeness of the cleaning step can be measured using contact angle measurements (goniometer mea...

Embodiment 2

[0163] Example 2 : The Si-OH bond on the Si(100) surface is transformed into a Si-H bond

[0164] The fully hydroxylated SiO provided by the previous example was then simultaneously treated with a HF solution at a concentration of 2.0-3.0% (0.1%-5.0%) 2and the Si(100) surface for sufficient time to produce a fully hydrophobic surface on the Si(100), then rinsed in water and blown dry using a stream of ultra-high purity nitrogen. Typically, the formation of a Si(100)-H terminated surface takes 80-110 seconds (range: 20-600 seconds) at room temperature. Characterization of SiO using contact angle measurements 2 and Si(100) surfaces. Generally, it is believed that SiO 2 The lower the contact angle on the surface and the closer to 90° the contact angle on the Si(100)-H surface, the better the result of the HF etching step for the purposes of the present invention. Typical values ​​measured after the HF etching step for both substrate surfaces include:

[0165] SiO 2 : 4-8°...

Embodiment 3

[0173] Example 3 : wet cleaning followed by heat treatment

[0174] The purpose of thermal pretreatment is to minimize the surface hydroxyl concentration, ideally leaving only isolated hydroxyl groups that are subsequently passivated using one of the organosilane precursors using a gas phase process. In order to achieve a maximum reduction in surface hydroxyl concentration using heat treatment, it is first necessary to produce a fully hydroxylated surface (using wet cleaning, vapor phase exposure, plasma treatment, etc.). That is, it is necessary to first increase the surface hydroxyl concentration above that typically observed for as-received or as-treated silica surfaces prior to heat treatment in order to achieve the surface hydroxyl termination of the present invention.

[0175] The mechanism for the heat-treated reduction of surface hydroxyl groups is a silanol condensation reaction, which eliminates water, according to the formula:

[0176] Si(OH)(surface)+Si(OH)(surf...

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Abstract

A method is disclosed for delectively depositing a material on a substrate, wherein the substrate has at least two different surfaces wherein one surface is passivated thereby allowing selective deposition on the non-passivated surface. In particular, disclosed is a method for preparing a surface of a substrate for selective film deposition, wherein the surface of the substrate comprises at leasta first surface comprising SiO2 and an initial concentration of surface hydroxyl groups and a second surface comprising SiH, the method comprising the steps of: contacting the substrate with a wet chemical composition to obtain a treated substrate comprising an increased concentration of surface hydroxyl groups relative to the initial concentration of surface hydroxyl groups; and heating the treated substrate to a temperature of from about 200 DEG C to about 600 DEG C, wherein the heating step converts at least a portion of the surface hydroxyl groups on the first surface to surface siloxane groups on the surface of the substrate.

Description

[0001] Cross References to Related Applications [0002] This application claims priority under 35 U.S.C. §119(e) to U.S. Provisional Patent Application No. 62 / 472,724, filed March 17, 2017, which is incorporated herein by reference in its entirety. Background technique [0003] The present application relates to selective deposition on a first surface of a substrate relative to a second surface. Additionally, further processing may be used to subsequently deposit a different material on the second surface relative to the first surface. [0004] Selective deposition processes are gaining a lot of momentum primarily due to the limitations of contemporary lithographic processes to enable the fabrication of advanced semiconductor devices based on ever-decreasing physical dimensions. Traditionally, patterning has been achieved in the microelectronics industry using various photolithography and etching processes. However, since lithography is becoming exponentially more complex ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455C23C16/04
CPCC23C16/0218C23C16/0227C23C16/0272C23C16/04C23C16/06C23C16/40H01L21/02271H01L21/02057H01L21/02274H01L21/0228H01L21/02304H01L21/02307H01L21/02312H01L21/306H01L21/3105H01L21/32C23C16/45525C23C16/45553C23C16/45527H01L21/28562
Inventor M·A·托德
Owner VERSUM MATERIALS US LLC